本文關(guān)鍵詞：電子封裝用低膨脹、高導(dǎo)熱銅基復(fù)合材料的制備及其性能研究　出處：《江蘇大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： Cu/Sc_2W_3O_(12) Cu/SiC/Sc_2W_3O_(12) 低熱膨脹 高導(dǎo)熱

【摘要】：隨著電子元器件朝著更小、更輕和更快的趨勢發(fā)展,其集成化程度也急劇升高,伴隨而來的是芯片發(fā)熱量大幅增加,以及材料的受熱變形,傳統(tǒng)的Al和Cu等封裝材料已無法滿足其熱性能要求,因此開發(fā)低膨脹、高導(dǎo)熱封裝材料成了一個必然趨勢。本文以Cu為基體材料,以負熱膨脹材料Sc_2W_3O_(12)和低熱膨脹材料SiC為增強相,采用粉末冶金法制備了Cu/Sc_2W_3O_(12)和Cu/SiC/Sc_2W_3O_(12)復(fù)合材料,并對所得復(fù)合材料的微觀結(jié)構(gòu)和熱性能進行了詳細表征,主要研究內(nèi)容及成果如下:(1)使用分步固相法制備的片狀Sc_2W_3O_(12)粉為原料,和Cu粉按不同質(zhì)量比混合均勻后,壓制成Φ10mm×1.5mm的圓片,通過常壓還原氣氛燒結(jié)制備出Cu/Sc_2W_3O_(12)復(fù)合材料,通過掃描電鏡(SEM)、X射線衍射儀(XRD)對其微觀組織進行了表征,使用熱機械分析儀(TMA)測定其熱膨脹系數(shù),用激光閃射儀(LFA)測量其導(dǎo)熱系數(shù)。結(jié)果顯示,復(fù)合材料熱膨脹系數(shù)最小值為2.1×10~(-6)/K,當溫度高于600℃時,復(fù)合材料內(nèi)部出現(xiàn)了Cu_(0.4)W_(0.6)合金相,為避免合金化,選擇600℃作為復(fù)合材料的燒結(jié)溫度,但低于高致密度Cu的燒結(jié)溫度,導(dǎo)致復(fù)合材料致密度不高,導(dǎo)熱也受影響,導(dǎo)熱系數(shù)最大值為77.5W/(m?K)。(2)為提高復(fù)合材料的致密度,選用真空熱壓燒結(jié)制備Cu/Sc_2W_3O_(12)復(fù)合材料,考察了Sc_2W_3O_(12)顆粒形貌和燒結(jié)溫度對復(fù)合材料微觀組織、熱性能的影響。結(jié)果表明,以納米Sc_2W_3O_(12)粉為原料,于700℃制備的~*Cu60復(fù)合材料的致密度最高,達到92.44%,且Cu基體形成了均勻、完整的網(wǎng)絡(luò)狀結(jié)構(gòu),有利于熱量的傳導(dǎo),相應(yīng)的~*Cu60復(fù)合材料的導(dǎo)熱系數(shù)和熱膨脹系數(shù)分別為243.99W/(m?K)和9.02×10~(-6)/K,硬度也達到了234.32HV。提高燒結(jié)溫度到800℃后,小顆粒Sc_2W_3O_(12)出現(xiàn)了再結(jié)晶,*Cu60復(fù)合材料的熱膨脹系數(shù)進一步降為7.27×10~(-6)/K,接近于Si或GaAs等芯片材料的熱膨脹系數(shù)值,致密度下降為91.6%,相應(yīng)的導(dǎo)熱系數(shù)也下降為208.64W/(m?K),硬度下降為205.4HV,因考慮到封裝材料對于低膨脹、高導(dǎo)熱的應(yīng)用要求,Cu/Sc_2W_3O_(12)復(fù)合材料的最佳熱壓燒結(jié)溫度為800℃。(3)為了進一步改善Cu/Sc_2W_3O_(12)復(fù)合材料的熱性能,引入納米SiC顆粒作為第二增強相,采用真空熱壓燒結(jié)制備了Cu/SiC/Sc_2W_3O_(12)復(fù)合材料,研究了SiC含量及燒結(jié)溫度對復(fù)合材料顯微組織和熱性能的影響,結(jié)果表明,SiC增強相的引入提高了復(fù)合材料的致密化燒結(jié)溫度,當燒結(jié)溫度提高到1000℃,燒結(jié)進行充分,斷口形貌顯示為規(guī)則的韌窩斷口,且復(fù)合粉體的兩種增強相顆粒分布均勻;納米SiC粉末的加入增加了燒結(jié)活化能,促進了1000℃時熔融態(tài)Cu的流動,復(fù)合材料的最大致密度達到了92.86%,相應(yīng)的熱膨脹系數(shù)和導(dǎo)熱系數(shù)分別為13.33×10~(-6)/K和251.18W/(m?K),其熱膨脹系數(shù)有些偏高,不符合應(yīng)用要求,而1000℃燒結(jié)所得60%Cu10%SiC30%Sc_2W_3O_(12)復(fù)合材料的熱膨脹系數(shù)僅為7.12×10~(-6)/K,相應(yīng)的導(dǎo)熱系數(shù)為230.60W/(m?K),二者均滿足封裝材料的應(yīng)用條件。
[Abstract]:Along with the electronic components towards smaller, lighter and faster development trend, the integration degree also increased dramatically, accompanied by the chip heat increase, and the thermal deformation of the material, the traditional Al and Cu packaging materials have been unable to meet the requirements of the thermal performance, due to the development of low expansion, high thermal conductivity packaging materials have become an inevitable trend. This paper takes Cu as the matrix material with negative thermal expansion material Sc_2W_3O_ (12) and low thermal expansion material SiC as reinforcement, Cu/Sc_2W_3O_ were fabricated by powder metallurgy (12) and Cu/SiC/Sc_2W_3O_ (12) composite materials, and the microstructure and thermal properties of the composite materials a detailed characterization, the main research contents and results are as follows: (1) using sheet Sc_2W_3O_ step solid phase preparation (12) powder and Cu powder in different mass ratio of mixing, pressing with diameter of 10mm * 1.5mm wafer, by means of it Reducing atmosphere sintering preparation of Cu/Sc_2W_3O_ (12) composite materials by scanning electron microscopy (SEM), X ray diffraction (XRD) on the microstructure were characterized using thermo mechanical analyzer (TMA) determination of the thermal expansion coefficient, using