本文關(guān)鍵詞：K-Cu-S三元體系準(zhǔn)一維納米結(jié)構(gòu)的生長及其電學(xué)性能表征　出處：《合肥工業(yè)大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： KCu_3S_2微米帶 KCu_7S_4微米帶 肖特基結(jié) 光電探測器

【摘要】：金屬硫化物納米材料因具有優(yōu)異的光電特性而成為太陽能能量轉(zhuǎn)換、光電器件、催化等前沿領(lǐng)域的研究熱點(diǎn)。對Cu-S體系成功摻雜,有效改變了Cu-S體系晶體結(jié)構(gòu)和光學(xué)性能,有助于拓展硫化物納米材料在納米光電子學(xué)研究中的新應(yīng)用。K-Cu-S三元體系是一類重要的銅硫酸鹽化合物,根據(jù)K+摻入Cu-S晶格體系的含量不同,銅離子不同的配位數(shù),銅原子不同的位置,形成不同結(jié)構(gòu)的三元硫化物并表現(xiàn)出不同的性質(zhì),如具有準(zhǔn)一維結(jié)構(gòu)的KCu7S4表現(xiàn)出低溫相變和電阻異常現(xiàn)象,可應(yīng)用于超級電容領(lǐng)域。本文探討了K-Cu-S三元體系準(zhǔn)一維納米結(jié)構(gòu)的液相可控合成,并系統(tǒng)表征了其電學(xué)、光電特性。具體研究工作如下：1、以N a2S·9H2O為硫源,CuCl為銅源,通過混合堿液法(NaOH和KOH的混合物,Na/K原子比為48.5：51.5),在165℃下成功合成了單斜晶系KCu3S2微米帶。SEM分析表明產(chǎn)物長約30～60μm,寬為500nm～1nm,厚為200～500 nm。通過對其紫外-可見吸收光譜、光致發(fā)光譜、外光電子能譜分析得到KCu3S2納米帶禁帶寬度為1.62 eV。電學(xué)測試表明產(chǎn)物KCu3S2微米帶電導(dǎo)率約為～1.85×103 S cm-1,基于單根KCu3S2微米帶的底柵型場效應(yīng)器件表明KCu3S2微米帶的導(dǎo)電類型為n型。2、在SiO2襯底上,構(gòu)筑了KCu3S2/Au特基結(jié)。Ⅰ-Ⅴ測試表明該肖特基結(jié)具有較好的整流特性,整流比在102～103之間。在光功率為3.5 mW cm-2的白光光照下,該肖特基結(jié)具有很強(qiáng)的敏感度,開關(guān)比50,響應(yīng)速度0.5s,上述良好性能說明KCu3S2微米帶有望用作較高性能的白光探測器。3、以Na2S-9H2O為硫源,CuC12為銅源,通過混合堿液法(NaOH和KOH的混合物,Na/K原子比為48.5：51.5),在80℃下成功合成了四方晶相結(jié)構(gòu)KCu7S4微米帶。SEM分析表明產(chǎn)物長約30～60μm,寬為100 nm～0.3μm,厚為50～80nm。電學(xué)測試測試表明產(chǎn)物KCu7S4微米帶電導(dǎo)率約為～6.85×102 S cm-1,基于單根KCu7S4微米帶的底柵型場效應(yīng)器件表明KCu7S4微米帶導(dǎo)電類型為p型。
[Abstract]:Metal Sulfide Nanomaterials with excellent photoelectric properties as solar energy conversion, photoelectric devices, and other cutting-edge research hotspot in the field of catalysis. The Cu-S system successfully doped Cu-S system, effectively change the crystal structure and optical properties, will help expand the sulfide nano materials in the research of nano optoelectronics application.K-Cu-S system is three yuan one of the most important copper sulfate compounds, according to the content of K+ is incorporated into the Cu-S lattice system is different, with different number of copper ions, copper atoms in different positions, the formation of three yuan of sulfide with different structure and exhibit different properties, such as KCu7S4 has a quasi one-dimensional structure showed abnormal phase change temperature and resistance, can be used in the field of super capacitor. This paper discusses the K-Cu-S three element system of quasi one-dimensional nanostructures of liquid phase controlled synthesis, and characterization of the electrical system, the photoelectric characteristics of concrete. The research work is as follows: 1, with N a2S 9H2O as sulfur source, CuCl as copper source, through the mixed alkali (a mixture of NaOH and KOH, Na/K atomic ratio is 48.5:51.5), under the temperature of 165 DEG C successfully synthesized monoclinic KCu3S2 microbelts.SEM analysis showed that the product was about 30 ~ 60 m, width 500nm ~ 1nm, thickness of 200 ~ 500 nm. by the UV Vis absorption spectra, photoluminescence spectra, and X-ray photoelectron spectroscopy to obtain KCu3S2 nano with band gap of 1.62 eV. electrical test showed that the product was about KCu3S2 micron charged by ~ 1.85 x 103 S cm-1 bottom gate type single KCu3S2 microbelts the field effect devices show that the conductive type KCu3S2 microbelts based on N.2, on the SiO2 substrate, build KCu3S2/Au Schottky junction. The I-V tests show that it has better characteristics of Schottky rectifier, rectifier ratio from 102 to 103. To light power of 3.5 mW cm-2 Bai Guangguang, the Shaw Schottky junction has a strong sensitivity of the switch 50, the response speed of 0.5s, the good performance of KCu3S2 with.3 as detector at the micron white high performance, using Na2S-9H2O as sulfur source, CuC12 as copper source, through the mixed alkali (a mixture of NaOH and KOH, Na/K atomic ratio is 48.5:51.5), in 80 C synthesis of tetragonal phase KCu7S4 microbelts.SEM analysis showed that the product was about 30 ~ 60 m, width of 100 nm ~ 0.3 m, thickness 50 ~ 80nm. electrical test showed that the product was about KCu7S4 micron charged by ~ 6.85 x 102 S cm-1 bottom gate type single KCu7S4 microbelts the field effect devices show that the conductive type KCu7S4 microbelts is based on P type.

【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.1

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 冉新權(quán);郭志箴;陳佩珩;馬晉華;王}，

本文編號：1411751