【摘要】：隨著無(wú)線通信的不斷發(fā)展,對(duì)射頻器件小型化、低功耗、高性能的需求逐步增長(zhǎng),RF MEMS開(kāi)關(guān)憑借其體積小、功耗低、隔離度高以及插損低等優(yōu)異特性具有替代傳統(tǒng)PIN開(kāi)關(guān)和FET開(kāi)關(guān)的潛力,可在移相器、相控雷達(dá)和衛(wèi)星導(dǎo)航等無(wú)線通訊領(lǐng)域廣泛應(yīng)用。本文分析了MEMS開(kāi)關(guān)的機(jī)電與射頻性能參數(shù),并對(duì)其進(jìn)行實(shí)驗(yàn)驗(yàn)證不同實(shí)驗(yàn)條件對(duì)性能參數(shù)的影響。研究分析了接觸式開(kāi)關(guān)的可靠性問(wèn)題,設(shè)計(jì)了一種RF MEMS開(kāi)關(guān)可靠性測(cè)試系統(tǒng)。設(shè)計(jì)了多層固支梁結(jié)構(gòu)的接觸式并聯(lián)開(kāi)關(guān),并對(duì)開(kāi)關(guān)進(jìn)行了加工制作和測(cè)試分析。論文的主要內(nèi)容如下:(1)對(duì)接觸式開(kāi)關(guān)的機(jī)電特性進(jìn)行了研究,分析推導(dǎo)了開(kāi)關(guān)彈性系數(shù)、驅(qū)動(dòng)電壓以及開(kāi)關(guān)速度等性能參數(shù),通過(guò)實(shí)驗(yàn)測(cè)試驗(yàn)證了驅(qū)動(dòng)電壓對(duì)接觸電阻的影響以及傳輸功率對(duì)開(kāi)關(guān)速度的影響;建立了并聯(lián)接觸式開(kāi)關(guān)的電磁模型,根據(jù)模型提取了RLC參數(shù),推導(dǎo)了開(kāi)關(guān)在up態(tài)插損和down態(tài)隔離度的計(jì)算公式,并通過(guò)測(cè)試實(shí)驗(yàn)驗(yàn)證了其正確性,測(cè)試分析了驅(qū)動(dòng)電壓對(duì)開(kāi)關(guān)S參數(shù)的影響。(2)分析了在于接觸式開(kāi)關(guān)中接觸電阻和功率對(duì)開(kāi)關(guān)可靠性的影響,設(shè)計(jì)了一種RF MEMS開(kāi)關(guān)可靠性測(cè)試系統(tǒng),通過(guò)所設(shè)計(jì)的測(cè)試系統(tǒng)對(duì)開(kāi)關(guān)進(jìn)行壽命測(cè)試實(shí)驗(yàn),驗(yàn)證了接觸損傷引起的開(kāi)關(guān)失效,對(duì)開(kāi)關(guān)的功率容量進(jìn)行了實(shí)驗(yàn)測(cè)試,驗(yàn)證了大功率對(duì)開(kāi)關(guān)傳輸?shù)挠绊憽?3)設(shè)計(jì)了多層固支梁結(jié)構(gòu)的并聯(lián)接觸式開(kāi)關(guān)。通過(guò)對(duì)開(kāi)關(guān)的機(jī)電與射頻仿真確定了開(kāi)關(guān)的結(jié)構(gòu)參數(shù),仿真分析了梁的開(kāi)孔對(duì)開(kāi)關(guān)驅(qū)動(dòng)電壓的影響,以及開(kāi)關(guān)結(jié)構(gòu)對(duì)可靠性的影響。仿真結(jié)果表明開(kāi)關(guān)在GHz03~2頻率范圍內(nèi)插入損耗優(yōu)于260.-d B,回波損耗優(yōu)于-d B.21 5,隔離度優(yōu)于-26dB,開(kāi)關(guān)的驅(qū)動(dòng)電壓為V40,開(kāi)關(guān)時(shí)間約為μs21;基于表面微細(xì)加工工藝對(duì)開(kāi)關(guān)進(jìn)行了流片,對(duì)開(kāi)關(guān)進(jìn)行了直流測(cè)試,分析其失效原理,提出了改進(jìn)方法。
[Abstract]:With the continuous development of wireless communication, the demand for the miniaturization, low power consumption and high performance of RF devices has gradually increased with the small size and low power consumption of RF MEMS switches. The excellent characteristics of high isolation and low insertion loss have the potential to replace the traditional PIN switch and FET switch, and can be widely used in the field of phase shifter, phase-controlled radar and satellite navigation. In this paper, the electromechanical and RF performance parameters of MEMS switches are analyzed, and the effects of different experimental conditions on the performance parameters are verified by experiments. The reliability of contact switch is analyzed and a reliability test system of RF MEMS switch is designed. The contact parallel switch with multi-layer fixed beam structure is designed, and the switch is fabricated and tested. The main contents of this paper are as follows: (1) the mechanical and electrical characteristics of contact switch are studied, and the performance parameters such as elastic coefficient, driving voltage and switching speed are analyzed and deduced. The effect of driving voltage on contact resistance and the influence of transmission power on switch speed are verified by experimental tests. The electromagnetic model of parallel contact switch is established, and the RLC parameters are extracted according to the model. The formulas for calculating the insertion loss of the switch in up state and the isolation degree of the down state are derived, and the correctness of the formula is verified by the test results. The influence of driving voltage on switch S parameters is analyzed. (2) the influence of contact resistance and power on the reliability of switch is analyzed, and a reliability test system of RF MEMS switch is designed. Through the test system designed to test the life of the switch, the failure of the switch caused by contact damage is verified, and the power capacity of the switch is tested experimentally. The effect of high power on switch transmission is verified. (3) parallel contact switch with multi-layer fixed beam structure is designed. The structural parameters of the switch are determined by the electromechanical and RF simulation of the switch. The effect of the opening of the beam on the driving voltage of the switch and the influence of the structure of the switch on the reliability are simulated and analyzed. The simulation results show that the insertion loss in the GHz03~2 frequency range is better than 260.-dB, the echo loss is better than -dB.21.5, the isolation degree is better than -26dB, the driving voltage of the switch is V40, the switching time is about 渭 s 21. The DC test of the switch is carried out, the failure principle is analyzed, and the improved method is put forward.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TH-39

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本文編號(hào)：2204992