laser instrument (LFA) to measure the thermal conductivity coefficient. The results showed that composite thermal expansion coefficient of the minimum value is 2.1 * 10~ (-6) /K, when the temperature is higher than 600 DEG C, the composite appeared in Cu_ (0.4) W_ (0.6) alloy phase, in order to avoid alloying, 600 DEG C as sintering temperature of composite materials, but below the sintering temperature of high density Cu. The resulting composite material density is not high, thermal conductivity is also affected by the thermal conductivity, the maximum value is 77.5W/ (M? K). (2) to improve the density of the composite material, preparation of Cu/Sc_2W_3O_ using vacuum hot pressing sintering (12) composite materials, the effects of Sc_2W_3O_ (12) on the microstructure of composite particle morphology and sintering the temperature of the heat. Can the effect. The results showed that the nano Sc_2W_3O_ powder (12) as raw materials, ~*Cu60 composite material at 700 DEG C prepared by the highest density reached 92.44%, and the Cu matrix formed a uniform and complete network structure, is conducive to heat conduction, ~*Cu60 composite material corresponding to the thermal conductivity and thermal expansion the coefficient were 243.99W/ (M? K) and 9.02 * 10~ (-6) /K, the hardness reached 234.32HV. higher sintering temperature to 800 DEG C, small particles of Sc_2W_3O_ (12) appeared recrystallization, thermal expansion coefficient of *Cu60 composites is further reduced to 7.27 * 10~ (-6) /K, or close to Si the GaAs chip material thermal expansion coefficient, the density decreased to 91.6%, the corresponding thermal conductivity coefficient also decreases to 208.64W/ (M? K), hardness decreased to 205.4HV, due to packaging materials for low expansion, application requirements of high thermal conductivity, Cu/Sc_2W_3O_ (12) the best sintering temperature of the composite was 800 C. (3) Cu/Sc_2W_3O_ (12) in order to further improve the thermal properties of composite materials, the introduction of nano SiC particles as reinforcing phase second, Cu/SiC/Sc_2W_3O_ were prepared by vacuum hot pressing sintering (12) composite materials, studied the effects of SiC content and sintering temperature on the properties of the composite microstructure and thermal properties of the results show that SiC reinforcement could improve the densification of composites when the sintering temperature, sintering temperature increase to 1000 degrees Celsius, sintering sufficient, fracture morphology was the rules of the dimple, and the two kinds of particles were homogeneous composite powder; nano SiC powder was increased with the sintering activation energy, promote the flow of the molten Cu at 1000 DEG C, the maximum density reached 92.86% composites, the corresponding thermal expansion coefficient and thermal conductivity were 13.33 * 10~ (-6) /K and 251.18W/ (M? K), the thermal expansion coefficient of some high, does not meet the application It is required that the thermal expansion coefficient of 60%Cu10%SiC30%Sc_2W_3O_ (12) composite material sintered at 1000 C is only 7.12 * 10~ (-6) /K, and the corresponding thermal conductivity is 230.60W/ (M? K), two of which meet the application conditions of packaging materials.

【學(xué)位授予單位】：江蘇大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TB333

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