化學(xué)氣相沉積法于鎵酸鋰基板生長(zhǎng)氧化鋅薄膜的研究
發(fā)布時(shí)間:2018-03-24 22:15
本文選題:氧化鋅薄膜 切入點(diǎn):鎵酸鋰 出處:《無(wú)機(jī)鹽工業(yè)》2017年09期
【摘要】:研究了利用化學(xué)氣相沉積法在鎵酸鋰(001)基板上生長(zhǎng)氧化鋅薄膜,探討了生長(zhǎng)溫度、生長(zhǎng)壓力、生長(zhǎng)時(shí)間對(duì)薄膜結(jié)構(gòu)與特性的影響,以期尋找出生長(zhǎng)高品質(zhì)氧化鋅(0002)薄膜的最佳條件。研究結(jié)果表明,在氧氣與氮?dú)饬髁勘葹?00/400、生長(zhǎng)壓力為6.67 k Pa、生長(zhǎng)溫度為550℃、生長(zhǎng)時(shí)間為60 min條件下,于鎵酸鋰(001)基板上能夠生長(zhǎng)出高質(zhì)量的氧化鋅(0002)薄膜。
[Abstract]:Zinc oxide thin films were grown on lithium gallium oxide substrates by chemical vapor deposition. The effects of growth temperature, growth pressure and growth time on the structure and properties of the films were discussed. The results show that under the conditions of oxygen / nitrogen flow ratio of 600 / 400, growth pressure of 6.67 KPA, growth temperature of 550 鈩,
本文編號(hào):1660249
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