本文關(guān)鍵詞：氧化鋅納米顆粒及其異質(zhì)結(jié)構(gòu)表面光伏特性　出處：《河南大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 氧化鋅納米顆粒 CdSe量子點(diǎn) 表面光伏 Kelvin探針

【摘要】：氧化鋅(Zn O)因其優(yōu)越的光電特性,得到了人們?cè)絹?lái)越多的關(guān)注,人們?cè)赯n O的生長(zhǎng)機(jī)理,形貌調(diào)控和發(fā)光機(jī)制方面有了很多的理論研究,伴隨著Zn O材料尺寸的降低,人們的研究重點(diǎn)從宏觀區(qū)域轉(zhuǎn)移到了微納區(qū)域。Zn O納米顆粒越來(lái)越多的受到了人們的關(guān)注,人們利用其優(yōu)異的特性制備了許多光電器件例如太陽(yáng)能電池、LED以及傳感器等。Cd Se量子點(diǎn)和有機(jī)聚合物在太陽(yáng)能轉(zhuǎn)換、照明、顯示技術(shù)和生物標(biāo)記等領(lǐng)域都有潛在的應(yīng)用前景。在相同的條件下,Zn O納米顆粒和Cd Se量子點(diǎn)以及有機(jī)聚合物的異質(zhì)結(jié)構(gòu)通常要比單獨(dú)的納米光電材料具有更加優(yōu)越的光學(xué)性能和電子傳輸能力,因此我們有必要了解Zn O納米顆粒及其異質(zhì)結(jié)構(gòu)的表面和界面光電特性,對(duì)于我們?cè)O(shè)計(jì)和制備新型納米光電子器件具有重要的意義。在本文中,我們通過(guò)表面光伏技術(shù)—Kelvin探針探究了Zn O納米顆粒及其異質(zhì)結(jié)構(gòu)的表面光伏特性。主要內(nèi)容如下:1、以醋酸鋅、四甲基氫氧化銨和二甲基亞砜為主要原料,采用溶膠-凝膠法制備Zn O納米顆粒,利用透射電子顯微鏡,X射線衍射儀和光致發(fā)光譜對(duì)樣品進(jìn)行表征,結(jié)果表明Zn O納米顆粒為纖鋅礦結(jié)構(gòu),粒徑尺寸不均一。光致發(fā)光譜能夠觀察到可見光發(fā)光特性,表明Zn O納米顆粒存在較多的缺陷態(tài)。在ITO基底上旋涂Zn O納米顆粒,再利用Kelvin探針技術(shù)結(jié)合光譜儀,探究Zn O納米顆粒在不同實(shí)驗(yàn)條件下的表面光伏特性。2、利用液相高溫?zé)嶙⑷敕椒?制備Cd Se量子點(diǎn),利用透射電鏡,紫外熒光吸收對(duì)樣品進(jìn)行表征,結(jié)果表明Cd Se量子點(diǎn)粒徑尺寸均一,隨著反應(yīng)時(shí)間的增加,粒徑的尺寸增大,吸收峰紅移。結(jié)合制備的Zn O納米顆粒,制備Zn O/Cd Se異質(zhì)結(jié)構(gòu),基于Kelvin探針的表面光伏技術(shù)用于探究其異質(zhì)結(jié)構(gòu)的表面光伏特性。3、利用前面合成的Zn O納米顆粒,結(jié)合P3AT(聚-3十二烷基噻吩)經(jīng)過(guò)旋涂制備異質(zhì)異質(zhì)結(jié)構(gòu),利用Kelvin探針研究異質(zhì)結(jié)構(gòu)的表面光伏特性,通過(guò)改變P3AT的濃度,發(fā)現(xiàn)異質(zhì)結(jié)構(gòu)界面態(tài)隨著濃度的增加而增加。改變不同的退火溫度,在P3AT吸收光子范圍內(nèi),光伏起始峰位隨著溫度改變而改變。
[Abstract]:Zinc oxide (ZnO) has attracted more and more attention due to its excellent photoelectric properties. There have been many theoretical studies on the growth mechanism, morphology regulation and luminescence mechanism of ZnO. With the decrease of Zno material size, people pay more and more attention to the research focus from macroscopic region to micro-nano region. Many photovoltaic devices, such as solar cell LED and sensors, have been fabricated by using their excellent properties. CD se quantum dots and organic polymers have been converted and illuminated in solar energy. Display techniques and biomarkers have potential applications. Under the same conditions. The heterostructures of ZnO nanoparticles, CD se quantum dots and organic polymers usually have better optical properties and electron transport ability than the single nano-optoelectronic materials. Therefore, it is necessary to understand the surface and interface optoelectronic properties of Zno nanoparticles and their heterostructures, which is of great significance for the design and fabrication of novel nano-optoelectronic devices. The surface photovoltaic properties of Zno nanoparticles and their heterostructures were investigated by using the surface photovoltaic technique-Kelvin probe. The main contents are as follows: 1, zinc acetate. ZnO nanoparticles were prepared by sol-gel method with tetramethyl ammonium hydroxide and dimethyl sulfoxide as main raw materials. The samples were characterized by transmission electron microscopy (TEM) X-ray diffraction and photoluminescence spectroscopy. The results show that the Zno nanoparticles are wurtzite structure and the size is not uniform. The visible luminescence characteristics can be observed by photoluminescence spectra. The results show that there are many defects in Zno nanoparticles. The Zno nanoparticles are spin-coated on the ITO substrate, and then the Kelvin probe technique is used to combine with the spectrometer. The surface photovoltaic properties of ZnO nanoparticles under different experimental conditions were investigated. CD se quantum dots were prepared by liquid phase high temperature thermal injection and transmission electron microscopy (TEM) was used. The results show that the particle size of CD se quantum dots is uniform and the size increases with the increase of reaction time. The ZnO / CD se heterostructure was prepared by combining the ZnO nanoparticles with the red shift of absorption peak. The surface photovoltaic technology based on Kelvin probe is used to study the surface photovoltaic properties of the heterostructure. Heterostructures were prepared by spin coating with P3AT (poly-12 alkyl thiophene). The surface photovoltaic properties of the heterostructures were studied by Kelvin probe, and the concentration of P3AT was changed. It is found that the interface states of the heterostructure increase with the increase of concentration, and the initial photovoltaic peak position changes with the change of temperature in the range of P3AT absorption photons by changing the annealing temperature.
【學(xué)位授予單位】：河南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.1

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本文編號(hào)：1398012