化學氣相沉積法于鎵酸鋰基板生長氧化鋅薄膜的研究
發(fā)布時間:2018-03-24 22:15
本文選題:氧化鋅薄膜 切入點:鎵酸鋰 出處:《無機鹽工業(yè)》2017年09期
【摘要】:研究了利用化學氣相沉積法在鎵酸鋰(001)基板上生長氧化鋅薄膜,探討了生長溫度、生長壓力、生長時間對薄膜結構與特性的影響,以期尋找出生長高品質氧化鋅(0002)薄膜的最佳條件。研究結果表明,在氧氣與氮氣流量比為600/400、生長壓力為6.67 k Pa、生長溫度為550℃、生長時間為60 min條件下,于鎵酸鋰(001)基板上能夠生長出高質量的氧化鋅(0002)薄膜。
[Abstract]:Zinc oxide thin films were grown on lithium gallium oxide substrates by chemical vapor deposition. The effects of growth temperature, growth pressure and growth time on the structure and properties of the films were discussed. The results show that under the conditions of oxygen / nitrogen flow ratio of 600 / 400, growth pressure of 6.67 KPA, growth temperature of 550 鈩,
本文編號:1660249
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