【摘要】：本文為改善反向外延生長(zhǎng)3C-SiC薄膜中殘余應(yīng)力的工藝優(yōu)化方法,采用LPCVD技術(shù),將甲烷和氫氣按1∶10比例混合后與n-Si(111)襯底反應(yīng),制備3C-SiC薄膜。通過(guò)X射線衍射分析儀、激光拉曼光譜儀和場(chǎng)發(fā)射掃描電子顯微鏡進(jìn)行測(cè)試和分析。在該方法中,反應(yīng)恒溫1200℃為最優(yōu)溫度,反應(yīng)溫度過(guò)高或過(guò)低都不利于3C-SiC薄膜生長(zhǎng);在反應(yīng)溫度為1200℃時(shí),為增加薄膜厚度而單純?cè)黾臃磻?yīng)時(shí)長(zhǎng),缺陷濃度也會(huì)相應(yīng)地增加,從而薄膜結(jié)晶質(zhì)量相應(yīng)降低;但在1250℃反應(yīng)溫度時(shí),增加反應(yīng)時(shí)長(zhǎng)不僅會(huì)增加薄膜的厚度,而且也會(huì)緩減薄膜中殘余應(yīng)力,同時(shí)改善薄膜的結(jié)晶質(zhì)量。另外研究結(jié)果還表明:1250℃時(shí)經(jīng)過(guò)一個(gè)恒溫的等時(shí)退火工藝后,再降溫的方式可進(jìn)一步降低薄膜中本征殘余應(yīng)力,從而改善薄膜的結(jié)晶質(zhì)量和晶格失配。
[Abstract]:In order to improve the process optimization of residual stress in 3C-SiC thin films grown by reverse epitaxy, 3C-SiC thin films were prepared by LPCVD technique. Methane and hydrogen were mixed at 1:10 and reacted with n-Si (111) substrates. X-ray diffraction analyzer, laser Raman spectrometer and field emission scanning electron microscope were used to test and analyze. In this method, the optimal reaction temperature is 1200 鈩，

本文編號(hào)：2344587