本文關(guān)鍵詞： 電沉積 氧化鋅 納米結(jié)構(gòu)陣列 柔性 染料敏化太陽(yáng)能電池　出處：《北京科技大學(xué)》2015年博士論文　論文類(lèi)型：學(xué)位論文

【摘要】：一維有序氧化鋅(ZnO)納米陣列與分級(jí)ZnO納米陣列以其優(yōu)越的結(jié)構(gòu)特性,被廣泛用作染料敏化太陽(yáng)能電池(DSSCs)的光陽(yáng)極材料。本論文采用低溫、簡(jiǎn)捷的電沉積法,在不同基底上可控制備得到不同形貌的ZnO納米結(jié)構(gòu)陣列,研究了電沉積參數(shù)對(duì)于ZnO納米結(jié)構(gòu)陣列合成的影響規(guī)律,探討了不同形貌ZnO納米結(jié)構(gòu)陣列的光電化學(xué)性質(zhì)。 采用一步電沉積方法,通過(guò)調(diào)控ZnO納米棒的生長(zhǎng)速度與自侵蝕速度,在FTO基底上制備得到了粒徑較小、尺寸均一、取向性好的ZnO納米管陣列,系統(tǒng)研究了基底預(yù)處理、溶液pH值、Zn2+濃度、沉積電位、沉積時(shí)間和沉積溫度對(duì)于可控制備ZnO納米管陣列的影響,闡明了ZnO納米管陣列的形成機(jī)理。通過(guò)調(diào)控ZnO納米管的形貌及結(jié)構(gòu),實(shí)現(xiàn)了對(duì)其禁帶寬度與光致發(fā)光特性的可控調(diào)節(jié)。探討了納米管表面的本證缺陷情況,測(cè)試了ZnO納米管的光電轉(zhuǎn)換性能。結(jié)果表明：在pH值為3.70的0.005mol L-1ZnCl2與0.1mol L-1KCl混合前驅(qū)液中,-1.3V下沉積10s獲得大量ZnO晶核后,-1.0V下沉積1800s可直接制備得到垂直于基底生長(zhǎng),平均直徑約為188nm,平均壁厚約為50nm的納米管陣列。但基于ZnO納米管陣列的光電轉(zhuǎn)換性能較差,僅為0.06%。 采用電沉積方法,在柔性不銹鋼網(wǎng)基底上,制備得到了尺寸均一、取向性好的ZnO納米棒陣列,詳細(xì)探討了沉積參數(shù)對(duì)于可控制備ZnO納米棒陣列的影響,實(shí)現(xiàn)了ZnO納米棒陣列的可控制備。研究了不同形貌ZnO納米棒陣列對(duì)DSSCs光電轉(zhuǎn)換效率的影響,初步闡明了兩者之間的相互依存關(guān)系。結(jié)果表明：采用0.0005mol L-1ZnCl2與0.1mol L-1KCl混合前驅(qū)液,在-1.O V下沉積1800s,重復(fù)沉積3次可使ZnO納米棒陣列的長(zhǎng)度由0.8μm增加至2.2μm,并獲得了0.43%的光電轉(zhuǎn)換效率。 采用兩步電沉積方法,通過(guò)對(duì)初級(jí)ZnO納米棒陣列進(jìn)行膠體鋪膜預(yù)處理,在柔性不銹鋼網(wǎng)基底上制備得到了“花狀”結(jié)構(gòu)的分級(jí)ZnO納米棒陣列。次級(jí)結(jié)構(gòu)直接生長(zhǎng)于初級(jí)ZnO納米棒的表面,平均直徑約為78nm,長(zhǎng)度約為500nm。探討了初級(jí)結(jié)構(gòu)與次級(jí)結(jié)構(gòu)制備參數(shù)對(duì)于分級(jí)結(jié)構(gòu)的影響,研究了基于不銹鋼網(wǎng)基底分級(jí)ZnO納米棒陣列光陽(yáng)極的光電轉(zhuǎn)化效率與相應(yīng)結(jié)構(gòu)之間的關(guān)系。結(jié)果表明：在柔性不銹鋼網(wǎng)基底上,基于分級(jí)ZnO納米棒陣列的DSSCs相比于初級(jí)ZnO納米棒陣列,其光電轉(zhuǎn)換性能由0.43%提升到了0.72%。采用ZnO納米粒子修飾分級(jí)ZnO納米棒陣列表面,在60℃下敏化6h后,可進(jìn)一步將ZnO基DSSCs的光電轉(zhuǎn)換效率提升至1.11%。
[Abstract]:One-dimensional ordered zinc oxide (ZnO) nanoarrays and graded ZnO nanoarrays are widely used as photoanode materials for dye sensitized solar cells due to their excellent structural properties. ZnO nanostructure arrays with different morphologies can be controlled on different substrates. The influence of electrodeposition parameters on the synthesis of ZnO nanostructure arrays is studied, and the photochemical properties of ZnO nanostructures arrays with different morphologies are discussed. By controlling the growth rate and self-erosion rate of ZnO nanorods, a ZnO nanotube array with small particle size, uniform size and good orientation was prepared on FTO substrate by one-step electrodeposition. The substrate pretreatment was systematically studied. The effects of pH value of solution Zn _ 2 concentration, deposition potential, deposition time and deposition temperature on the controllable preparation of ZnO nanotube arrays were discussed. The