本文選題：MEMS + 慣性器件��； 參考：《中國(guó)慣性技術(shù)學(xué)報(bào)》2017年03期

【摘要】：基于MEMS器件的微型慣導(dǎo)系統(tǒng)的精度和MEMS慣性器件的全溫穩(wěn)定性具有很高的相關(guān)性。MEMS結(jié)構(gòu)相關(guān)的溫度漂移主要來(lái)自材料之間的熱失配應(yīng)力,工藝引入的應(yīng)力,以及封裝應(yīng)力等。而相關(guān)應(yīng)力在MEMS結(jié)構(gòu)中的分布以及所造成的應(yīng)變又和MEMS結(jié)構(gòu)具有一定相關(guān)性。通過(guò)ANSYS有限元分析軟件建立了多種MEMS慣性器件常用梁-質(zhì)量塊結(jié)構(gòu)的FEM模型,具體包括懸臂梁結(jié)構(gòu)、雙端固支梁結(jié)構(gòu)、L形梁結(jié)構(gòu)、對(duì)角支撐梁結(jié)構(gòu)。通過(guò)熱-力耦合仿真,研究了熱失配應(yīng)力在上述結(jié)構(gòu)中的分布以及所產(chǎn)生的結(jié)構(gòu)變形。對(duì)比分析了不同芯片粘膠形式,包括中心粘膠、三點(diǎn)粘膠、整片粘膠對(duì)上述MEMS結(jié)構(gòu)引入的封裝應(yīng)力以及其全溫(-40℃~60℃)溫度漂移特性。此外,還分析研究了不同襯底厚度對(duì)MEMS結(jié)構(gòu)封裝應(yīng)力的隔離效果。
[Abstract]:The precision of micro inertial navigation system based on MEMS device and the whole temperature stability of MEMS inertial device are highly correlated. The temperature drift related to MEMS structure mainly comes from the thermal mismatch stress between materials, the stress introduced by technology, and the encapsulation stress and so on. The distribution of the relative stress in the MEMS structure and the strain caused by it are related to the MEMS structure. By means of ANSYS finite element analysis software, the FEM models of the beam-mass block structures commonly used in MEMS inertial devices are established, including cantilever beam structure, double end clamped beam structure and L-shaped beam structure, diagonally supported beam structure. The distribution of thermal mismatch stress in the above structures and the resulting structural deformation are studied by thermal-mechanical coupling simulation. The packaging stress induced by different chip viscose forms, including central viscose, three-point viscose, whole piece viscose on the MEMS structure, and the temperature drift characteristics of the whole chip were analyzed in this paper, including central viscose, three-point viscose, and the whole chip viscose at 60 鈩，

本文編號(hào)：1776506