本文選題：硅納米晶體 + 納米晶體薄膜　； 參考：《浙江大學(xué)》2014年碩士論文

【摘要】：硅納米晶體由于尺寸效應(yīng)因而有著迥異于體硅的光電特性。利用硅納米晶體薄膜成功制備光電器件是研究人員正努力突破的重要方向。另外,利用硅納米晶體制備的三維塊體材料也展現(xiàn)出巨大的應(yīng)用潛力,頗具開發(fā)價值。本文綜合研究了硅納米晶體及其薄膜和三維塊體的結(jié)構(gòu)和性能。 在成膜方面,利用溶液法和全氣相法將冷等離子體法合成的非有意摻雜SiNCs沉積成膜,基于此制備了硅納米晶薄膜晶體管(TFT),所制TFT的載流子遷移率在10-3cm2V-1S-1量級,Ⅰ-Ⅴ曲線表明所制備的TFT是具有場效應(yīng)的,并且證明了非有意摻雜的硅納米晶體為弱n型半導(dǎo)體材料。 將重?fù)搅缀椭負(fù)脚鸬墓杓{米晶體顆粒熱壓,成功制備出了其塊體材料,由于它兼具了重?fù)焦杓{米晶體的特點(diǎn)和塊體的宏觀結(jié)構(gòu),因此其電學(xué)性能十分優(yōu)異。所獲塊體材料的致密度最高可達(dá)98%,電阻率最低可至0.803mΩ·cm,載流子濃度最高達(dá)2.7×1020cm-3。分析發(fā)現(xiàn),最多有大約27%的雜質(zhì)被電學(xué)激活。我們對以上實(shí)驗(yàn)結(jié)果做出了解釋,認(rèn)為高溫下硅納米晶體的粘性流動在其熱壓塊體成型過程中起著至關(guān)重要的作用。硅納米晶體的表面氧化層有助于熱壓燒結(jié)時晶粒的粘性流動,從而促進(jìn)有效的顆粒重排。重?fù)搅椎墓杓{米晶體比重?fù)脚鸬母菀籽趸?因此燒結(jié)時其顆粒重排更為充分,空隙更少,致密度也更大。同時,高溫下硅納米晶體表面的氧化物自身也會產(chǎn)生粘性流動,打破了原來硅納米晶體及其表面氧化物的核殼結(jié)構(gòu),從而使得重?fù)搅椎墓杓{米晶體顆粒直接相互接觸,組成了有效的電學(xué)連接。反觀利用重?fù)脚鸬墓杓{米晶體制備的塊體材料,由于致密度低,空隙多,無法大量形成有效電學(xué)連接,因此載流子傳輸通道少,嚴(yán)重制約了其電導(dǎo)的提升。
[Abstract]:Because of the size effect, silicon nanocrystals have different optoelectronic properties from bulk silicon. The successful fabrication of optoelectronic devices using silicon nanocrystalline thin films is an important direction that researchers are trying to break through. In addition, the three-dimensional bulk materials prepared by silicon nanocrystalline also show great application potential and development value. In this paper, the structure and properties of silicon nanocrystalline and its thin films and three-dimensional bulk are studied. In the aspect of film formation, unintentionally doped SiNCs synthesized by cold plasma method was deposited by solution method and gas phase method. Based on this, silicon nanocrystalline thin film transistors were prepared. The carrier mobility of TFT was in the order of 10-3cm2V-1S-1. The I-V curves show that the prepared TFT has a field effect and that the unintentionally doped silicon nanocrystalline is a weakly n-type semiconductor material. Bulk silicon nanocrystals were prepared by hot-pressing the heavily doped and heavily boron-doped silicon nanocrystals. Because of the characteristics of the heavily doped silicon nanocrystals and the macrostructure of the bulk, the electrical properties of the bulk nanocrystals were excellent. The maximum density of the bulk material is 98, the lowest resistivity is up to 0.803m 惟 cm, and the highest carrier concentration is 2.7 脳 1020cm-3. It was found that at most about 27% of the impurities were electrically activated. We explain the experimental results above and conclude that the viscous flow of silicon nanocrystals at high temperature plays an important role in the process of hot pressing bulk forming. The oxide layer on the surface of silicon nanocrystalline is helpful to the viscous flow of grain during hot pressing and sintering, thus promoting the effective particle rearrangement. The heavy phosphorus doped silicon nanocrystalline is more easily oxidized by boron doping, so the particle rearrangement is more complete, the void is less and the density is larger when sintered. At the same time, at high temperature, the oxide on the surface of silicon nanocrystalline also produces viscous flow, which breaks the core-shell structure of the original silicon nanocrystalline and its surface oxides, thus making the heavily doped silicon nanocrystalline particles directly contact each other. An effective electrical connection is formed. On the other hand, the bulk materials prepared from heavy boron doped silicon nanocrystals are unable to form effective electrical connections due to their low density and large number of voids, so the carrier transport channels are few, which seriously restricts the improvement of their conductance.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TB383.2

【共引文獻(xiàn)】

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1 陳樂;謝敏;金璐;王鋒;楊德仁;;硅含量對SiO_x薄膜光學(xué)和電學(xué)性能的影響[J];材料科學(xué)與工程學(xué)報;2013年05期

2 程巖;郝維昌;李文獻(xiàn);許懷哲;陳蕊;竇士學(xué);;The variation of Mn-dopant distribution state with x and its effect on the magnetic coupling mechanism in Zn_(1-x) Mn_x O nanocrystals[J];Chinese Physics B;2013年10期

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1 王鋒;局域表面等離子體增強(qiáng)的氮化硅器件電致發(fā)光性能研究[D];浙江大學(xué);2014年

2 王蓉;低維硅材料表面效應(yīng)的密度泛函研究[D];浙江大學(xué);2014年

相關(guān)碩士學(xué)位論文 前6條

1 周述;利用冷等離子體制備硅和硼納米顆粒[D];浙江大學(xué);2013年

2 王龍;水熱法制備錳離子摻雜的ZnS納米晶[D];蘭州大學(xué);2013年

3 李健華;Mn~(2+)摻雜12CaO·7Al_2O_3粉體光學(xué)性質(zhì)與陶瓷電學(xué)性質(zhì)的研究[D];東北師范大學(xué);2013年

4 黃鑒;水相體系中CdSe：Ag及ZnSe：Cu摻雜量子點(diǎn)的合成與表征[D];合肥工業(yè)大學(xué);2013年

5 涂銀勛;Ag@SiO_2核殼納米粒子的制備及其熒光增強(qiáng)效應(yīng)[D];陜西師范大學(xué);2013年

6 管甜甜;高方阻太陽能電池的優(yōu)化[D];北京交通大學(xué);2014年

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本文編號：1979592