本文選題：氮化硅 + 不銹鋼��； 參考：《中北大學》2017年碩士論文

【摘要】：在金屬薄膜傳感器中,常采用介質(zhì)層薄膜使金屬基底與敏感元件之間絕緣,保護敏感元件不受外界環(huán)境污染以確保測量過程中的精確穩(wěn)定性。氮化硅因其具有高的抗拉強度、硬度及比電阻,較高的介電常數(shù)和優(yōu)良的絕緣性等機械、電學性能而在微機械與微電子領(lǐng)域和材料改性領(lǐng)域備受關(guān)注。國內(nèi)外對氮化硅薄膜的制備工藝及結(jié)構(gòu)等均有大量研究,但是有關(guān)沉積參數(shù)對沉積速率、薄膜均勻度、薄膜粗糙度的影響和沉積參數(shù)與退火熱處理對薄膜結(jié)構(gòu)的影響等方面的系統(tǒng)研究尚有不足,并且針對氮化硅薄膜在金屬基底上的制備的研究少之又少。本文結(jié)合金屬基底探究氮化硅薄膜的制備工藝,為以后金屬薄膜傳感器的制備奠定了堅實的工藝基礎(chǔ),具有重要的現(xiàn)實意義。以不銹鋼作為基底材料,采用射頻磁控反應濺射法,分別基于單晶硅靶材和氮化硅靶材沉積出用于金屬薄膜傳感器絕緣層和保護層的氮化硅薄膜,采用多種測量設(shè)備對所制備樣品的薄膜厚度、表面粗糙度、表面形貌、組成成分、晶體結(jié)構(gòu)和薄膜硬度等進行分析檢測�；趩尉Ч璋胁脑O(shè)計單因素試驗法探究了濺射功率、工作壓強、氣體流量比和基底溫度對沉積速率、表面均勻度和表面粗糙度三個薄膜質(zhì)量特性的影響規(guī)律;基于氮化硅靶材探究了濺射功率、工作壓強、氮氣流量對薄膜質(zhì)量特性的影響規(guī)律;重點針對單晶硅靶材制備薄膜時的沉積參數(shù)設(shè)計正交試驗,通過極差和方差分析,研究得出了四個沉積參數(shù)對薄膜質(zhì)量特性的影響程度和顯著性結(jié)果,并通過正交試驗獲得的測量值,分別建立了沉積速率、薄膜均勻度和表面粗糙度三個經(jīng)驗模型公式。研究結(jié)果表明,對不同沉積參數(shù)條件下的薄膜進行表面形貌變化的分析,得出濺射功率在100W~120W范圍內(nèi)表面缺陷較少、質(zhì)量最好,基底溫度在200℃左右時薄膜質(zhì)量平整致密,薄膜硬度為1532.6HV;隨著氮氣流量的增大薄膜的硬度先升高再降低,氮氣流量在15sccm時硬度最大是1240.3HV;通過XRD圖譜和EDS電子能譜分析得知,制備的薄膜為非晶結(jié)構(gòu)的富硅氮化硅,而當退火溫度不高于1000℃時,晶體結(jié)構(gòu)幾乎不發(fā)生變化。
[Abstract]:In the metal thin film sensor, the dielectric film is often used to insulate the metal substrate from the sensitive element, to protect the sensitive element from the environmental pollution and to ensure the accurate stability of the measurement process. Silicon nitride has attracted much attention in the field of micromechanics and microelectronics and material modification because of its high tensile strength, hardness and specific resistance, high dielectric constant and excellent electrical properties. The preparation process and structure of silicon nitride films have been studied extensively at home and abroad, but the deposition parameters are related to deposition rate, film uniformity, and so on. The influence of film roughness and the effect of deposition parameters and annealing heat treatment on the structure of the films are still insufficient, and the preparation of silicon nitride thin films on metal substrates is rare. In this paper, the preparation process of silicon nitride thin film is studied based on metal substrate, which lays a solid technological foundation for the preparation of metal film sensor in the future, and has important practical significance. Using stainless steel as substrate, silicon nitride films were deposited on the basis of monocrystalline silicon targets and silicon nitride targets by radio frequency magnetron reactive sputtering, respectively. The film thickness, surface roughness, surface morphology, composition, crystal structure and film hardness of the samples were analyzed and measured by various measuring devices. The effects of sputtering power, working pressure, gas flow ratio and substrate temperature on the deposition rate, surface uniformity and surface roughness of monocrystalline silicon target were investigated. Based on silicon nitride target, the effects of sputtering power, working pressure and nitrogen flow rate on the film quality were investigated, and the orthogonal test was designed for the deposition parameters of monocrystalline silicon target, and the analysis of range and variance was used to study the effect of sputtering power, working pressure and nitrogen flow rate on the film quality. The influence and significance of four deposition parameters on the film quality characteristics were obtained. Three empirical models of deposition rate, film uniformity and surface roughness were established through the measured values obtained by orthogonal test. The results show that the surface morphology of the films with different deposition parameters is analyzed. The results show that the surface defects are less and the quality is the best in the sputtering power range of 100W ~ 120W, and the film mass is flat and compact at the substrate temperature of about 200 鈩，

本文編號：2104302