采用化學(xué)溶液法在Pt/Ti/SiO₂/Si襯底上生長了Zn_xNi_（1-x）Mn₂O₄（ZNMO,x=0,0.05,0.1,0.15,0.2,0.25）尖晶石氧化物薄膜。X射線衍射（XRD）與場發(fā)射掃描電子顯微鏡（FESEM）分析結(jié)果表明,Zn的摻雜濃度對ZNMO薄膜的結(jié)晶性和微結(jié)構(gòu)有明顯影響。用橢圓偏振光譜儀測量分析了ZNMO薄膜在300-1 100 nm波段的光學(xué)常數(shù),并討論了Zn摻雜對折射率n和消光系數(shù)k的影響。在薄膜的拉曼光譜中觀測到兩個峰A1 g與F2g,A1 g模式的相對峰位隨著Zn的摻雜濃度x的增大而減小。由于晶格應(yīng)變與晶格失配,拉曼峰峰位隨Zn摻雜濃度的變化而輕微移動。 

【文章來源】：紅外與毫米波學(xué)報. 2016,35(06)北大核心

【文章頁數(shù)】：5 頁

【部分圖文】：

ZNMO(x=0，0．05，0．1，0．15，0．2，0．25)薄膜的XＲD

-(f)分別為當x=0，0．05，0．1，0．15，0．2，0．25，入

6期WANGWan-Shengetal:ThestructuralandopticalpropertiesofZnxNi(1-x)Mn2O4filmsgrownonPt/Ti/SiO2/Sisubstrate(x=0，0．05，0．1，0．15，0．2，0．25)filmsareshowninFig．4．Fig．4TheＲefractiveindexnandextinctioncoefficientκoftheZNMO(x=0，0．05，0．1，0．15，0．2，0．25)films圖4ZNMO(x=0，0．05，0．1，0．15，0．2，0．25)薄膜的折射率n與消光系數(shù)κItiswellknownthatcrystallinity，electronicbandstructureandlatticedefectareimportantparameters，whichcaninfluencetheopticalconstants．OwningtoZnsubstituting，theelectronicbandstructureisaffectedandthuscanfurtherinfluencetheopticalresponsesofZNMOfilms［14，24］．AsshowninFig．4，therefractiveindexnincreaseswithincreasingZnconcentrationfrom0．05to0．25inthewavelengthrangeof300～440nm．Besidestheeffectofelectronicband，crystallinityisalsoacrucialparameter．ThatiswhytherefractiveindexofNiMn2O4(x=0)isthelargestamongallthesamplesinthewave-lengthrangeof510～1100nm［25-26］．Thethicknessesofthefilmsalsomakeadifferenceintherefractivein-dex［27］．AllthefactorsmentionedaboveresultinthattherefractiveindexchangeserraticallywithincreasingZnconcentrationinthewavelengthrangeof300-1100nm．Fortheextinctioncoefficientκ，thepeaksincurvesofthesamples(x=0，0．05，0．1，0．15and0．2)indicatestrongopticalabsorption，whichmightberesultedfromelectronictransition．Thevaluesofpeak


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