發(fā)布時間：2018-01-05 13:01

  本文關(guān)鍵詞：Mn-Co-Ni-O系熱敏薄膜的磁控濺射方法制備及其光電性能研究　出處：《新疆大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 薄膜厚度 特征溫度 過渡族金屬氧化物 射頻磁控濺射

【摘要】：以Mn,Co,Ni為主的尖晶石過渡族金屬氧化物(AB2O4)是一種具有負(fù)溫度系數(shù)的熱敏材料,它具有較高的溫度電阻(TCR),耐老化性能好,工作溫度范圍和光譜的反應(yīng)范圍廣,能夠長期穩(wěn)定工作等優(yōu)點(diǎn),被廣泛應(yīng)用于溫度測量計(jì),輻射熱測量計(jì)和非致冷型紅外探測儀等精確測量儀器上。在Mn-Co-Ni-O系材料的制備方面,主要有物理方法和化學(xué)方法兩種方法,其中高溫固相法等物理方法已經(jīng)具備了較為成熟的工藝體系。本文以高溫固相合成法作為基礎(chǔ),以射頻磁控濺射為主要手段,對Mn-Co-Ni-O系薄膜的制備工藝進(jìn)行了摸索,并對所制備的Mn-Co-Ni-O系薄膜的物相結(jié)構(gòu),電學(xué),光學(xué)性能以及它們之間的聯(lián)系進(jìn)行了研究。本文的研究工作主要從以下幾個方面展開:(1)磁控濺射制備Mn-Co-Ni-O系薄膜使用磁控濺射方法在Si O2/Si襯底上生長Mn-Co-Ni-O系薄膜,通過對一系列工藝參數(shù)的摸索和比較,找出最佳的生長條件,并希望改變生長條件,對所制備的薄膜厚度進(jìn)行控制。希望能對Mn-Co-Ni-O系陶瓷材料的微型化提供參考。(2)Mn-Co-Ni-O系薄膜的物相和形貌表征采用磁控濺射方法制備了一系列不同厚度的Mn-Co-Ni-O系薄膜,通過EDS,XRD,XPS等手段對不同厚度薄膜進(jìn)行物相的定量和定性分析,發(fā)現(xiàn)不同厚度薄膜的Mn,Co,Ni元素比例沒有太大區(qū)別,但樣品中Mn3+和Mn4+的比例卻發(fā)生了規(guī)律性的變化。采用FESEM,AFM對不同厚度薄膜進(jìn)行形貌表征。(3)Mn-Co-Ni-O系薄膜的電學(xué)性能分析對厚度組Mn-Co-Ni-O系薄膜電學(xué)性能進(jìn)行了研究。根據(jù)以往的研究表明,在薄膜材料中,隨著薄厚的增加,薄膜材料的室溫電阻(R0)和特征溫度(T0,有些研究中稱為B值)都會減小。但是按照這個趨勢,塊體材料的特征溫度(T0)應(yīng)該小于薄膜材料。實(shí)際上同種工藝參數(shù)制備塊體材料的特征溫度(B值)卻相差不大,通過對一系列200nm-900nm左右薄膜研究,發(fā)現(xiàn)存在著這樣一個線性關(guān)系:201/()cTμd-d或20ln()()cTμd-d,其中d為薄膜的厚度,dc為薄膜材料特征溫度轉(zhuǎn)折點(diǎn)(或B值轉(zhuǎn)折點(diǎn))的膜厚。并且,當(dāng)材料由二維材料變?yōu)槿S的塊體材料時依然適用。為了驗(yàn)證該曲線擬合的正確性,這里結(jié)合以往其他研究者的一些數(shù)據(jù),發(fā)現(xiàn)大致符合這一規(guī)律。并結(jié)合霍爾效應(yīng)測試對薄膜材料的載流子濃度,半導(dǎo)體類型分析,同時結(jié)合小極化子躍遷模型對這一現(xiàn)象進(jìn)行解釋。(4)Mn-Co-Ni-O系薄膜的光學(xué)性能分析采用紅外橢圓偏振光譜儀器對不同厚度的Mn-Co-Ni-O系薄膜進(jìn)行測量,得到一系列不同厚度樣品的紅外橢偏譜。通過儀器擬合得到近紅外和可見光區(qū)域范圍內(nèi)薄膜光學(xué)系數(shù)的變化,并對不同厚度薄膜進(jìn)行對比分析。
[Abstract]:Spinel transition metal oxide (AB _ 2O _ 4) is a kind of thermal sensitive material with negative temperature coefficient. It has high temperature resistance and good aging resistance. Because of its wide range of reaction temperature and spectrum and the ability to work stably for a long time, it has been widely used in temperature measurement. In the accurate measuring instruments such as radiation calorimeter and uncooled infrared detector, there are two main methods in the preparation of Mn-Co-Ni-O system materials: physical method and chemical method. The physical methods such as high temperature solid phase method have already had a more mature process system. This paper takes the high temperature solid state synthesis method as the foundation and the radio frequency magnetron sputtering as the main means. The preparation process of Mn-Co-Ni-O system thin films was explored, and the phase structure and electricity of the prepared Mn-Co-Ni-O system films were also studied. The optical properties and the relationship between them are studied in this paper. Mn-Co-Ni-O films were prepared by magnetron sputtering. Mn-Co-Ni-O films were grown on Sio _ 2 / Si substrates by magnetron sputtering. Through the exploration and comparison of a series of technological