本文選題：微晶硅薄膜 + 結(jié)晶率　； 參考：《北京印刷學(xué)院》2014年碩士論文

【摘要】：隨著人口的不斷增加，社會的飛速發(fā)展，傳統(tǒng)的化石燃料因其不可再生和對環(huán)境的污染，越來越難以滿足人類日益增長的能源和環(huán)境需求。太陽能電池作為可再生無污染的新型綠色能源漸漸映入眼簾并逐漸成為人們研究的焦點。經(jīng)過近些年的發(fā)展，硅基太陽能電池占據(jù)太陽能電池的主導(dǎo)地位，，應(yīng)用在人們生活的各個領(lǐng)域。然而，由于其襯底的不可彎折，限制其更為廣泛的應(yīng)用及發(fā)展。為了拓寬其應(yīng)用領(lǐng)域，本文采用空心陰極等離子體化學(xué)氣相沉積在柔性有機(jī)襯底上制備微晶硅薄膜，進(jìn)行硅基太陽能電池薄膜測量的研究。我們對比三種襯底：玻璃、表面沉積氧化銦錫(ITO)的玻璃以及表面沉積氧化銦錫的聚酰亞胺(PI)，研究在不同襯底溫度、氣體比例、工作氣壓和功率密度條件下沉積的微晶硅薄膜結(jié)構(gòu)及性能，探討工藝參數(shù)對薄膜沉積速率、結(jié)晶率等性能的影響。此外，還研究了微晶硅薄膜生長過程中微觀結(jié)構(gòu)隨時間的演變，研究微晶硅薄膜可能的生長機(jī)制。得出以下結(jié)論： (1)工藝參數(shù)對微晶硅薄膜的生長有較大的影響。微晶硅薄膜沉積速率與襯底溫度、氣體比例、工作壓強(qiáng)、功率密度均呈正相關(guān)升高。而結(jié)晶率隨襯底溫度、功率密度、氣體比例的升高先升高再降低，隨工作壓強(qiáng)的升高單調(diào)降低。 (2)微空心陰極放電是一種有效的等離子體源，高電離率使得在90℃時也可以形成微晶硅結(jié)構(gòu),薄膜的微晶硅/非晶硅的晶化轉(zhuǎn)化溫度在80℃~90℃ (3)微晶硅的生長具有基體依賴性，不同襯底上微晶硅薄膜結(jié)晶率存在差異。玻璃和ITO玻璃上薄膜結(jié)晶率相近，而PI+ITO上薄膜結(jié)晶率較低。微晶硅薄膜的結(jié)晶性依賴于襯底材料。 (4)微晶硅薄膜的生長要經(jīng)歷三個階段，即非晶相——非晶/微晶混合相——微晶相/單晶相。相比于PI+ITO襯底，在玻璃和ITO玻璃上更易于沉積微晶硅薄膜。生長機(jī)制可能遵循島狀生長的Volmer-weber模式。
[Abstract]:With the increasing of population and the rapid development of society, it is more and more difficult for traditional fossil fuels to meet the increasing energy and environmental needs because of their non-renewable and environmental pollution. As a new type of renewable green energy, solar cells have gradually come into view and become the focus of research. With the development of recent years, silicon-based solar cells occupy a dominant position in solar cells and are used in various fields of people's lives. However, due to the unbending of its substrate, its wider application and development is limited. In order to broaden its application field, microcrystalline silicon thin films were prepared on flexible organic substrates by hollow cathode plasma chemical vapor deposition, and the measurement of thin films of silicon based solar cells was carried out. We compare three kinds of substrates: glass, surface deposited indium tin oxide (ITO) glass and surface deposited indium tin oxide polyimide (Pi). The structure and properties of microcrystalline silicon films deposited at working pressure and power density were investigated. The effects of process parameters on the deposition rate and crystallization rate were discussed. In addition, the evolution of microstructure with time during the growth process of microcrystalline silicon thin films was studied, and the possible growth mechanism of microcrystalline silicon thin films was studied. Draw the following conclusions: The process parameters have great influence on the growth of microcrystalline silicon thin films. The deposition rate of microcrystalline silicon films is positively correlated with substrate temperature, gas ratio, working pressure and power density. However, with the increase of substrate temperature, power density and gas ratio, the crystallization rate increases first and then decreases, and decreases monotonously with the increase of working pressure. (2) Microhollow cathode discharge is an effective plasma source. The high ionization rate makes it possible to form microcrystalline silicon structure at 90 鈩

本文編號：1775329