本文選題：硅金字塔　切入點：氧化鋅納米線　出處：《物理學(xué)報》2017年09期 　論文類型：期刊論文

【摘要】：光伏器件粉塵堆積伴隨的遮光效應(yīng)極其嚴(yán)重,可導(dǎo)致太陽能電池的光電轉(zhuǎn)換效率降低一半以上,這是任何其他提高光伏器件性能的高新技術(shù)所不能彌補的.本文根據(jù)Cassie-Baxter理論構(gòu)建出一種基于光伏器件應(yīng)用的超疏水自清潔微納復(fù)合結(jié)構(gòu),即氧化鋅納米線耦合硅金字塔.通過調(diào)控硅金字塔的尺寸和均勻性,使其尺寸效應(yīng)不被遮蓋以符合存在微米構(gòu)型的疏水要求,同時盡量不破壞硅光伏器件絨面的減反性能.本文采用水熱法在金字塔表面生長氧化鋅納米線的方案,通過系統(tǒng)的實驗設(shè)計,首次成功地制備了符合光伏器件應(yīng)用的接觸角高達(dá)154?,且接觸角滯后小于10?的超疏水自清潔微納復(fù)合結(jié)構(gòu).此外,我們不僅發(fā)現(xiàn)硅金字塔的刻蝕存在"高溫促進(jìn)硅金字塔刻蝕"的溫度效應(yīng)和硅金字塔頂部有"圓潤-方正-圓潤"的時間效應(yīng),還從物理上對高溫促進(jìn)刻蝕、晶體的各向異性刻蝕導(dǎo)致的硅金字塔和我們所制備的氧化鋅納米線耦合硅金字塔復(fù)合結(jié)構(gòu)的陷光效應(yīng)等進(jìn)行了比較充分的分析.
[Abstract]:The photovoltaic device dust accumulation is accompanied by the extremely serious shading effect, which can reduce the photovoltaic conversion efficiency of solar cells by more than half. In this paper, based on the Cassie-Baxter theory, a super-hydrophobic self-cleaning micro-nano composite structure based on photovoltaic device application is constructed, which can not be compensated by any other new technology that can improve the performance of photovoltaic devices. That is, zinc oxide nanowires are coupled to silicon pyramids. By controlling the size and uniformity of silicon pyramids, the size effect is not covered to meet the hydrophobic requirements of micron configurations. At the same time, the anti-reflection performance of silicon photovoltaic devices is not destroyed. In this paper, zinc oxide nanowires are grown on the pyramidal surface by hydrothermal method. For the first time, the contact angle of photovoltaic devices is as high as 154? And the contact angle lag is less than 10? In addition, we not only found that there is a temperature effect of "high temperature promoting silicon pyramid etching" and the time effect of "round square square regular round" on the top of silicon pyramid is not only found in the etching of silicon pyramid, but also in the structure of superhydrophobic self-cleaning micro-nano composite structure. The effect of the silicon pyramid induced by the high temperature etching, the anisotropic etching of the crystal and the ZnO nanowire coupled silicon pyramid composite structure prepared by us are also analyzed.
【作者單位】： 天津工業(yè)大學(xué)理學(xué)院;中國科學(xué)技術(shù)大學(xué)物理學(xué)院;
【基金】：國家自然科學(xué)基金(批準(zhǔn)號:11504264)資助的課題~~
【分類號】：TB383.1;TM914.4

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