本文選題：脈沖激光沉積法 + 高頻軟磁薄膜��； 參考：《青島大學(xué)》2017年碩士論文

【摘要】：隨著電子信息技術(shù)向高集成化、小型化、薄膜化及高頻化方向發(fā)展,越來越多的元件要求集成在更小的基片上。為了減小電子系統(tǒng)的整體尺寸和重量,發(fā)展薄膜器件無疑成為滿足要求的實用方法。微波軟磁薄膜具有良好的磁性能,如高的飽和磁化強(qiáng)度4πMs,高的磁導(dǎo)率μ和低的阻尼常數(shù)α。因此,由軟磁薄膜組成的電感器其電感將顯著增強(qiáng),并且在單片微波集成電路中所需空間大大地減少。但是,外加磁場通常具有大的重量或高的功率消耗,這在集成電路中很難滿足小型化,輕量化和低功耗的性能要求。因此,具有磁各向異性的金屬軟磁薄膜吸引了越來越多的關(guān)注。軟磁薄膜的鐵磁共振頻率fFMR主要是由其飽和磁化強(qiáng)度4πMs和面內(nèi)單軸各向異性場H_K決定的。各向異性場H_K作為外稟參量對制備條件、缺陷等比較敏感,可以更容易的提高1-2個數(shù)量級,所以軟磁薄膜的研究主要集中在提高其單軸各向異性場方面。本論文圍繞著集成電路(IC)兼容性工藝條件下,磁各向異性軟磁薄膜的制備和微波軟磁特性提高等內(nèi)容,開展了以下主要研究工作:(1)條紋陣列結(jié)構(gòu)的磁各向異性。利用脈沖激光沉積法結(jié)合光刻工藝,制備了Ni_(80)Fe_(20)連續(xù)膜和條紋膜,研究了條紋長度均為5 mm,條紋寬度分別為20μm、30μm及40μm對于Ni_(80)Fe_(20)薄膜的微結(jié)構(gòu)和單軸各向異性的影響。經(jīng)分析測試發(fā)現(xiàn):連續(xù)膜表現(xiàn)出各向同性,其鐵磁共振頻率fFMR為1.71 GHz,而條紋膜表現(xiàn)出各向異性,且條紋膜的各向異性場H_K隨著條紋寬度的減小逐漸增大,當(dāng)條紋寬度減小至20μm時,條紋膜的鐵磁共振頻率fFMR增大到2.1 GHz。所有樣品的鐵磁共振頻率fFMR和各向異性場H_K的比較表明了鐵磁共振頻率的增大歸因于Ni_(80)Fe_(20)條紋膜的形狀各向異性的增加。(2)應(yīng)力誘導(dǎo)磁各向異性。利用脈沖激光沉積法,制備了膜厚為65 nm的一系列Fe56CO24B20非晶薄膜,通過彎曲Si襯底引入壓應(yīng)力,探究了壓應(yīng)力對薄膜的疇結(jié)構(gòu)及單軸各向異性的影響。經(jīng)分析測試發(fā)現(xiàn):易磁化軸垂直于壓應(yīng)力的方向;隨著壓應(yīng)力的增大,單軸磁各向異性場H_K從54 Oe增大到191 Oe,鐵磁共振頻率相應(yīng)地從3.41 GHz增大到4.03 GHz。隨后利用磁力顯微鏡(MFM)測試發(fā)現(xiàn)具有壓應(yīng)力的薄膜其條紋疇結(jié)構(gòu)及條紋的稱度隨壓應(yīng)力的增加逐漸增強(qiáng)。進(jìn)一步的分析表明,應(yīng)力沉積薄膜的方法不僅可以提高軟磁薄膜的鐵磁共振頻率,還可以降低磁損耗。
[Abstract]:With the development of electronic information technology towards high integration, miniaturization, thin-film and high frequency, more and more components are required to be integrated on smaller substrates.In order to reduce the overall size and weight of the electronic system, the development of thin film devices is undoubtedly a practical method to meet the requirements.Microwave soft magnetic thin films have good magnetic properties, such as high saturation magnetization 4 蟺 Ms, high permeability 渭 and low damping constant 偽.Therefore, the inductance of inductors made up of soft magnetic thin films will be greatly enhanced, and the space required in monolithic microwave integrated circuits will be greatly reduced.However, the applied magnetic field usually has large weight or high power consumption, which is difficult to meet the performance requirements of miniaturization, lightweight and low power consumption in integrated circuits.Therefore, metal soft magnetic thin films with magnetic anisotropy have attracted more and more attention.The ferromagnetic resonance frequency (fFMR) of soft magnetic thin films is mainly determined by the saturation magnetization of 4 蟺 Ms and the in-plane uniaxial anisotropic field HK.As an intrinsic parameter, the anisotropic field HK is more sensitive to the preparation conditions, defects and so on, and can easily increase 1-2 orders of magnitude, so the study of soft magnetic thin films is mainly focused on improving its uniaxial anisotropic field.This thesis focuses on the preparation of magnetically anisotropic soft magnetic thin films and the improvement of microwave soft magnetic properties under the condition of IC / IC compatibility. The main research work of this thesis is as follows: 1) the magnetic anisotropy of the striped array structure.By using pulsed laser deposition and photolithography, the nippon 80 FeSP-20) continuous film and stripe film were prepared. The effects of stripe length of 5 mm, stripe width of 20 渭 m ~ 30 渭 m and stripe width of 40 渭 m on the microstructure and uniaxial anisotropy of NiSZ _ (80) / S _ (FeX) _ (20) thin films were investigated.It is found that the continuous film shows isotropy, its ferromagnetic resonance frequency (fFMR) is 1.71GHz, and the stripe film exhibits anisotropy, and the anisotropic field HK of the stripe film increases with the decrease of stripe width.When the fringe width is reduced to 20 渭 m, the FMR frequency fFMR of the striped film increases to 2.1 GHz.The comparison of ferromagnetic resonance frequency (fFMR) and anisotropic field HK of all samples shows that the increase of ferromagnetic resonance frequency is attributed to the increase in the shape anisotropy of NiSZ _ (80) Fetig _ (20)) stripe films.A series of Fe56CO24B20 amorphous films with a thickness of 65 nm were prepared by pulsed laser deposition. The influence of compressive stress on the domain structure and uniaxial anisotropy of the films was investigated by introducing compressive stress into the curved Si substrate.It is found that the easy magnetization axis is perpendicular to the compressive stress direction, and with the increase of the compressive stress, the uniaxial magnetic anisotropy field HK increases from 54 Oe to 191 Oe, and the ferromagnetic resonance frequency increases from 3.41 GHz to 4.03 GHz correspondingly.Then the magnetic force microscope (MFM) test showed that the stripe domain structure and the symmetry of the stripe increased with the increase of the compressive stress in the thin films with compressive stress.Further analysis shows that the stress deposition method can not only increase the ferromagnetic resonance frequency of the soft magnetic thin film, but also reduce the magnetic loss.
【學(xué)位授予單位】：青島大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：O482.54;O484

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