本文關(guān)鍵詞： 二氧化硅溶膠 銅 復(fù)合薄膜 氧化銦錫 恒電位電沉積 循環(huán)伏安法 紫外-可見光譜 光學(xué)帶隙　出處：《電鍍與涂飾》2017年09期 　論文類型：期刊論文

【摘要】：以CuCl_2·2H_2O和正硅酸乙酯(TEOS)作為前驅(qū)體,配制了透明穩(wěn)定的Cu~(2+) SiO_2復(fù)合溶膠。采用循環(huán)伏安法研究了Cu~(2+)在該溶膠中的電化學(xué)性質(zhì),以恒電位法在氧化銦錫(ITO)導(dǎo)電玻璃表面沉積了凝膠復(fù)合薄膜。采用掃描電鏡、能譜、X射線衍射對(duì)復(fù)合薄膜進(jìn)行了表征,以紫外-可見光譜測試了薄膜的線性光學(xué)性能。結(jié)果表明,控制電位在-0.24~0.2 V和負(fù)于-0.24 V(相對(duì)于飽和甘汞電極)可分別制備出Cu~+ SiO_2和Cu SiO_2凝膠薄膜,前者的平均光學(xué)帶隙寬度(Eg)為1.94 e V,略高于后者的1.92 eV。由于Cu在溶膠中是連續(xù)成核,導(dǎo)致了Cu SiO_2凝膠薄膜中的Cu顆粒大小不均勻(在幾十納米至幾微米之間),吸收光譜在400~500 nm出現(xiàn)了Cu帶間遷移的吸收峰。
[Abstract]:CuCl_2 路2H _ 2O and tetraethyl orthosilicate were used as precursors. A transparent and stable Cu~(2) SiO_2 composite sol was prepared. The electrochemical properties of Cu~(2) in the sol were studied by cyclic voltammetry. Gel composite films were deposited on the surface of indium tin oxide (ITO) conductive glass by potentiostatic method. The composite films were characterized by scanning electron microscopy (SEM) and energy dispersive X-ray diffraction (EDS). The linear optical properties of the films were measured by UV-Vis spectra. The Cu ~ + SiO_2 and Cu ~ + SiO_2 gel films were prepared at -0.24V and -0.24V (relative to saturated calomel electrode) at the control potential of -0.24V and -0.24V, respectively. The average optical band gap width (Egg) of the former is 1.94 EV, which is slightly higher than that of the latter (1.92 EV). The results show that the Cu particles in the SiO_2 gel film are not uniform in size (between tens of nanometers and a few microns), and the absorption spectra show a peak of Cu interband migration at 400nm.
【作者單位】： 煤礦災(zāi)害動(dòng)力學(xué)與控制國家重點(diǎn)實(shí)驗(yàn)室重慶大學(xué)資源及環(huán)境科學(xué)學(xué)院;
【分類號(hào)】：O648.17;TB383.2
【正文快照】： 金屬(Au、Ag、Cu等)納米顆粒與電介質(zhì)基體(如Si O2、Ti O2、Ba Ti O3、Al2O3等)構(gòu)成的復(fù)合材料具有優(yōu)良的光學(xué)性能。Si O2有較大的介電常數(shù)和對(duì)紅外光有較大的透射率,與金屬構(gòu)成的金屬-Si O2復(fù)合材料已被廣泛研究,以用于集成光學(xué)器件。制備銅納米顆粒-介電復(fù)合材料常用的方法

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本文編號(hào)：1491322