本文關(guān)鍵詞：不同基底對(duì)退火制備Ni納米島掩模形貌的影響　出處：《功能材料》2017年09期 　論文類型：期刊論文

  更多相關(guān)文章： GaN 退火 Ni納米島 制備

【摘要】：目前,刻蝕自組裝在GaN薄膜上Ni納米島的掩模的方法是制備GaN納米柱陣列常用手段。但是,這將對(duì)后續(xù)制備出的納米柱產(chǎn)生Ni污染。除此之外,直接將GaN系的材料暴露在高溫下進(jìn)行Ni納米島掩模的制備,會(huì)對(duì)GaN材料表面產(chǎn)生一定的熱腐蝕損傷。因此,以GaN、SiO_2、Al_2O_3和SixNy分別為基底,對(duì)退火自組裝在這4種基底上的Ni納米島形貌進(jìn)行了較為系統(tǒng)的研究。發(fā)現(xiàn)850℃的退火溫度下,Al_2O_3基底上Ni薄膜形成的納米島的形貌最為規(guī)整,為最優(yōu)化襯底。
[Abstract]:At present, the method of etching the mask of Ni nanoisland on GaN thin film is a common method to fabricate GaN nano-column array. However, this will cause Ni pollution to the subsequent prepared nano-columns. Direct exposure of GaN system materials to the preparation of Ni nano-island masks at high temperature will cause some hot corrosion damage on the surface of GaN materials. Al_2O_3 and SixNy were used as substrates respectively. The morphology of Ni nanoisland on the four kinds of substrates was studied systematically. It was found that the morphology of Ni nanoislands was annealed at 850 鈩，

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