本文選題：透紅外材料 + 薄膜電池�。� 參考：《長春理工大學》2014年碩士論文

【摘要】：ZnSe理化性質(zhì)決定了其在半導體領(lǐng)域的廣泛應(yīng)用,而將ZnSe制備成薄膜應(yīng)用在透紅外材料,太陽能薄膜電池上是本研究的重點,要求制備出的ZnSe薄膜均勻,努力使Zn/Se達到1：1,紅外透過的比率達到較高水平,各種性質(zhì)穩(wěn)定。ZnSe薄膜的制備有很多種手段,如MBE、CVD、PLD等,本實驗采用電化學沉積方法(ECD),恒電流條件下,在基質(zhì)上沉積出ZnSe薄膜,探究分別改變電沉積液鋅離子和硒酸根離子濃度比pH,轉(zhuǎn)速等對ZnSe沉積的影響。研究表明,在Zn+/SeO32(?)濃度比為100：1,電流密度0.0004A/dm2,溫度為45℃,pH=3,轉(zhuǎn)速為800r/min,沉積時間2h時所制備的薄膜沉積層效果最好。
[Abstract]:ZnSe is widely used in semiconductor field due to its physical and chemical properties. ZnSe thin film is used in infrared transmission material. Solar thin film cell is the focus of this study, and the ZnSe thin film is required to be uniform. We try to make ZnSe reach 1: 1, the infrared transmittance ratio reaches a higher level, and there are many methods for the preparation of stable ZnSe thin films, such as MBE / CVDX PLD, etc. In this experiment, ZnSe thin films were deposited on the substrate at constant current by electrochemical deposition method. The effects of the concentration ratio of zinc ion and selenate ion on the deposition of ZnSe were studied. The study shows that in Zn / Seo _ 32) When the concentration ratio is 100: 1, the current density is 0.0004A / dm2, the temperature is 45 鈩，

本文編號：2000580