【摘要】：以SiC陶瓷靶為靶材,Ar和CHF_3為源氣體,采用反應(yīng)磁控濺射法在雙面拋光的316L不銹鋼基片上制備出了系列Si和F共摻雜的DLC∶F∶Si薄膜。研究了射頻輸入功率對(duì)薄膜的附著力、硬度和表面接觸角的影響。結(jié)果表明,選取適當(dāng)?shù)妮斎牍β?180W左右)可以制備出附著力達(dá)11N的DLC∶F∶Si薄膜。通過(guò)拉曼和紅外光譜分析以及樣品粗糙度分析,作者提出了輸入功率對(duì)DLC∶F∶Si薄膜結(jié)構(gòu)和特性調(diào)制的機(jī)理,即輸入功率直接影響SiC靶的濺射產(chǎn)額、空間Ar~+的能量以及CHF_3的分解程度,繼而影響空間Si、C、-CF、-CF_2,特別是F~*等基團(tuán)的能量和濃度,調(diào)制薄膜中F含量以及Si-C鍵含量和C網(wǎng)絡(luò)的關(guān)聯(lián)度。Si-C、C=C鍵的增加有助于薄膜附著力的明顯改善,F含量的減少則會(huì)導(dǎo)致薄膜的疏水性能有所下降。
[Abstract]:A series of Si and F co-doped DLC:F:Si films were prepared on a double-side polished 316L stainless steel substrate by reactive magnetron sputtering using SiC ceramic target as targets, ar and CHF_3 as source gases. The influence of RF input power on adhesion, hardness and surface contact angle was studied. The results show that DLC:F:Si films with adhesion up to 11 N can be prepared with proper input power (about 180W). Based on Raman and infrared spectroscopy and sample roughness analysis, the author proposed the modulation mechanism of input power on the structure and characteristics of DLC:F:Si film, that is, the input power directly affects the sputtering yield of SiC target. The energy of the space Ar~ and the degree of decomposition of CHF_3, in turn, affect the energy and concentration of the space Si-C ~ (-CFN) -CFS _ (2), especially the groups such as FG *, and so on. The increase of F content and Si-C bond content in the modulation film and the correlation degree of C network. The increase of C bond can improve the adhesion of the film obviously. The decrease of F content will lead to the decrease of the hydrophobicity of the film.
【作者單位】： 蘇州大學(xué)物理與光電能源學(xué)部;
【基金】：國(guó)家自然基金資助項(xiàng)目(11275136)
【分類(lèi)號(hào)】：TB383.2

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本文編號(hào)：2146568