本文關(guān)鍵詞： 電子封裝 納米材料 互連 散熱　出處：《上海大學(xué)》2015年博士論文　論文類型：學(xué)位論文

【摘要】：電子封裝可以為脆弱的芯片提供有效的保護(hù)并提供導(dǎo)電導(dǎo)熱通路,因此是電子產(chǎn)品中一個(gè)重要的組成部分。電子封裝所用的材料和結(jié)構(gòu)對(duì)日后電子產(chǎn)品的成本、尺寸和性能有著巨大的影響。近些年,電子產(chǎn)品的小型化與多功能化發(fā)展趨勢(shì)明顯。這一趨勢(shì)極大地增加了電子產(chǎn)品的封裝密度與功率,對(duì)封裝的材料與結(jié)構(gòu)提出了更高的要求。因此,電子封裝新材料與新結(jié)構(gòu)的開發(fā)工作的開展迫在眉睫�；谏鲜銮闆r,本論文嘗試了使用納米材料來解決高密度電子封裝中的互連與散熱問題。在互連方面,使用熱化學(xué)氣相沉積(TCVD)方法生長的豎直排列的納米碳管(VACNT)被用作了硅通孔的填充材料。與此同時(shí),使用等離子體增強(qiáng)化學(xué)氣相沉積方法(PECVD)制備的豎直排列的納米碳纖維(VACNF)即被用作了芯片凸點(diǎn)材料,也被用作了焊點(diǎn)的強(qiáng)化材料。由于碳基材料良好的穩(wěn)定性,許多在傳統(tǒng)互連材料中容易出現(xiàn)的問題,例如電遷移和晶粒粗化,可以得到明顯的改觀。除了使用碳基材料,合金及半導(dǎo)體納米材料也被應(yīng)用在了互連材料之中。研究表明,分布在焊點(diǎn)中的納米顆�？梢杂行У尼斣诲e(cuò)并限制裂紋的生長。因此,在本論文中,Sn-3.0Ag-0.5Cu(SAC305)納米顆粒以及Bi2Te3納米顆粒被分別加入了Sn-58Bi焊膏和SAC305焊膏中以提高兩種焊膏的強(qiáng)度和熱機(jī)疲勞抗性。在試驗(yàn)中我們發(fā)現(xiàn)少量的納米顆粒確實(shí)可以提高焊點(diǎn)的強(qiáng)度,但是當(dāng)過多的納米顆粒被加入焊膏體系中,焊點(diǎn)的強(qiáng)度會(huì)再度由強(qiáng)變?nèi)�。這種現(xiàn)象可能是由焊點(diǎn)中嚴(yán)重的納米顆粒團(tuán)聚或者大量的孔洞引起的。另外,我們還發(fā)現(xiàn)縮小焊點(diǎn)中納米材料與基體材料在密度和熱膨脹系數(shù)(CTE)方面的差異,可以減小納米材料在回流焊接過程中的流失。在散熱方面,我們開發(fā)了一種由聚酰亞胺(PI)纖維網(wǎng)格強(qiáng)化的In金屬界面散熱材料(Nano-TIM)。除此之外,一種由Ag和Bi2Te3納米顆粒組成的納米結(jié)構(gòu)的熱電(TE)材料也被開發(fā)出來作為一種用于芯片上熱點(diǎn)的主動(dòng)散熱解決方案。根據(jù)所得實(shí)驗(yàn)結(jié)果,PI纖維網(wǎng)格可以提高In金屬界面散熱材料的機(jī)械性能且不失其自身較高的散熱性能。這一強(qiáng)化效果得益于表面鍍Ag的PI纖維網(wǎng)格對(duì)In金屬內(nèi)部裂紋擴(kuò)展的限制作用。本論文中所涉及的納米結(jié)構(gòu)熱電材料具有良好的導(dǎo)電能力以及極低的熱導(dǎo)率。這兩點(diǎn)是高性能熱電材料的必備條件。良好的電導(dǎo)率是通過加入適量的Ag納米顆粒實(shí)現(xiàn)的,極低的熱導(dǎo)率則是通過納米結(jié)構(gòu)中微小界面對(duì)聲子的散射實(shí)現(xiàn)的。
[Abstract]:Electronic packaging is an important component of electronic products because it can provide effective protection for vulnerable chips and provide conductive thermal access. The materials and structures used in electronic packaging will cost future electronic products. Size and performance have a great influence. In recent years, the trend of miniaturization and multifunction of electronic products is obvious. This trend has greatly increased the packaging density and power of electronic products. Therefore, the development of new materials and structures for electronic packaging is urgent. In this paper, we try to use nanomaterials to solve the problem of interconnection and heat dissipation in high-density electronic packaging. Vertically arranged carbon nanotubes (VACNTs) grown by thermochemical vapor deposition (TCVD) method are used as filling materials for silicon through pores. The vertical arrangement of carbon nanofibers (VACNF) prepared by plasma enhanced chemical vapor deposition (PECVD) is used either as a chip bump material or as a solder joint strengthening material. Many problems that may arise easily in conventional interconnection materials, such as electromigration and grain coarsening, can be significantly improved. In addition to the use of carbon-based materials, alloys and semiconductor nanomaterials are also used in interconnect materials. Nanocrystalline particles distributed in solder joints can effectively pinpoint dislocations and limit the growth of cracks. In this paper, Sn-3.0 Ag-0.5CuSSAC305) nanoparticles and Bi2Te3 nanoparticles were added to Sn-58Bi solder paste and SAC305 solder paste respectively to improve the strength and thermal fatigue resistance of the two kinds of solder paste. However, when too many nanoparticles are added to the solder paste system, the strength of the solder joint becomes weaker again. This phenomenon may be caused by the serious agglomeration of nanoparticles in the solder joint or a large number of holes. We also found that reducing the difference in density and thermal expansion coefficient (CTE) between nanomaterials and matrix materials in solder joints can reduce the loss of nanomaterials during reflux welding. We have developed an in metal interface heat dissipation material, Nano-TIMO, which is reinforced by polyimide (Pi) fiber mesh. A thermoelectric nanostructure composed of Ag and Bi2Te3 nanoparticles has also been developed as an active heat dissipation solution for hot spots on chips. According to the experimental results, Pi fiber mesh can improve in metal. The mechanical properties of interfacial heat dissipation materials without losing their own high heat dissipation properties. This strengthening effect is due to the limiting effect of Ag plated Pi fiber mesh on the internal crack growth of in metal. Structural thermoelectric materials have good conductivity and very low thermal conductivity. These two conditions are necessary for high performance thermoelectric materials. Good conductivity is achieved by adding appropriate amount of Ag nanoparticles. The very low thermal conductivity is achieved by scattering phonons from tiny interfaces in nanostructures.
【學(xué)位授予單位】：上海大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.1

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 Lingyun Zhou;Hui Zhang;Hui Zhang;Zhong Zhang;;Homogeneous nanoparticle dispersion prepared with impurity-free dispersant by the ball mill technique[J];Particuology;2013年04期

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本文編號(hào)：1537715