本文選題：MEMS皮拉尼真空計 + 硅電阻溫度關(guān)系��； 參考：《中北大學(xué)》2014年碩士論文

【摘要】：真空封裝是很多MEMS器件正常工作和提高器件性能的必要保障，因此微型真空腔體的氣壓值測量和檢測就成為一項重要的研究課題。MEMS皮拉尼真空計不僅具有靈敏度高和測量范圍寬等優(yōu)越性能，而且體積小、重量輕、熱響應(yīng)迅速等優(yōu)點，并且采用標(biāo)準(zhǔn)體硅工藝，便于與其它MEMS器件相集成。本研究小組提出了一種體硅微熱縫隙式MEMS皮拉尼真空計，具有高深寬比、雙熱沉結(jié)構(gòu)等結(jié)構(gòu)特點。本論文設(shè)計并制備了具有不同物理尺寸的MEMS皮拉尼真空計，包括不同電阻條長度、寬度、厚度以及電阻條和熱沉間隙�；跉怏w熱傳導(dǎo)的微觀原理和詳細(xì)測試實驗，系統(tǒng)分析研究了這些物理尺寸對器件性能的影響。 本文分析研究了物理尺寸對加熱體電阻的影響。隨著長度的增加、寬度和厚度的減小，實測電阻均大幅度地增加。大長度、小寬度和厚度以及大間隙結(jié)構(gòu)的實測電阻值與設(shè)計值偏差較顯著，這主要是由于光刻、深刻蝕等因素引起的結(jié)構(gòu)尺寸偏差造成的。采用四線法測量電阻，測試分析了硅加熱體的電阻溫度特性。結(jié)果顯示，在室溫至215℃范圍，電阻隨溫度上升不斷上升，其中在120℃以上，表現(xiàn)出良好的線性。 本文測量了器件在不同真空度下的溫度響應(yīng)時間。在1.275mA的小電流下，在全氣壓范圍內(nèi)，除寬度為10μm和15μm的器件，其它器件的加熱體溫度在10秒內(nèi)即可穩(wěn)定。寬度為10μm和15μm的器件，僅在10-3Pa下需要30s達(dá)到溫度穩(wěn)定，而在其它氣壓下，也僅需10s以內(nèi)。說明MEMS皮拉尼真空計具有快速響應(yīng)的特點。 本文對標(biāo)準(zhǔn)結(jié)構(gòu)器件的真空度傳感性能進(jìn)行了詳細(xì)測試分析。在2Pa至55.14Pa區(qū)間，電阻隨氣壓降低而顯著增加，形成高靈敏傳感區(qū)，其靈敏度SmH為259.23Ω/In(Pa)。在0.021Pa至2Pa區(qū)間，電阻隨氣壓降低而持續(xù)增加，形成低靈敏傳感區(qū)，其靈敏度SmL為125.00Ω/In(Pa)。當(dāng)氣壓小于0.021Pa時，電阻值增長緩慢，但仍具有一定的線性度，此段的平均靈敏度為19.87Ω/In(Pa)。當(dāng)氣壓高于100Pa時，靈敏度很低。因此，標(biāo)準(zhǔn)結(jié)構(gòu)器件的測量范圍為0.021Pa至55.14Pa。 本論文系統(tǒng)研究了不同物理尺寸對于器件真空度傳感性能的影響。結(jié)果顯示，增加長度、減小寬度和厚度均可顯著提升器件在測量范圍內(nèi)的靈敏度，其中減小寬度和厚度的提升效果更加明顯。與標(biāo)準(zhǔn)結(jié)構(gòu)器件相比，將寬度減小40%，器件的SmL和SmH分別增加了198.5%和165.5%；將厚度減小50%，器件的SmL和SmH分別增加了118.8%和101.0%。隨著電阻條與熱沉間隙的改變，，器件測量范圍基本沒有變化。但是可以通過縮短長度和增大加載功率來獲得更寬的傳感范圍。
[Abstract]:Vacuum packaging is the necessary guarantee for many MEMS devices to work properly and improve their performance. Therefore, the measurement and detection of pressure value of micro vacuum cavity has become an important research topic. MEMS Pilani vacuum gauge not only has the advantages of high sensitivity and wide measurement range, but also has the advantages of small volume, light weight, rapid thermal response and so on. The standard bulk silicon process is used to facilitate the integration with other MEMS devices. In this paper, a new type of bulk silicon micro-heat gap MEMS Pilani vacuum gauge with high aspect ratio and double heat sink structure is proposed. In this paper, a MEMS Pilani vacuum gauge with different physical dimensions is designed and fabricated, including the length, width, thickness, resistance strip and heat sink gap of the resistor strip. Based on the microscopic principle of gas heat conduction and the detailed testing experiments, the effects of these physical dimensions on the performance of the device are systematically analyzed and studied. In this paper, the effect of physical size on the resistor of heating body is analyzed and studied. With the increase of length and the decrease of width and thickness, the measured resistance increases greatly. The large length, small width and thickness, and the deviation between the measured resistance value and the design value of the large gap structure are significant, which is mainly caused by the structure dimension deviation caused by lithography, deep etching and other factors. The resistance temperature characteristics of silicon heater were measured by four-wire method. The results show that from room temperature to 215 鈩

本文編號：1834057