本文關(guān)鍵詞： 射頻磁控濺射 GZO薄膜 襯底溫度調(diào)制 光電性能　出處：《中國(guó)陶瓷》2017年01期 　論文類型：期刊論文

【摘要】：利用射頻磁控濺射法在石英玻璃襯底上制備ZnO∶Ga透明導(dǎo)電氧化物薄膜,主要研究了一種類調(diào)制摻雜工藝對(duì)GZO薄膜的薄膜形貌結(jié)構(gòu)和光電性能的影響。通過(guò)X射線衍射儀(XRD)、掃描電子顯微鏡(SEM)、紫外-可見-近紅外分光光度計(jì)(UV-VIS-NIR)和四探針測(cè)試儀對(duì)GZO薄膜進(jìn)行表征。結(jié)果表明:不同的襯底溫度調(diào)制下生長(zhǎng)的GZO薄膜都具有明顯的c軸擇優(yōu)取向,對(duì)于襯底溫度調(diào)制條件下,在150℃/RT條件下的薄膜結(jié)晶最好,且在可見近紅外波段(480~1600 nm)平均透過(guò)率達(dá)到85.4%左右,薄膜最低方阻達(dá)到60Ω/□。
[Abstract]:ZnO:Ga transparent conductive oxide thin films were prepared on quartz glass substrates by RF magnetron sputtering. The influence of a kind of modulation doping process on the morphology and optoelectronic properties of GZO thin films was studied by means of X-ray diffractometer (XRD) and scanning electron microscopy (SEM). UV-VIS-NIR spectrophotometer. The results show that the GZO films grown under different substrate temperature modulation have obvious c-axis preferred orientation. For substrate temperature modulation, the film crystallized best at 150 鈩，

本文編號(hào)：1472512