發(fā)布時(shí)間：2018-05-11 18:39

  本文選題：硫化鋅薄膜 + 磁控濺射�。� 參考：《原子核物理評(píng)論》2017年03期

【摘要】：采用熱反應(yīng)法對(duì)玻璃襯底上以磁控濺射制備的Zn薄膜進(jìn)行硫化,制備出Zn S薄膜。薄膜的微觀結(jié)構(gòu)、物相結(jié)構(gòu)和表面形貌分別采用正電子湮沒技術(shù)(PAT)、X射線衍射儀(XRD)、掃描電子顯微鏡(SEM)進(jìn)行分析和表征。利用慢正電子湮沒多普勒展寬對(duì)四個(gè)不同硫化溫度下得到的ZnS薄膜樣品中膜層結(jié)構(gòu)缺陷進(jìn)行研究,測(cè)量了薄膜中的空位型微觀缺陷的相對(duì)濃度,指出445℃硫化樣品中正電子注入能量在1.5～4.5 keV后S參數(shù)最小,說明該硫化溫度下反應(yīng)生成的ZnS薄膜結(jié)構(gòu)缺陷濃度最小,膜的致密度最高。XRD結(jié)果顯示薄膜在445℃以上硫化后,呈(111)擇優(yōu)生長(zhǎng)趨勢(shì)。從掃描電鏡的結(jié)果也可以看出,在445℃硫化后,薄膜的晶粒明顯地變得更大、更致密,這是因?yàn)閆nS晶胞比Zn晶胞大以及硫化過程中ZnS固相再結(jié)晶的緣故。
[Abstract]:Zn thin films prepared by magnetron sputtering on glass substrates were vulcanized by thermal reaction method and ZnS thin films were prepared. The microstructure, phase structure and surface morphology of the films were characterized by positron annihilation technique and scanning electron microscopy (SEM). By using slow positron annihilation Doppler broadening, the structure defects of ZnS films obtained at four different curing temperatures were studied. The relative concentrations of the vacancy microdefects in the films were measured. It is pointed out that the S parameter is the smallest after the positron injection energy is 1.5 ~ 4.5 keV, which indicates that the ZnS film produced by the reaction at the vulcanization temperature has the lowest structural defect concentration and the highest density. The results show that the film is vulcanized above 445 鈩，

本文編號(hào)：1875110