本文選題：薄膜太陽能電池材料　切入點(diǎn)：CdTe靶材　出處：《北京有色金屬研究總院》2014年碩士論文

【摘要】：CdTe禁帶寬度為1.46eV,光譜響應(yīng)與太陽光譜十分吻合,光吸收系數(shù)高達(dá)10-5cm-1,理論光電轉(zhuǎn)換效率達(dá)到29%,是公認(rèn)高效、廉潔的薄膜太陽能電池吸收材料。隨著CdTe薄膜太陽能電池技術(shù)的發(fā)展,高效、適用于大面積的濺射鍍膜工藝逐漸成為CdTe薄膜制備的主要方法,國內(nèi)外對濺射鍍膜工藝進(jìn)行了大量的研究。濺射靶材作為鍍膜的原材料,對薄膜的性能起著決定性的作用。出于技術(shù)保密,各國對該產(chǎn)品制備技術(shù)卻鮮見報(bào)道。因此CdTe靶材的制備技術(shù)研究,對國內(nèi)CdTe靶材及CdTe薄膜太陽能電池產(chǎn)業(yè)化發(fā)展有著重要的意義。 本文以真空熔煉后CdTe塊材為原料,經(jīng)破碎至300μm后,使用球磨機(jī)研磨CdTe粉體。通過研究研磨氣氛、研磨時間對CdTe粉體粒度、純度、物相結(jié)構(gòu)、顯微形貌的影響確立了CdTe粉體最佳研磨時間為10h,獲得的粉體粒度在3-4μm,雜質(zhì)元素含量在75ppm以下的高純CdTe粉體。 以制備的CdTe粉體為原料,設(shè)計(jì)正交實(shí)驗(yàn),采用熱壓燒結(jié)技術(shù)制備CdTe靶材。利用阿基米德排水法、XRD、SEM、ICP-MS等分析手段對CdTe靶材的致密度、相結(jié)構(gòu)、組織形貌、純度等性能進(jìn)行表征。通過對正交實(shí)驗(yàn)結(jié)果進(jìn)行極差分析,影響CdTe靶材致密度因素的工藝參數(shù)主次順序?yàn)椋罕貢r間、燒結(jié)溫度、燒結(jié)壓力；方差分析結(jié)果表明,在560℃-580℃溫度范圍內(nèi),保溫時間、壓力的改變對靶材密度的影響顯著,燒結(jié)溫度的改變對其影響微小。確定了熱壓制備CdTe靶材最優(yōu)工藝參數(shù)：燒結(jié)溫度580℃、保溫時間60min、燒結(jié)壓力33MPa。在最優(yōu)工藝條件下制備CdTe靶材,靶材致密度達(dá)到99.4%,通過對靶材斷面形貌進(jìn)行觀察,發(fā)現(xiàn)其晶粒尺寸比較均勻,靶材致密度非常好,僅含有微量封閉氣孔。 分別以致密度97.7%的靶材和最優(yōu)工藝條件下制備的致密度99.4%的靶材為濺射源,利用射頻磁控濺射法沉積CdTe薄膜。通過對比薄膜的沉積速率、物相結(jié)構(gòu)、光吸收系數(shù)、電阻率,發(fā)現(xiàn)致密度99.4%的CdTe靶材制備的薄膜各方面性能均要優(yōu)于致密度97.7%靶材制備的薄膜。分別將沉積的非晶態(tài)CdTe薄膜在150℃、250℃、350℃真空退火1個小時,發(fā)現(xiàn)薄膜由非晶態(tài)結(jié)構(gòu)轉(zhuǎn)變?yōu)槊嫘牧⒎浇Y(jié)構(gòu),且隨著退火溫度的升高薄膜電阻率急劇下降。 通過本文研究,建立了CdTe薄膜太陽能電池用靶材的熱壓制備工藝,采用射頻濺射鍍膜實(shí)驗(yàn)對靶材及其所得薄膜的性能進(jìn)行考察,結(jié)果顯示所制備的靶材可以滿足制備薄膜太陽電池吸收材料的需要,為該材料的工業(yè)化生產(chǎn)和使用提供了研究基礎(chǔ)。
[Abstract]:The band gap of CdTe is 1.46 EV, the spectral response is in good agreement with the solar spectrum, the optical absorption coefficient is as high as 10 ~ (-5) cm ~ (-1) and the theoretical photoelectric conversion efficiency is up to 29, which is recognized as a highly efficient and clean absorption material for thin film solar cells.With the development of CdTe thin film solar cell technology and high efficiency, the sputtering process suitable for large area sputtering has become the main method for the preparation of CdTe thin film. A lot of research on sputtering coating technology has been carried out at home and abroad.Sputtering target, as the raw material of coating, plays a decisive role in the properties of the film.Due to technical secrecy, the preparation technology of this product is rarely reported in many countries.Therefore, the research on the preparation technology of CdTe target is of great significance to the development of domestic CdTe target and CdTe thin film solar cell industrialization.In this paper, CdTe powder was ground by ball mill after crushing to 300 渭 m using vacuum melting CdTe block as raw material.By studying the effects of grinding atmosphere, grinding time on the particle size, purity, phase structure and microstructure of CdTe powder, the optimum grinding time of CdTe powder is 10 h, the particle size of CdTe powder is 3-4 渭 m, and the content of impurity element is below 75ppm.Using the prepared CdTe powder as raw material, orthogonal experiment was designed to prepare CdTe target by hot pressing sintering technology.The density, phase structure, microstructure and purity of CdTe target were characterized by Archimedes drainage method.Through the range analysis of the orthogonal experiment results, the order of the technological parameters influencing the density of CdTe target is as follows: holding time, sintering temperature, sintering pressure, variance analysis results show that, in the temperature range of 560 鈩，

本文編號：1690968