【摘要】：具有條紋磁疇結構的磁性薄膜表現出面內轉動磁各向異性,對于解決高頻電子器件的方向性問題起著至關重要的作用.本文采用射頻磁控濺射的方法,研究了NiFe薄膜的厚度、濺射功率密度、濺射氣壓等制備工藝參數對條紋磁疇結構、面內靜態(tài)磁各向異性、面內轉動磁各向異性、垂直磁各向異性的影響規(guī)律.研究發(fā)現,在功率密度15.6 W/cm~2與濺射氣壓2 mTorr(1 Torr=1.33322×102Pa)下生長的NiFe薄膜,表現出條紋磁疇的臨界厚度在250 nm到300 nm之間.厚度為300 nm的薄膜比250 nm薄膜的垂直磁各向異性場增大近一倍,從而磁矩偏離膜面形成條紋磁疇結構,并表現出面內轉動磁各向異性.高濺射功率密度可以降低薄膜出現條紋磁疇的臨界厚度.在相同功率密度15.6 W/cm~2下生長300 nm的NiFe薄膜,隨著濺射氣壓由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向異性場逐漸由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面內轉動磁各向異性場由72.5 Oe增大到141.9 Oe,條紋磁疇周期從0.53μm單調減小到0.24μm.NiFe薄膜的斷面結構表明柱狀晶的形成是表現出條紋磁疇結構的本質原因,高功率密度下低濺射氣壓有利于柱狀晶結構的形成,表現出規(guī)整的條紋磁疇結構,高濺射氣壓會導致柱狀晶纖細化,面內轉動磁各向異性與面外垂直磁各向異性增強,條紋磁疇結構變得混亂.
[Abstract]:The magnetic thin films with striped magnetic domain structure exhibit in-plane rotational magnetic anisotropy, which plays an important role in solving the directivity problem of high frequency electronic devices. In this paper, the preparation parameters of NiFe thin films, such as thickness, sputter power density and sputter pressure, have been studied by RF magnetron sputter, such as stripe magnetic domain structure, in-plane static magnetic anisotropy, in-plane rotational magnetic anisotropy, etc. The influence of vertical magnetic anisotropy. It is found that the critical thickness of stripe domain in NiFe thin films grown at power density of 15.6 W/cm~2 and sputter pressure of 2 mTorr (1 Torr=1.33322 脳 102Pa) is between 250 nm and 300 nm. The vertical magnetic anisotropy field of 300 nm thin films is nearly twice as large as that of 250 nm thin films, so that the magnetic moment deviates from the film surface to form a striped magnetic domain structure and shows in-plane rotational magnetic anisotropy. High sputter power density can reduce the critical thickness of stripe magnetic domain in thin films. 300 nm NiFe thin films were grown at the same power density of 15.6 W/cm~2. The vertical magnetic anisotropy field of the films increased from 1247.8 Oe (1 Oe=79.5775 A 鈮，

本文編號：2493745