本文選題：功能性材料　切入點(diǎn)：分子基　出處：《南京大學(xué)》2017年碩士論文

【摘要】：在現(xiàn)在這樣信息化、科技化時(shí)代,我們每個(gè)人都離不開智能化硬件,而鐵電材料因?yàn)槠浣殡娦浴弘娦�、熱釋電性、鐵電性以及電光效應(yīng)、光折變效應(yīng)和非線性光學(xué)效應(yīng)等重要特性,它已經(jīng)被開發(fā)成為了一類比較重要的功能材料。它在信息存儲(chǔ)、微電子、遙感等領(lǐng)域有重要的應(yīng)用價(jià)值,鐵電材料的應(yīng)用推動(dòng)了電子信息工業(yè)的飛速發(fā)展,具有任何其他材料都不可替代的特殊應(yīng)用前景。目前應(yīng)用廣泛的主要是無(wú)機(jī)鐵電體,比如BaTi03,PbTi03和PbZrxTii-xO3,然而昂貴的制備工藝和制備過(guò)程中產(chǎn)生劇毒物會(huì)限制其在新型智能設(shè)備中的應(yīng)用。分子基鐵電薄膜能夠很好的解決上述的問(wèn)題。不僅是擁有更加優(yōu)異的性能,同時(shí)其在目前這種器件小型化應(yīng)用上有著獨(dú)天優(yōu)勢(shì)。二異丙胺溴晶體和4-吡啶甲胺高氯酸晶體具有較優(yōu)異的鐵電性能,本文期望通過(guò)制備薄膜調(diào)節(jié)其性能,為小型化器件化打下基礎(chǔ)。本論文主要通過(guò)簡(jiǎn)單的制備儀器、方便的制備工藝,制備出了二異丙胺溴薄膜和4-吡啶甲胺高氯酸薄膜。制備出的二異丙胺溴薄膜樣品的粗糙度較高,達(dá)到百納米級(jí)別,可能這樣的方式制得的薄膜并不能夠大面積的工業(yè)運(yùn)用;此方法能夠制得單一取向的二異丙胺溴薄膜樣品,且能夠通過(guò)外加電場(chǎng)改變其生長(zhǎng)方向。制備的4-吡啶甲胺高氯酸薄膜能夠在一定區(qū)域內(nèi)形成連續(xù)的平整度較高的鐵電薄膜;此方法擁有其他制備方法所沒(méi)有的最佳優(yōu)勢(shì)—使用制備技術(shù)簡(jiǎn)單且制備過(guò)程綠色無(wú)毒;制備出的薄膜樣品在一定程度上能夠和其單晶樣品所媲美。
[Abstract]:In this age of information technology and technology, each of us is inseparable from intelligent hardware, and ferroelectric materials are due to their dielectric, piezoelectric, pyroelectric, ferroelectric and electro-optic effects. Photorefractive effect and nonlinear optical effect have been developed as a kind of important functional materials. They have important application value in the fields of information storage, microelectronics, remote sensing and so on. The application of ferroelectric materials has promoted the rapid development of electronic information industry, and has a special application prospect that any other material can not be replaced. At present, inorganic ferroelectrics are widely used. For example, BaTi03, PbTi03 and PbZrxTii-xO3, however, expensive preparation processes and the production of highly toxic substances in the preparation process will limit their application in new smart devices. Molecular based ferroelectric thin films can solve these problems very well. The diisopropylamine bromide crystal and 4-pyridylamine perchloric acid crystal have excellent ferroelectric properties. In this paper, we hope to adjust the properties of diisopropylamine bromide crystal and 4-pyridine methylamine perchloric acid crystal by preparing thin films. This paper mainly through simple preparation instrument, convenient preparation technology, Diisopropylamine bromine films and 4-pyridylamine perchloric acid films were prepared. The single orientation diisopropylamine bromine films can be prepared by this method and the growth direction can be changed by applying electric field. The prepared 4-pyridyl methylamine perchloric acid thin films can form continuous ferroelectric thin films with high flatness in a certain region. This method has the best advantages that other preparation methods do not have-simple preparation technology and green nontoxic preparation process; the prepared thin film samples can be compared to their single crystal samples to a certain extent.
【學(xué)位授予單位】：南京大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O484
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本文編號(hào)：1673104