發(fā)布時間：2018-02-01 23:54

  本文關(guān)鍵詞： 透明導(dǎo)電 AZO薄膜 磁控濺射 沉積溫度　出處：《熱加工工藝》2017年22期 　論文類型：期刊論文

【摘要】：以純度為99.99%氧化鋅鋁(w(Zn O)=98.00wt%,w(Al_2O_3)=2.00wt%)陶瓷靶為原料,利用直流磁控濺射法在普通白玻璃襯底上制備鋁摻雜氧化鋅(AZO)薄膜。利用X射線衍射儀(XRD)、掃描電鏡(SEM)、四點探針測試儀和紫外可見光分光光度計等對薄膜的形貌、結(jié)構(gòu)及光電性能進行分析。結(jié)果表明:薄膜具有c軸擇優(yōu)取向。隨沉積溫度升高,薄膜的結(jié)晶度先提高后下降,晶粒尺寸逐漸減小。當(dāng)沉積溫度為200℃時,可獲得晶粒尺寸為18.30 nm、電阻率為4.1×10~(-3)Ω·cm、透過率為93.80%的AZO透明導(dǎo)電薄膜。
[Abstract]:The ceramic target with purity of 99.99% Zinc-Al _ 2O _ 3 / Zn _ 2O _ (98.00) w _ (t) and W / S _ 2O _ 3 / 2. 00 W _ (t) is used as raw material. Aluminum-doped zinc oxide (AZO) thin films were prepared on ordinary white glass substrates by DC magnetron sputtering. The morphology, structure and optoelectronic properties of the films were analyzed by four-point probe tester and UV-Vis spectrophotometer. The results show that the films have c-axis preferred orientation and increase with deposition temperature. The crystallinity of the films first increases and then decreases, and the grain size decreases gradually. When the deposition temperature is 200 鈩，

本文編號：1483168