本文選題：硅鍺薄膜 + 低溫外延��； 參考：《無(wú)機(jī)材料學(xué)報(bào)》2017年02期

【摘要】：采用反應(yīng)型熱化學(xué)氣相沉積系統(tǒng)在硅(100)襯底上外延生長(zhǎng)富鍺硅鍺薄膜。四氟化鍺作為鍺源,乙硅烷作為還原性氣體。通過(guò)設(shè)計(jì)表面反應(yīng),在低溫條件下(350℃)制備了高質(zhì)量的富鍺硅鍺薄膜。研究了氫退火對(duì)低溫硅鍺外延薄膜微結(jié)構(gòu)和電學(xué)性能的影響。結(jié)果發(fā)現(xiàn)退火溫度高于700℃時(shí),外延薄膜的表面形貌隨著退火溫度的升高迅速惡化。當(dāng)退火溫度為650℃時(shí),獲得了最佳的退火效果。在該退火條件下,外延薄膜的螺旋位錯(cuò)密度從3.7×106 cm~(-2)下降到4.3×105 cm~(-2),表面粗糙度從1.27 nm下降到1.18 nm,而外延薄膜的結(jié)晶質(zhì)量也有效提高�；魻栃�(yīng)測(cè)試表明,經(jīng)退火處理的樣品載流子遷移率明顯提高。這些結(jié)果表明,經(jīng)過(guò)氫退火處理后,反應(yīng)型熱化學(xué)氣相沉積制備的低溫硅鍺外延薄膜可以獲得與高溫下硅鍺外延薄膜相比擬的性能。
[Abstract]:Germanium rich silicon germanium thin films were epitaxially grown on Si 100 substrates by reactive thermochemical vapor deposition (TCVD) system. Germanium tetrafluoride was used as germanium source and ethylsilane as reducing gas. High quality germanium-rich silicon-germanium films were prepared by designing surface reaction at low temperature (350 鈩，

本文編號(hào)：1835534