formation mechanism of ZnO nanotube arrays was elucidated by regulating the morphology and structure of ZnO nanotubes. The band gap and photoluminescence characteristics of the nanotubes are controlled, and the defects on the surface of nanotubes are discussed. The optoelectronic conversion properties of ZnO nanotubes were measured. The results showed that the substrate growth could be directly prepared by depositing a large number of ZnO nuclei at 10s in a mixture of 0.005mol / L ZnCl _ 2 and 0.1mol / L KCl at pH 3.70 for 10 s after depositing a large number of ZnO nuclei after depositing 1800s at -1.0 V, respectively, in the mixed precursor solution of 0.005mol / L ZnCl _ 2 and 0.1mol / L ~ (-1) KCl at pH 3.70. The average diameter is about 188nm, the average wall thickness is about 50nm, but the photoelectric conversion performance based on ZnO nanotube array is poor, only 0.06nm. ZnO nanorod arrays with uniform size and good orientation were prepared on flexible stainless steel mesh substrate by electrodeposition. The effect of deposition parameters on controllable preparation of ZnO nanorod arrays was discussed in detail. The controllable preparation of ZnO nanorod arrays was realized. The effect of ZnO nanorod arrays with different morphologies on the photoelectric conversion efficiency of DSSCs was studied, and the interdependence between them was preliminarily elucidated. The results showed that 0.0005mol L -1 ZnCl 2 and 0.1mol L -1 KCl were used as precursors. The length of ZnO nanorod array was increased from 0. 8 渭 m to 2. 2 渭 m by repeated deposition for 1800s at -1. 0 V, and the photoelectric conversion efficiency of 0.43% was obtained. A two-step electrodeposition method was used to pretreat the primary ZnO nanorods array by colloidal coating. A "flower-like" hierarchical ZnO nanorod array was prepared on a flexible stainless steel mesh substrate. The secondary structure was grown directly on the surface of the primary ZnO nanorods. The average diameter is about 78 nm and the length is about 500 nm. The effects of the preparation parameters of primary and secondary structures on the hierarchical structures are discussed. The relationship between the photoconversion efficiency and the corresponding structure of ZnO nanorod array photoanode based on stainless steel mesh substrates is studied. The results show that: on a flexible stainless steel mesh substrate, Compared with the primary ZnO nanorods array, DSSCs based on graded ZnO nanorod array has improved its photoelectric conversion performance from 0.43% to 0.720.The surface of graded ZnO nanorod array was modified by ZnO nanoparticles and sensitized at 60 鈩，

本文編號(hào)：1537609