本文選題：超聲噴霧熱解法 + ZnO薄膜　； 參考：《遼寧師范大學(xué)》2014年碩士論文

【摘要】：氧化鋅近年來備受關(guān)注,它是被發(fā)現(xiàn)的新一代的紫外激發(fā)發(fā)射以及發(fā)射激光器件。隨著半導(dǎo)體器件在世界上的不斷發(fā)展,兩個至關(guān)重要的問題也相應(yīng)出現(xiàn),就是P型摻雜問題和帶隙工程問題。Zn0激活層是雙重異質(zhì)結(jié)的光激發(fā)材料,與其有關(guān)的P型摻雜及p-n結(jié)器件最近這些年的研究已經(jīng)有了很大進步。近期研究的重點是p-Zn0導(dǎo)電、Zn0基的p-n結(jié)合襯底。 制備鋁摻雜氧化鋅的方法大致為：磁控濺射法、分子束外延法、化學(xué)氣相沉積法(CVD)、有機金屬化學(xué)氣相沉積法(MOCVD)、溶膠-凝膠法以及噴霧熱解法等,超聲噴霧熱解法設(shè)備相對比較簡單,前驅(qū)體溶液制備更加方便,參數(shù)比較易于調(diào)節(jié),具備容易實現(xiàn)大面積鍍膜和方便進行大規(guī)模工業(yè)化生產(chǎn)等優(yōu)點。 醋酸鋅水溶液作為本次實驗的前驅(qū)體溶液,并以硝酸鋁為Al源,利用超聲噴霧熱解法系統(tǒng)在石英襯底和硅片襯底上制備了純Zn0薄膜和鋁摻雜氧化鋅薄膜。采用XRD(x射線衍射儀)、SEM(掃描電子顯微鏡)、PL(光致發(fā)光光譜)、紫外-可見光光譜儀和霍耳測試儀等測試方法,對氧化鋅薄膜與鋁摻雜氧化鋅的結(jié)構(gòu)和光電性能進行了測試,并根據(jù)測試結(jié)果對于在各種生長條件下,比如改變襯底溫度、前驅(qū)物溶液濃度、沉積時間和退火條件等實驗參數(shù)對Zn0薄膜結(jié)構(gòu)和性能的影響進行了研究。 實驗結(jié)果顯示超聲噴霧熱解法制備的鋁摻雜氧化鋅薄膜具有較好的光電性能。由PL譜可知以硅片為襯底的薄膜具有很強的近帶紫外發(fā)光峰。XRD測得數(shù)據(jù)顯示以石英為襯底的薄膜有著明顯的C軸擇優(yōu)取向。在不同溫度與不同濃度條件下制備的摻鋁氧化鋅薄膜,體現(xiàn)出最佳溫度是470度,nZn：nA,=1：0.04時為最佳濃度。通過霍爾測試結(jié)果得出,nZn:nAl=1:0.04時和襯底溫度為480度時樣品呈現(xiàn)p型導(dǎo)電性。
[Abstract]:Zinc oxide has attracted much attention in recent years. It is a new generation of UV excited emission and laser emission devices. With the continuous development of semiconductor devices in the world, two important problems have emerged: P-type doping problem and bandgap engineering problem. Zn0 activation layer is a photoexcited material with double heterojunction. In recent years, great progress has been made in the study of P-doped and p-n junction devices. Recent studies have focused on the p-n bonding substrates of p-Zn0 conducting Zn0 substrates. The methods of preparing aluminum doped zinc oxide are magnetron sputtering, molecular beam epitaxy, chemical vapor deposition, organic metal chemical vapor deposition, sol-gel method and spray pyrolysis, etc. The equipment of ultrasonic spray pyrolysis is relatively simple, the preparation of precursor solution is more convenient, the parameters are easy to adjust, and it is easy to realize large area coating and to carry out large-scale industrial production. Pure Zn0 thin films and Al-doped zinc oxide thin films were prepared on quartz and silicon substrates by ultrasonic spray pyrolysis system with aluminum nitrate as Al source and zinc acetate aqueous solution as the precursor solution in this experiment. The structure and optoelectronic properties of zinc oxide films doped with aluminum were measured by means of XRD(x ray diffractometer (XRD(x) and scanning electron microscopy (SEM), such as photoluminescence spectroscopy, UV-Vis spectrometer and Hall tester. The effects of various growth conditions, such as substrate temperature, concentration of precursor solution, deposition time and annealing conditions, on the structure and properties of Zn0 films were investigated. The experimental results show that aluminum doped zinc oxide films prepared by ultrasonic spray pyrolysis have good photoelectric properties. The PL spectra show that the thin films on silicon substrates have strong near-band ultraviolet luminescence peak. XRD data show that the films on quartz substrates have obvious C-axis preferred orientation. Under different temperature and different concentration, the optimum temperature is 470 擄n Zn: nA1: 0.04 as the optimum concentration of aluminum doped zinc oxide thin film. The results of Hall test show that the sample exhibits p-type conductivity at 1: 0.04 and 480 鈩，

本文編號：1955336