本文選題：ZnON薄膜　切入點(diǎn)：磁控濺射　出處：《電子科技大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：近些年以來(lái),隨著半導(dǎo)體工藝技術(shù)的飛速發(fā)展,半導(dǎo)體薄膜材料在能源、信息、國(guó)防等眾多領(lǐng)域得到了廣泛應(yīng)用,尤其在平板顯示和太陽(yáng)能電池領(lǐng)域蘊(yùn)含著巨大的利用價(jià)值。薄膜材料是支撐科技信息產(chǎn)業(yè)發(fā)展的重要基礎(chǔ)之一,必將獲得更廣闊的發(fā)展空間。作為新型氧化物薄膜材料的代表之一,ZnON薄膜以其高載流子遷移率、優(yōu)良的光學(xué)和電學(xué)特性、高穩(wěn)定性、清潔無(wú)污染、原材料豐富等優(yōu)勢(shì)成為人們關(guān)注研究的焦點(diