發(fā)布時(shí)間：2018-01-21 02:52

  本文關(guān)鍵詞： ZnO 水熱法 CVD 陣列 薄膜 摻雜 形貌　出處：《長(zhǎng)安大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：ZnO是一種寬禁帶(室溫下為3.37 eV)直接帶隙半導(dǎo)體材料,其波長(zhǎng)處于近紫外范圍,對(duì)可見光是透明的,氧化鋅的激子束縛能約為60 meV。氧化鋅能夠在比較低的溫度下制備,可以用不同的基底來(lái)生長(zhǎng),既能用單晶襯底(如藍(lán)寶石、Si等)來(lái)制備,又能用非晶襯底(如玻璃、塑料等)來(lái)制備。除過(guò)體單晶和薄膜,氧化鋅的納米構(gòu)成非常豐富,因?yàn)榧{米結(jié)構(gòu)有比表面積大的特點(diǎn),所以適用于傳感器領(lǐng)域。此外,氧化鋅的工藝簡(jiǎn)單、熱穩(wěn)定性高、體單晶易得等優(yōu)點(diǎn)。因此,ZnO是新一代的光電半導(dǎo)體材料,目前半導(dǎo)體材料與器件研究皆聚焦于此。本論文運(yùn)用水熱法、化學(xué)氣相沉積(CVD)法分別制備了氧化鋅納米陣列和薄膜,涂層對(duì)ZnO進(jìn)行Al摻雜、Ag/N雙摻雜,并制備異質(zhì)pn結(jié)。研討、剖析了氧化鋅納米陣列和薄膜的制備工藝、生長(zhǎng)機(jī)理及一些相干特性,大部分研究工作和結(jié)果如下:1、應(yīng)用浸漬提拉法在玻璃基片上涂覆ZnO晶種膜層,對(duì)晶種生成質(zhì)量的影響因素如Zn2+濃度、Zn源溶劑、涂覆次數(shù)、退火溫度進(jìn)行了較為細(xì)致的研究分析,并以此為依據(jù)優(yōu)化了二步法的晶種制備工藝。實(shí)驗(yàn)發(fā)現(xiàn)采用0.01M的乙酸鋅乙醇溶液涂覆8到10次并在500℃下退火處理2h可以獲得質(zhì)量較好的ZnO晶種膜層。2、以上述晶種層作為生長(zhǎng)基點(diǎn),在不同濃度的生長(zhǎng)溶液內(nèi)嘗試了ZnO納米棒的恒溫水浴生長(zhǎng),并在不同條件下進(jìn)行CVD法制備ZnO薄膜,對(duì)ZnO陣列和薄膜的SEM圖片做了初步探討與分析。研究發(fā)現(xiàn),以載玻片作襯底,水熱法采用0.05M的生長(zhǎng)溶液在95℃下恒溫水浴生長(zhǎng)4h到5h均可獲得取向良好、分布密實(shí)、直徑大小均勻的ZnO納米棒及其一維陣列。CVD法采用0.005M晶種溶液,三溫區(qū)管式爐的溫度為800℃-450℃-450℃生長(zhǎng)1h,充入O2流量35sccm、Ar2流量10sccm時(shí)可獲得顆粒尺寸均勻的ZnO納米薄膜。3、涂層制備ZnO納米薄膜,向其中摻雜Al、(Ag,N),在n-Si和p-Si上制備薄膜形成異質(zhì)pn結(jié),并測(cè)量它們的電阻值和I-V曲線。對(duì)電阻值進(jìn)行測(cè)量,n型摻雜的材料導(dǎo)電性比未摻雜的材料有了明顯的改善;對(duì)pn結(jié)進(jìn)行電學(xué)性能測(cè)量,ZnO異質(zhì)pn結(jié)出現(xiàn)了典型的整流曲線,相比而言,p-Si/ZnO:(Al)結(jié)比ZnO:(Ag,N)/n-Si結(jié)具有較好的電學(xué)性能;我們測(cè)定600℃退火溫度下的pn結(jié)的整流曲線,比未退火的pn結(jié)有較好的電學(xué)性能,而最適宜的退火溫度還需要我們進(jìn)一步探究。
[Abstract]:ZnO is a wide bandgap semiconductor (3.37eV at room temperature). Its wavelength is near ultraviolet, and it is transparent to visible light. The exciton binding energy of zinc oxide is about 60 MEV. Zinc oxide can be prepared at relatively low temperature and can be grown on different substrates, such as single crystal substrates (such as sapphire Si). Besides bulk single crystals and thin films, ZnO nanostructures are very rich because of their large specific surface area. In addition, zinc oxide has the advantages of simple process, high thermal stability and easy to obtain bulk single crystals. Therefore, ZnO is a new generation of optoelectronic semiconductor materials. In this thesis, ZnO nanoarrays and thin films were prepared by hydrothermal method and chemical vapor deposition (CVD) method, respectively. The coatings were used to doped ZnO with Al. The preparation process, growth mechanism and some coherent properties of ZnO nanoarrays and thin films are analyzed. Most of the research work and results are as follows: 1. The ZnO seed coating was coated on the glass substrate by impregnation Czochralski method. The factors affecting the seed formation quality such as Zn2 concentration Zn source solvent and the coating times were discussed. The annealing temperature was studied and analyzed in detail. On the basis of the above, the preparation process of the crystal seed by two-step method was optimized. It was found that the better quality Zn could be obtained by coating with 0.01m zinc acetate ethanol solution for 8 to 10 times and annealing at 500 鈩，

本文編號(hào)：1450239