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  本文關(guān)鍵詞：多層結(jié)構(gòu)紫外透明導(dǎo)電薄膜的制備及性能研究　出處：《大連理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 射頻磁控濺射 氧化物薄膜 Ag膜 紫外透明導(dǎo)電薄膜

【摘要】：透明導(dǎo)電氧化物薄膜具有較高的可見光透過率及良好的導(dǎo)電性,因而廣泛應(yīng)用于傳感器、平板顯示器、太陽能電池等領(lǐng)域。目前,應(yīng)用較多的是銦錫氧化物薄膜(ITO)及氧化鋅(ZnO)薄膜,這是由于ITO薄膜透過率高、電阻率低、功函數(shù)高；ZnO薄膜價(jià)格便宜,沉積溫度相對(duì)較低和在氫氣氣氛下具有更好的穩(wěn)定性等優(yōu)點(diǎn)。但是,傳統(tǒng)透明導(dǎo)電薄膜由于帶隙寬度的限制,其難以透過波長小于350nm的紫外光。同時(shí),材料的禁帶寬度越大,將其摻雜成為導(dǎo)電材料的困難也越大,所以具有優(yōu)良導(dǎo)電特性的單層深紫外透明導(dǎo)電薄膜也較難制備。近年來,金屬材料與寬禁帶半導(dǎo)體材料所組成的“三明治型”多層結(jié)構(gòu)獲得了廣泛關(guān)注,成為紫外透明導(dǎo)電薄膜研究領(lǐng)域的新熱點(diǎn)。本論文綜合論述了透明導(dǎo)電薄膜的研究進(jìn)展及應(yīng)用前景,利用磁控濺射技術(shù)制備了Ag薄膜、鎵砷氧化物薄膜以及二者構(gòu)成的多層結(jié)構(gòu)紫外透明導(dǎo)電薄膜。通過調(diào)整Ag薄膜與鎵砷氧化物薄膜的厚度,以及對(duì)Ag膜進(jìn)行退火處理,采用X射線衍射儀、金相顯微鏡、紫外-可見分光光度計(jì)、霍爾測(cè)試儀對(duì)Ag薄膜、鎵砷氧化物薄膜以及多層結(jié)構(gòu)的各方面性質(zhì)進(jìn)行了分析和討論。主要工作如下：1.Ag薄膜的制備與優(yōu)化。實(shí)驗(yàn)采用射頻磁控濺射技術(shù)制備了不同厚度的Ag薄膜,研究了厚度對(duì)Ag薄膜結(jié)構(gòu)形貌及光電性質(zhì)的影響,確定最佳的厚度參數(shù)。此外還研究了退火處理對(duì)Ag薄膜光學(xué)和電學(xué)特性的影響。2.鎵砷氧化物的制備與優(yōu)化。采用射頻磁控濺射技術(shù)在c面藍(lán)寶石襯底上制備了不同厚度的鎵砷氧化物薄膜,研究了厚度對(duì)薄膜光電性質(zhì)的影響,確定性能最優(yōu)的厚度參數(shù)。3.鎵砷氧化物-Ag-鎵砷氧化物多層結(jié)構(gòu)紫外透明導(dǎo)電膜的制備與表征。結(jié)合前面的研究結(jié)果,利用優(yōu)化參數(shù)制各了鎵砷氧化物-Ag-鎵砷氧化物多層結(jié)構(gòu),并分析了多層膜的光電性質(zhì)。此外還研究了Ag層退火對(duì)多層結(jié)構(gòu)的光學(xué)和電學(xué)特性的影響。實(shí)驗(yàn)結(jié)果表明：濺射生長的Ag薄膜具有(111)取向；單層Ag膜為12nm時(shí),薄膜兼具良好的透過性和導(dǎo)電性,退火后Ag膜晶粒稍有變大,其光電性質(zhì)略有提高。實(shí)驗(yàn)中所制備的單層鎵砷氧化物薄膜均呈現(xiàn)出高阻特性,當(dāng)單層鎵砷氧化物薄膜的厚度為32.5nm時(shí),在可見和紫外光區(qū)具有良好的透過性�；趦�(yōu)化參數(shù)制備的多層薄膜在310-350nm波段范圍內(nèi)的平均透射率在50%以上,電阻率為2.79Ω/□,具備良好的紫外透明導(dǎo)電特性。
[Abstract]:Transparent conductive oxide thin films with high visible light transmittance and good conductivity rate, so it is widely used in sensors, flat panel display, solar cells and other fields. At present, the application is more indium tin oxide film (ITO) and Zinc Oxide (ZnO) film, this is because the ITO film has high transmittance, low resistivity, power the function of ZnO film high; the price is cheap, relatively low deposition temperature and has better stability in hydrogen atmosphere. However, the traditional transparent conductive film because of the band gap width restrictions, it is difficult to through the ultraviolet wavelength is less than 350nm. At the same time, the bandgap is larger, the doping of conductive materials become difficult the greater the monolayer, so with excellent electrical properties of deep ultraviolet transparent conductive film is difficult to prepare. In recent years, metal materials with wide bandgap semiconductor material which is composed of "sandwich" multilayer The structure has gained widespread attention, has become the new focus of UV transparent conducting thin film research field. This paper discussed the transparent conductive film advances in research and application, Ag films were prepared by magnetron sputtering technique, a multilayer gallium arsenic oxide film and the two node transparent conductive thin film structure by adjusting the Ag UV. Thin film with gallium arsenic oxide film thickness, and the Ag film was annealed by X ray diffraction, optical microscope, UV VIS spectrophotometer, Holzer tester of Ag film, gallium arsenic oxide film and the properties of the multilayer structure are analyzed and discussed. The main work is as follows: preparation and optimization of 1.Ag thin films by RF magnetron sputtering technique. The experiment system of Ag thin films with different thickness were prepared. The effects of the thickness of the Ag thin film structure and photoelectric properties, determine the optimum thickness of ginseng The number. In addition, the effects of annealing treatment on the optical and electrical properties of Ag thin films.2. gallium arsenic oxide preparation and optimization. In the C plane sapphire substrates, a gallium arsenic oxide thin films with different thickness were prepared by radio-frequency magnetron sputtering technique, studied the effect of thickness of thin film photoelectric properties, optimal thickness the parameters of.3. -Ag- oxide gallium arsenide gallium arsenic oxide multilayer structure UV transparent conductive film preparation and characterization. Combined with previous research results, using optimization parameters for the gallium arsenide gallium arsenic oxide -Ag- oxide multilayer structure, and analyzes the photoelectric properties of multilayer films. In addition effect of optical and electrical properties of Ag layers of multilayer annealing the structure is also studied. The experimental results show that Ag thin films grown with the (111) orientation; monolayer Ag films 12NM films, both permeability and good conductivity, annealed Ag film grain Slightly larger, the photoelectric properties increased slightly. The single gallium arsenic oxide thin films prepared in the experiment showed high resistance characteristics, when the single gallium oxide thin film thickness is 32.5nm, in the visible and ultraviolet region has good permeability. The optimization parameters of preparation of multilayer films in the wavelength range 310-350nm the average transmittance of above 50% based on the resistivity of 2.79 ohm / square transparent conductive properties have good ultraviolet.

【學(xué)位授予單位】：大連理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

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