本文選題：熱致變色 + 薄膜�。� 參考：《南京理工大學》2014年碩士論文

【摘要】：隨著微小航天器的發(fā)展,其對器件輕量化的要求越來越高,傳統(tǒng)的MEMS百葉窗等熱控器件因其體積大、質(zhì)量重、結(jié)構(gòu)復雜等特點而難以應用于微小衛(wèi)星。鈣鈦礦錳氧化物是一種熱致變色可變發(fā)射率材料,可以根據(jù)自身的溫度水平,自動調(diào)節(jié)輻射特性,起到主動智能控溫的作用,在航天領域有很大應用前景。 本文采用磁控濺射法在摻億氧化鋯(YSZ)單晶基片、硅(Si)單晶基片和石英玻璃表面制備鈣鈦礦錳氧化物La1-xAxMno3(A=Ca, Sr)熱致變色薄膜,濺射過程中調(diào)節(jié)濺射氣壓、氧分壓、濺射時間等參數(shù),分析薄膜材料的組份、基片和濺射條件等因素對薄膜沉積速率的影響。 采用X射線衍射儀(XRD)、掃描電子顯微鏡(SEM)、原子力顯微鏡(AFM)、和能譜儀(EDS)對樣品的晶體結(jié)構(gòu)、表面形貌、粗糙度、元素組成等物性進行測量,分析基片、濺射條件和薄膜材料組份對樣品上述物性的影響。XRD分析結(jié)果顯示在YSZ、Si基片和石英玻璃表面濺射的薄膜樣品都是單相鈣鈦礦結(jié)構(gòu),SEM測量顯示：當薄膜厚度較小時,表面光滑、平整、致密；當厚度較大時,表面出現(xiàn)凹槽和粘附的顆粒,粗糙度變大。AFM的測量結(jié)果與SEM測量結(jié)果吻合。 使用傅里葉紅外光譜儀在不同溫度下測量薄膜樣品的光譜反射率,進行積分計算獲得薄膜樣品在不同溫度下的發(fā)射率,分析基片、濺射條件和薄膜材料組份等因素對樣品發(fā)射率的影響。結(jié)果表明, YSZ和Si單晶基片上的薄膜樣品,氧分壓和濺射壓力對發(fā)射率變化有影響；當膜厚低于“集膚深度"0.9μm時,發(fā)射率幾乎不隨溫度變化,當膜厚高于0.9gm時,發(fā)射率隨溫度升高而增大。YSZ基片上的La0.7Ca0.3MnO3、La0.8Sr0.2MnO3\La0.7Ca0.165Sr0.135MnO3薄膜樣品的發(fā)射率曲線接近,變化范圍較小,La0.7Sr0.3MnO3發(fā)射率變化范圍較大；Si基片上的La0.8Sr0.2MnO3.La0.7Ca0.3MnO3和La0.7Sr0.3MnO3薄膜樣品的發(fā)射率變化范圍依次減小。直接在石英玻璃上沉積La0.7Sr0.3MnO3薄膜樣品的發(fā)射率變化不大。選用Ag或A1作為過渡層,發(fā)射率隨溫度升高而增大,其中選用A1過程層時,發(fā)射率變化范圍隨壓力升高而變大,同溫度下發(fā)射率隨壓力升高而減小。
[Abstract]:With the development of small spacecraft, the requirement of lightweight devices becomes more and more high. Traditional MEMS blinds and other thermal control devices are difficult to be used in micro satellites because of their large volume, heavy mass and complex structure. Perovskite manganese oxide is a thermochromic variable emissivity material which can automatically adjust the radiation characteristics according to its temperature level and play an active and intelligent role in temperature control. In this paper, perovskite manganese oxide La1-xAxMNO _ 3 Aca-CaCa (Sr) thin films were deposited on monocrystalline substrates, silicon monocrystalline substrates and quartz glass by magnetron sputtering. The sputtering pressure, oxygen partial pressure and sputtering time were adjusted during sputtering. The effects of composition, substrate and sputtering conditions on the deposition rate of thin films were analyzed. The crystal structure, surface morphology, roughness and elemental composition of the samples were measured by X-ray diffractometer, scanning electron microscope (SEM), atomic force microscope (AFM) and energy dispersive spectroscopy (EDS). The effect of sputtering conditions and the composition of thin film materials on the above mentioned physical properties. XRD analysis results show that the films sputtering on YSZ Si substrates and quartz glass surfaces are single-phase perovskite structure SEM measurements show that when the film thickness is small, the surface is smooth. When the thickness is larger, the groove and the adhesion particles appear on the surface, and the measurement results of the roughness become larger. The measured results are in good agreement with the results of SEM. The spectral reflectance of thin film samples was measured by Fourier infrared spectrometer at different temperatures. The emissivity of thin film samples at different temperatures was obtained by integral calculation, and the substrate was analyzed. The effects of sputtering conditions and composition of thin films on the emissivity of the samples. The results show that the oxygen partial pressure and sputtering pressure affect the emissivity of the films on YSZ and Si single crystal substrates, and when the film thickness is lower than 0.9 渭 m, the emissivity almost does not change with temperature, and when the film thickness is higher than 0.9gm, the emissivity of the films is higher than that of 0.9gm. The emissivity of La0.7Ca0.3MnO3-La0.8Sr0.2MnO3\ La0.7Ca0.165Sr0.135MnO3 films on YSZ substrates increases with the increase of temperature. The emissivity curve of La0.7Sr0.2MnO3 / La0.7Ca0.165Sr0.135MnO3 films is close to that of La0.7Sr0.3MnO3 films. The range of emissivity of La0.7Sr0.3MnO3 films on Si substrates is larger than that of La0.8Sr0.2MnO3.La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 films on Si substrates. The emissivity of La0.7Sr0.3MnO3 films deposited directly on quartz glass has little change. The emissivity increases with the increase of temperature when Ag or A1 is selected as the transition layer. The range of emissivity increases with the increase of pressure and decreases with the increase of pressure at the same temperature.
【學位授予單位】：南京理工大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TB383.2

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