本文選題：多孔硅含能材料　切入點(diǎn)：多孔硅含能芯片　出處：《南京理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：多孔硅內(nèi)嵌氧化劑后形成一類新型納米結(jié)構(gòu)含能材料。由于其制備工藝與MEMS工藝兼容,適合作為含能芯片的含能材料。目前這種納米結(jié)構(gòu)的含能材料已經(jīng)開(kāi)始應(yīng)用于點(diǎn)火裝置,但是應(yīng)用的基礎(chǔ)研究仍然十分薄弱,能量控制和釋放規(guī)律的認(rèn)識(shí)還比較淺顯。本文針對(duì)多孔硅納米結(jié)構(gòu)含能材料在微推進(jìn)方面的應(yīng)用,開(kāi)展了材料制備、芯片封裝和輸出特性及規(guī)律的研究,初步掌握了多孔硅含能材料的能量控制和釋放規(guī)律。主要的研究成果如下：采用電化學(xué)腐蝕技術(shù)制備了多孔硅薄膜。通電時(shí)間和電流強(qiáng)度的提高均會(huì)導(dǎo)致膜厚度的增大。當(dāng)電流強(qiáng)度0.1A、通電時(shí)間15mmin時(shí)制得的多孔硅薄膜表面平整,平均粗糙度僅為2.7nm,而厚度則達(dá)到25μm,可作為實(shí)驗(yàn)中制備多孔硅薄膜的最佳條件。采用MEMS工藝在多孔硅薄膜基礎(chǔ)上制備了多孔硅納米含能材料。通過(guò)X射線衍射分析發(fā)現(xiàn),填充的高氯酸鈉是以一水合高氯酸鈉的形式存在于孔隙中,同時(shí)也證實(shí)孔隙表面有Si-O-H的存在,說(shuō)明多孔硅表面有被氧化的跡象。熱分析實(shí)驗(yàn)表明高氯酸鈉在熔融后與多孔硅發(fā)生反應(yīng),放熱量達(dá)到689.5J.g"1。使用高速攝影記錄芯片的電點(diǎn)火過(guò)程,反應(yīng)持續(xù)時(shí)間可以達(dá)到毫秒級(jí)。采用光纖探測(cè)法研究芯片的延遲時(shí)間,發(fā)現(xiàn)電點(diǎn)火情況下芯片的延遲時(shí)間在微秒級(jí)。這表明多孔硅具有良好的發(fā)火可靠性,同時(shí)還具有較長(zhǎng)的作用時(shí)間。為了研究芯片的輸出壓力,設(shè)計(jì)制作了微型密閉爆發(fā)器。實(shí)驗(yàn)發(fā)現(xiàn)輸出壓力隨著點(diǎn)火電壓的增大而增大。在點(diǎn)火電壓為80V時(shí)僅有0.22MPa的輸出壓力,當(dāng)電壓達(dá)到200V時(shí)輸出壓力升高到17.99MPa。使用扭擺沖量測(cè)試裝置研究芯片在不同點(diǎn)火電壓下的反應(yīng)沖量。結(jié)果表明,多孔硅含能芯片的沖量一般在微牛秒級(jí),表明多孔硅含能芯片有望用于微推進(jìn)領(lǐng)域中。為研究多孔硅含能芯片在約束條件下的反應(yīng)性能,設(shè)計(jì)了直孔和收斂-擴(kuò)張孔兩種噴孔結(jié)構(gòu)。實(shí)驗(yàn)發(fā)現(xiàn),低點(diǎn)火電壓時(shí),兩種封裝結(jié)構(gòu)對(duì)沖量的提升都不明顯,但是在高電壓下,收斂-擴(kuò)張噴孔能夠大幅提高反應(yīng)沖量,在200V時(shí)達(dá)到了近2mN-s,遠(yuǎn)遠(yuǎn)高于直孔時(shí)的914.52μN(yùn)·s和無(wú)噴孔時(shí)的728.42μN(yùn)-s。
[Abstract]:A new type of nano-structure energetic material is formed by intercalation of oxidant in porous silicon. Because its preparation process is compatible with MEMS process, it is suitable for the energetic material of energetic chip. At present, this kind of nano-structure energetic material has been used in igniting device. However, the basic research of application is still very weak, and the understanding of energy control and release law is still relatively simple. In this paper, the preparation of porous silicon nanostructured energetic materials in micro-propulsion has been carried out. Research on the characteristics and laws of Chip Packaging and output, The main research results are as follows: the porous silicon thin films were prepared by electrochemical corrosion technique. The increase of electrification time and current intensity will lead to the thickness of porous silicon films. When the current intensity is 0.1A and the electric time is 15mmin, the surface of the porous silicon film is flat, The average roughness is only 2.7 nm and the thickness is 25 渭 m, which can be used as the best condition for the preparation of porous silicon thin films. The porous silicon nano-energetic materials were prepared on the basis of porous silicon films by MEMS process. The filled sodium perchlorate exists in the pore in the form of sodium perchlorate monohydrate, and Si-O-H exists on the pore surface. Thermal analysis shows that sodium perchlorate reacts with porous silicon after melting, and the heat release reaches 689.5 J. g "1.The electric ignition process of the chip is recorded by high-speed photography. The reaction duration can reach millisecond order. The delay time of the chip is found to be in the order of microsecond in the case of electric ignition by using optical fiber detection method, which shows that porous silicon has good firing reliability. In order to study the output pressure of the chip, a miniature closed burst was designed and manufactured. It was found that the output pressure increased with the increase of the ignition voltage, and the output pressure was only 0.22 MPA when the ignition voltage was 80 V. When the voltage reaches 200 V, the output pressure rises to 17.99 MPA. The reaction impulse of the chip under different ignition voltages is studied by using a torsion pendulum test device. The results show that the impulse of the porous silicon energy-containing chip is generally in the order of microcow second. In order to study the reaction performance of the porous silicon energetic chip under the constraint conditions, two kinds of orifice structures, straight hole and convergent expansion hole, are designed. It is found that at low ignition voltage, the porous silicon energetic chip is expected to be used in the field of micropropulsion. However, at high voltage, convergent and expanded holes can greatly increase the reaction impulse, reaching nearly 2mN-s at 200V, which is much higher than that of 914.52 渭 N 路s for straight holes and 728.42 渭 N-s for non-perforated ones.
【學(xué)位授予單位】：南京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ560;TB383.2

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