發(fā)布時間：2019-01-19 17:39

【摘要】：基于薄膜元件的熱力學(xué)理論,建立了強激光連續(xù)輻照下薄膜元件的熱分析模型,模擬了薄膜元件表面雜質(zhì)吸熱后向周圍薄膜進行熱傳遞的過程,并討論了表面潔凈度等級和雜質(zhì)尺寸對薄膜元件熱應(yīng)力損傷的影響。研究結(jié)果表明:強激光連續(xù)輻照下,表面雜質(zhì)會吸收激光能量產(chǎn)生較大的溫升,激光輻照時間越長,功率密度越大,雜質(zhì)的溫升也越大;吸熱后,達到熔點的雜質(zhì)和未達到熔點的雜質(zhì)分別通過熱傳導(dǎo)和熱輻射的方式向周圍薄膜傳遞熱量,通過熱傳導(dǎo)作用在薄膜元件表面引起的溫升明顯高于熱輻射作用引起的;雜質(zhì)向周圍薄膜傳遞熱量后會在薄膜元件上產(chǎn)生非均勻的溫度梯度,進而產(chǎn)生熱應(yīng)力,熱應(yīng)力隨著溫度梯度的增加而增大,且處于一定尺寸范圍內(nèi)的雜質(zhì),更容易誘導(dǎo)薄膜元件熱應(yīng)力損傷;此外,薄膜元件的表面潔凈度等級越高,雜質(zhì)粒子的數(shù)目越多,越易于造成薄膜元件的熱應(yīng)力損傷。
[Abstract]:Based on the thermodynamics theory of thin film element, the thermal analysis model of film element under continuous intense laser irradiation is established, and the process of heat transfer from impurities on the surface of film element to the surrounding film is simulated. The effects of surface cleanliness and impurity size on thermal stress damage of thin film elements are discussed. The results show that the surface impurities absorb the laser energy to produce a larger temperature rise under continuous intense laser irradiation. The longer the laser irradiation time, the greater the power density, and the greater the temperature rise of the impurity. After heat absorption, the impurities reaching the melting point and the impurities that do not reach the melting point transfer heat to the surrounding film by heat conduction and heat radiation, respectively. The temperature rise caused by the heat conduction on the surface of the film is obviously higher than that caused by the thermal radiation. When the impurity transfers heat to the surrounding film, it will produce a non-uniform temperature gradient on the film element, and then produce the thermal stress. The thermal stress increases with the increase of the temperature gradient, and the impurity is in a certain size range. It is easier to induce thermal stress damage of thin film elements. In addition, the higher the level of surface cleanliness of thin film elements, the more the number of impurity particles, the easier to cause thermal stress damage of thin film elements.
【作者單位】： 四川大學(xué)電子信息學(xué)院;
【基金】：蘇州大學(xué)省級重點實驗室開放課題(KSJ1404) 科技部創(chuàng)新人才推進計劃重點領(lǐng)域創(chuàng)新團隊(2014RA4051)
【分類號】：O484

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