本文選題：薄膜 + 原子層沉積�。� 參考：《激光與光電子學(xué)進(jìn)展》2017年11期

【摘要】：采用原子層沉積技術(shù),以Al(CH3)3為鋁的前驅(qū)體,分別以TiCl4和四(二甲基氨基)鈦(TDMAT)為鈦的前驅(qū)體制備了兩種TiAlC薄膜,并對(duì)比分析了它們的薄膜性能。結(jié)果表明,這兩種薄膜均存在不同程度的自然氧化;以TDMAT為前驅(qū)體制備的膜層的光學(xué)帶隙有兩個(gè)值,分別是0.68eV和2.00eV,而以TiCl4為前驅(qū)體制備的薄膜的光學(xué)帶隙為0.61eV,前者的平均透射率、沉積速率、電阻率及表面粗糙度均高于后者的,但前者的厚度均勻性較差;以TiCl4為前驅(qū)體制備的薄膜為無定形結(jié)構(gòu),而在以TDMAT為前驅(qū)體制備的薄膜中出現(xiàn)了TiN晶體;相對(duì)于有機(jī)化合物TDMAT而言,無機(jī)化合物TiCl4更適合作為制備TiAlC柵介質(zhì)材料的前驅(qū)體。
[Abstract]:Two kinds of TiAlC thin films were prepared by atomic layer deposition with Al (Ch _ 3) _ 3 as precursor and TiCl _ 4 and TDMAT as precursors, respectively, and their properties were compared and analyzed. The results show that the two kinds of films have different degrees of natural oxidation, and the optical band gap of the films prepared with TDMAT as precursor has two values. The average transmittance, deposition rate, resistivity and surface roughness of the thin films prepared with TiCl _ 4 as precursor were 0.68eV and 2.00eV, respectively, but the thickness uniformity of the former was lower than that of the latter, but the average transmittance, deposition rate, resistivity and surface roughness of the former were higher than those of the latter. The films prepared with TiCl4 as precursor have amorphous structure, but tin crystals appear in the films prepared by TDMAT. Compared with organic compound TDMAT, inorganic compound TiCl4 is more suitable as precursor for preparing TiAlC gate dielectric materials.
【作者單位】： 凱里學(xué)院物理與電子工程學(xué)院;
【基金】：貴州省“125計(jì)劃”重大科技專項(xiàng)(黔教合重大專項(xiàng)字[2014]037號(hào)) 貴州省科學(xué)技術(shù)基金(黔科合J字[2014]2148號(hào)) 貴州省科技合作計(jì)劃(黔科合LH字[2015]7743號(hào)) 貴州省2016年省級(jí)本科教學(xué)工程項(xiàng)目(20161114020)
【分類號(hào)】：O484

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