本文選題：六方氮化硼　切入點(diǎn)：石墨烯　出處：《華中科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：自2004年石墨烯被成功分離之后,一系列其它二維晶體材料神秘的面紗被慢慢地揭開(kāi),其中六方氮化硼(h-BN)是一種晶格結(jié)構(gòu)、物理性質(zhì)和石墨烯既相似又互補(bǔ)的二維層狀晶體材料。如今已有很多科學(xué)家通過(guò)探索制備出石墨烯—氮化硼異質(zhì)結(jié)等材料結(jié)構(gòu)來(lái)研究其在微電子器件上的應(yīng)用前景。本文主要通過(guò)h-BN表面納米溝槽的刻蝕和氣泡制備來(lái)研究六方氮化硼表面微納結(jié)構(gòu)的制備與表征。在h-BN表面刻蝕部分,研究了六方氮化硼表面納米槽的刻蝕工藝及影響因素。首先,通過(guò)采用納米顆粒作為刻蝕催化劑,在h-BN表面獲得各向異性良好的直線型h-BN表面納米溝槽,并將其設(shè)定為標(biāo)準(zhǔn)常規(guī)工藝,在此基礎(chǔ)上分別在還原性刻蝕氣氛和氧化性刻蝕氛圍下,實(shí)現(xiàn)h-BN表面納米溝槽的長(zhǎng)度、深度、寬度和密度的可控刻蝕。探索了六方氮化硼表面納米溝槽刻蝕的各種影響因素,研究了h-BN表面線刻蝕各向異性隨氣體壓強(qiáng)以及刻蝕氣氛濃度的改變所產(chǎn)生的相應(yīng)變化規(guī)律。在氣泡研究部分,利用化學(xué)氣相沉積的管式爐在等離子體射頻電源的輔助下實(shí)現(xiàn)了在h-BN表面制備微納氣泡結(jié)構(gòu)的設(shè)想,并找到了影響氣泡大小的實(shí)驗(yàn)參數(shù)以及變化規(guī)律。最后,借助可變溫控制的樣品臺(tái)、光學(xué)顯微鏡、原子力顯微鏡以及拉曼光譜儀對(duì)六方氮化硼表面的微納氣泡結(jié)構(gòu)隨溫度變化的圖像以及晶格振動(dòng)的頻率進(jìn)行表征,研究h-BN表面氣泡隨溫度變化的規(guī)律。
[Abstract]:Since the successful separation of graphene in 2004, the mysterious veil of a series of other two-dimensional crystal materials has been slowly lifted, in which hexagonal boron nitride (h-BN) is a lattice structure. A two-dimensional layered crystal material with physical properties similar to and complementary to graphene. Nowadays, many scientists have explored the structure of graphene-boron nitride heterojunction to study its application in microelectronic devices. In this paper, we study the preparation and characterization of hexagonal boron nitride surface microstructures by etching nano-grooves on h-BN surface and bubble preparation. The etching process of hexagonal boron nitride surface nanogrooves and its influencing factors were studied. Firstly, the anisotropic nanogrooves on h-BN surface were obtained by using nano-particles as the etching catalyst. On the basis of this, the length and depth of nano-grooves on h-BN surface can be realized by reducing etching atmosphere and oxidizing etching atmosphere, respectively. Controlled etching of width and density. Various factors affecting the etching of nano-grooves on the surface of hexagonal boron nitride have been explored. The variation of the anisotropy of h-BN surface with the change of gas pressure and the concentration of etching atmosphere is studied. Using the tube furnace of chemical vapor deposition with the assistance of plasma radio frequency power source, the assumption of fabricating micro and nano bubble structure on h-BN surface is realized, and the experimental parameters affecting the bubble size and the variation law are found. With the help of a sample table controlled by variable temperature, an optical microscope, an atomic force microscope and a Raman spectrometer, the image and the frequency of lattice vibration of the micro-nano bubble structure on the surface of hexagonal boron nitride are characterized. The change of bubble temperature on h-BN surface was studied.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ128;TB383.1

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本文編號(hào)：1574060