本文選題：氧化鋅薄膜　切入點(diǎn)：鉺熒光　出處：《山東大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：近年來,隨著光纖通信技術(shù)的不斷發(fā)展,鉺(Er)摻雜的半導(dǎo)體材料引起了研究者的極大興趣。這是因?yàn)?Er離子在1540nm處有很好的的熒光性質(zhì),而這一波段正好是光纖通訊的最低損耗窗口之一。然而,1540nm的輻射躍遷對于Er離子來說,屬于其電子殼層4f層組態(tài)內(nèi)的躍遷(簡稱f-f躍遷),是不符合宇稱守恒定則的,即該躍遷在常規(guī)情況下是禁戒的。因此,數(shù)以萬計(jì)的研究團(tuán)隊(duì)針對這個(gè)問題作出了巨大的努力,并提出了相應(yīng)的解決方案。在眾多解決方法中,我們發(fā)現(xiàn),如果將Er離子置于環(huán)氧環(huán)境中,并且以寬禁帶半導(dǎo)體作為宿主的話,那么該禁戒就能夠被打破——f-f躍遷不僅能夠?qū)崿F(xiàn),而且還可能得到優(yōu)良的熒光性質(zhì)�？紤]到這兩個(gè)方面,我們最終選擇了氧化鋅(ZnO)作為宿主,而且在磁控濺射生長ZnO:Er薄膜的時(shí)候通入一定量的氧氣(O2)。ZnO是一種寬禁帶直接帶隙半導(dǎo)體材料,禁帶寬度3.37eV(常溫),而且具有較大的激子結(jié)合能(60meV),它在短波長發(fā)光二極管、激光器和太陽能電池等方面應(yīng)用廣泛。在本論文中,我們主要運(yùn)用磁控濺射方法探索了 ZnO:Er薄膜的生長條件,并研究了薄膜厚度、退火溫度、襯底類型以及硅(Si)離子注入等條件對薄膜中Er離子紅外熒光的影響,并在后期重點(diǎn)分析了襯底Si擴(kuò)散對其熒光的抑制作用。在實(shí)驗(yàn)過程中,我們運(yùn)用盧瑟福背散射的實(shí)驗(yàn)方法測量并計(jì)算了薄膜的厚度及組分,依托X射線衍射譜分析了薄膜的結(jié)晶性質(zhì),至于薄膜的表面形貌,我們則是利用光學(xué)顯微鏡和原子力顯微鏡等進(jìn)行觀察。當(dāng)然,所有的紅外光譜都是由532nm的綠光激光器作為泵浦源,通過銦鎵砷探測器接收信號(hào),經(jīng)過一定處理而得到的。通過分析,我們發(fā)現(xiàn),一般情況下,以Si-SiO2為襯底,薄膜的厚度越厚,退火到250℃左右,Er-1540nm的熒光強(qiáng)度會(huì)更強(qiáng)。當(dāng)退火溫度達(dá)到550℃時(shí),Er-1540nm熒光會(huì)減弱,一方面是和能量傳輸相關(guān)的如缺陷能級等"中間態(tài)"少了,另一方面是因?yàn)?50℃的退火環(huán)境會(huì)誘發(fā)比較嚴(yán)重的襯底Si擴(kuò)散,這些擴(kuò)散進(jìn)薄膜的Si會(huì)"搶奪" Er的能量用于自身的發(fā)光、發(fā)熱等,從而降低了 Er的熒光效率。關(guān)于這一過程,我們首次建立了相應(yīng)的能量傳輸機(jī)制模型,并具體分析了 Si和Er能量傳輸效率低的原因。此外,我們還向ZnO:Er薄膜中注入了不同劑量的Si離子,發(fā)現(xiàn)當(dāng)注入劑量遠(yuǎn)大于薄膜中的Er含量時(shí),Er-1540nm的熒光重歸禁戒。但是樣品經(jīng)過高溫退火(氮?dú)猸h(huán)境)后,隨著薄膜損傷的恢復(fù),該禁戒又會(huì)被打破。這些實(shí)驗(yàn)結(jié)果及結(jié)論,對于Si基光電子材料的制作、集成等方面具有一定的參考意義,也為稀土發(fā)光理論的大樓添磚加瓦。
[Abstract]:In recent years, with the development of optical fiber communication technology, erbium Er-doped semiconductor materials have attracted great interest of researchers. This is because the er ion has good fluorescence properties at 1540nm. This band is one of the lowest loss windows for optical fiber communication. However, for er ion, the radiation transition at 1540nm belongs to the transition within the 4f configuration of the electron shell (f-f transition), which does not conform to the parity conservation rule. So tens of thousands of research teams have made tremendous efforts to address the problem and come up with solutions. Among the many solutions we have found, If the er ion is placed in the epoxy environment and the wide band gap semiconductor is used as the host, the forbidden ring can be broken. The f-f transition is not only possible, but also possible to obtain excellent fluorescence properties. Zinc oxide (ZnO) was chosen as the host, and a certain amount of oxygen O _ 2O _ 2O _ 2O _ 2O _ 2O _ 2O _ (2 +) was added to the ZnO:Er thin films grown by magnetron sputtering, which is a wide bandgap semiconductor material. The band gap is 3.37 EV (room temperature) and has a large exciton binding energy of 60 meV. It is widely used in short wavelength light-emitting diodes, lasers and solar cells. We have investigated the growth conditions of ZnO:Er thin films by magnetron sputtering, and studied the effects of the thickness of the films, annealing temperature, substrate type and Si + implantation on the infrared fluorescence of er ions in the films. The inhibitory effect of substrate Si diffusion on its fluorescence was analyzed in the later stage. In the process of the experiment, the thickness and composition of the films were measured and calculated by Rutherford backscattering. The crystalline properties of the films were analyzed by X-ray diffraction, and the surface morphology of the films was observed by optical microscope and atomic force microscope. All the infrared spectra are obtained by using the green laser of 532nm as the pump source, the signal is received by the indium gallium arsenic detector and processed to a certain extent. Through the analysis, we find that, in general, the thickness of the thin film is thicker on the Si-SiO2 substrate. The fluorescence intensity of Er-1540nm annealed at about 250 鈩，

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