發(fā)布時間：2018-06-22 19:01

  本文選題：累積因子 + MCNP　； 參考：《輻射防護》2017年03期

【摘要】：使用蒙特卡羅程序MCNP計算了常用材料下的吸收劑量累積因子,計算時采用了較新的截面數(shù)據(jù)庫MCPLIB04及介質(zhì)材料的衰減參數(shù)數(shù)據(jù)庫,并考慮了軔致輻射和相干散射等物理過程,同時將計算結(jié)果與相關(guān)文獻給出的數(shù)據(jù)進行了比較,分析了造成差異的主要原因。結(jié)果表明:利用MCNP計算出的低Z材料的吸收劑量累積因子值在入射光子的中能區(qū)部分,平均比文獻給出的數(shù)據(jù)偏小,在高能區(qū)部分平均比其偏大;而利用MCNP計算出的高Z材料的吸收劑量累積因子則普遍比文獻給出的數(shù)據(jù)偏大。本文工作可為更新目前使用的較為陳舊的累積因子數(shù)據(jù)庫提供參考。
[Abstract]:Monte Carlo program MCNP is used to calculate the absorption dose accumulation factor in common materials. A new cross section database, MCPLIB04, and the attenuation parameter database of dielectric materials are used, and the physical processes such as Bremsstrahlung and coherent scattering are considered. At the same time, the calculation results are compared with the data given in related literature, and the main reasons for the difference are analyzed. The results show that the accumulative factor value of absorbed dose of low Z material calculated by MCNP is smaller than that in the middle energy region of incident photon and larger than that in high energy region. However, the accumulative factor of absorbed dose calculated by MCNP for high Z material is generally larger than that given in literature. This work can provide a reference for updating the old cumulative factor database.
【作者單位】： 中國輻射防護研究院保健物理研究所劑量學(xué)研究室;清華大學(xué)工程物理系粒子技術(shù)與輻射成像教育部重點實驗室高能輻射成像重點學(xué)科實驗室;
【基金】：國家自然科學(xué)基金資助項目(項目編號:11305146、11275174)
【分類號】：TL752
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本文編號：2053893