本文選題：CIGS　切入點(diǎn)：薄膜　出處：《光譜學(xué)與光譜分析》2016年10期

【摘要】：采用恒電位電沉積法在ITO上制備了銅銦鎵硒(CIGS)前驅(qū)體薄膜,該前驅(qū)體薄膜在充氬氣管式爐中經(jīng)過高溫硒化可得到結(jié)晶良好的CIGS薄膜。采用X-射線衍射(XRD)、拉曼光譜(Raman)、掃描電子顯微鏡(SEM)和紫外-可見光-近紅外光譜儀分別表征了CIGS薄膜的結(jié)構(gòu)、形貌、成分以及可見-近紅外光譜(Vis-NIR)吸收特性。XRD結(jié)果表明前驅(qū)體薄膜高溫硒化后所得的CIGS薄膜具有(112)擇優(yōu)取向,薄膜中CIGS晶粒的平均尺寸為24.7nm,Raman光譜表明薄膜中的CIGS是具有黃銅礦結(jié)構(gòu)的四元純相,沒有其他二元三元雜相存在。Vis-NIR測量結(jié)果表明CIGS的禁帶寬度隨薄膜中鎵含量的增加而增加,當(dāng)Ga含量達(dá)5.41%時(shí),通過吸收光譜測得CIGS的禁帶寬度為1.11eV,通過理論計(jì)算得到鎵銦比為Ga/(In+Ga)=16.3%,小于SEM測量所得的鎵銦比Ga/(In+Ga)=21.4%,這表明還需進(jìn)一步提高CIGS薄膜的結(jié)晶度。所有測量表明優(yōu)化后的ITO/CIGS非常適合用來制作高質(zhì)量的雙面太陽能電池。該研究提出了制備低成本CIGS前驅(qū)體薄膜及高溫硒化的新方法,通過這些方法在ITO上制備了均勻、致密、附著力好的CIGS薄膜。通過上述表征可知,在新工藝下制備的CIGS薄膜結(jié)晶度高,成分合理,無雜相,光吸收性質(zhì)好。與磁控濺射法類似,電沉積法非常適合大面積工業(yè)化生產(chǎn),該工作對CIGS的規(guī)�；a(chǎn)具有重要的借鑒意義。
[Abstract]:Copper indium gallium selenite (CIGS) precursor thin films were prepared on ITO by potentiostatic electrodeposition. The CIGS thin films with good crystallization can be obtained by high temperature selenization in argon filled tube furnace.The structure and morphology of CIGS thin films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and UV-Vis near infrared spectroscopy (UV-VIR), respectively.The composition and the absorption characteristics of Vis-NIR by visible and near infrared spectroscopy. The XRD results show that the CIGS films obtained by high temperature selenization have a preferred orientation.The average size of CIGS grain in the film is 24.7 nm ~ (-1). The CIGS in the film is a pure quaternary phase with chalcopyrite structure, and no other binary ternary impurity phase exists. Vis-NIR results show that the band gap of CIGS increases with the increase of gallium content in the film.When Ga content is 5.41%, the band gap width of CIGS is 1.11 EV measured by absorption spectrum, and the Gallium indium ratio is 16.3 / Ga/(In by theoretical calculation, which is smaller than that measured by SEM, which indicates that the crystallinity of CIGS films needs to be further improved.All measurements show that the optimized ITO/CIGS is very suitable for high-quality double-sided solar cells.In this study, a new method of preparing low-cost CIGS precursor films and high temperature selenization was proposed. Homogeneous, dense and good adhesion CIGS films were prepared on ITO by these methods.The results show that the CIGS films prepared under the new technology have high crystallinity, reasonable composition, no impurity phase and good optical absorption.Similar to the magnetron sputtering method, the electrodeposition method is very suitable for large-scale industrial production, and this work has important reference significance for the large-scale production of CIGS.
【作者單位】： 中國農(nóng)業(yè)大學(xué)理學(xué)院;中國科學(xué)院過程工程研究所;北京交通大學(xué)理學(xué)院;
【基金】：國家高新技術(shù)發(fā)展計(jì)劃(863計(jì)劃)項(xiàng)目(2015AA034201) 國家科技支撐項(xiàng)目(2009BAB49B04)資助
【分類號(hào)】：O484;TM914.42

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