發(fā)布時(shí)間：2018-03-26 22:24

  本文選題：磁控濺射　切入點(diǎn)：AZO薄膜　出處：《壓電與聲光》2017年03期

【摘要】：利用射頻磁控濺射制備了Al摻雜的ZnO(AZO)薄膜,通過X線衍射(XRD)、原子力顯微鏡(AFM)及四探針等手段對薄膜進(jìn)行了表征,研究了不同熱處理溫度對AZO薄膜的形貌、結(jié)構(gòu)和電學(xué)性能的影響。研究表明,Al的摻雜體積分?jǐn)?shù)約為1.2%,隨著熱處理溫度的升高,薄膜顆粒大小均勻,AZO薄膜衍射峰強(qiáng)度先增強(qiáng)后減弱,當(dāng)熱處理溫度為450℃時(shí),該AZO薄膜的結(jié)晶性最好,電阻率最小為0.024 7Ω·cm。
[Abstract]:Al-doped ZnO AZO thin films were prepared by RF magnetron sputtering. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and four probes. The morphology of AZO films with different heat treatment temperatures was studied. The results show that the doping volume fraction of Al is about 1.2. With the increase of heat treatment temperature, the diffraction peak intensity of AZO thin film increases firstly and then weakens, and when the heat treatment temperature is 450 鈩，

本文編號：1669874