parameters, the best growth conditions are found, and the growth conditions are desired to be changed. The thickness of the prepared films is controlled. It is hoped that it can provide a reference for the miniaturization of Mn-Co-Ni-O system ceramics. Phase and morphology characterization of Mn-Co-Ni-O films A series of Mn-Co-Ni-O films with different thickness were prepared by magnetron sputtering. The quantitative and qualitative analysis of the phases of thin films with different thickness by means of EDS- XRDX XPS shows that there is no significant difference in the proportion of Ni elements in mn _ (Co) O _ (2) O _ (2) films with different thickness. However, the proportion of Mn3 and Mn4 in the sample changed regularly. FESEM was used. Morphology characterization of thin films with different thickness by AFM. The electrical properties of Mn-Co-Ni-O films were analyzed. The electrical properties of Mn-Co-Ni-O films with thickness group were studied. In thin film materials, the room temperature resistance (R0) and the characteristic temperature (T _ 0) of the thin film materials decrease with the increase of the thickness, which is called "B value" in some studies, but according to this trend. The characteristic temperature of bulk material (T0) should be smaller than that of thin film material. In fact, the characteristic temperature (B value) of the same process parameters for the preparation of bulk material is not much different. A series of thin films about 200nm-900nm have been studied. It is found that there is a linear relationship between the 10 ~ (-1) C ~ (-1) C ~ (d-d) or the ~ (20) lnn ~ (2 +) C ~ (-T) 渭 d ~ (d-d). Where d is the thickness of the film and DC is the thickness of the film at the temperature turning point (or B value turning point) of the film material. In order to verify the correctness of the curve fitting, some data from other researchers are used in this paper. It is found that this rule is approximately in accord with this rule. The carrier concentration and semiconductor type of the thin film materials are analyzed with Hall effect test. At the same time, the phenomenon is explained by the small polaron transition model. The optical properties of Mn-Co-Ni-O thin films were analyzed. The Mn-Co-Ni-O films with different thickness were measured by infrared elliptical polarization spectrometer. Infrared ellipsometry spectra of a series of samples with different thickness were obtained. The optical coefficients of thin films in the range of near infrared and visible light were obtained by means of instrument fitting, and the films of different thickness were compared and analyzed.
【學(xué)位授予單位】：新疆大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.2

【共引文獻(xiàn)】

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3 周煒;歐陽程;吳敬;高艷卿;黃志明;;錳鈷鎳氧浸沒式探測器制備及性能[J];紅外與毫米波學(xué)報(bào);2015年02期

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本文編號：1383211