發(fā)布時間：2018-06-27 07:08

  本文選題：透明導(dǎo)電薄膜 + 溶膠凝膠法��； 參考：《中國科技論文》2016年17期

【摘要】：為了降低溶膠凝膠法制備透明導(dǎo)電薄膜的熱退火溫度,將溶膠-凝膠法與深紫外激光處理相結(jié)合,在石英玻璃襯底上制備了非晶銦鋅氧(InZnO、IZO)透明導(dǎo)電薄膜。通過X射線衍射、紫外-可見光吸收光譜、霍爾效應(yīng)測試以及紅外光譜等測試手段,分析了激光輻照前后,薄膜的微觀結(jié)構(gòu)、光電性質(zhì)以及材料中有機物共價鍵的變化情況。結(jié)果表明:248nm深紫外激光輻照并未改變薄膜的非晶結(jié)構(gòu),但薄膜的電學(xué)性能得到明顯的提升,這歸因于高能光子能有效去除因低溫退火而殘留在薄膜中的有機成分,并降低薄膜表面吸附氧的濃度,從而提高薄膜中載流子濃度和遷移率;最后,在250℃的退火溫度下得到了光電性能良好的非晶IZO透明導(dǎo)電薄膜(電阻率為2.01×10~(-2)Ω·cm,在550nm處透過率為92.7%)。
[Abstract]:In order to reduce the thermal annealing temperature of transparent conductive thin films prepared by sol-gel method, amorphous indium zinc oxide (InZnOZO) transparent conductive thin films were prepared on quartz glass substrates by combining sol-gel method with deep ultraviolet laser treatment. By means of X-ray diffraction, UV-Vis absorption spectrum, Hall effect measurement and infrared spectroscopy, the microstructure, photoelectric properties and covalent bonds of organic compounds in the films were analyzed before and after laser irradiation. The results show that the amorphous structure of the films has not been changed by the irradiation of w 248nm deep ultraviolet laser, but the electrical properties of the films have been obviously improved, which is attributed to the high energy photons being able to effectively remove the organic components remaining in the films due to low temperature annealing. At the annealing temperature of 250 鈩，

本文編號：2073102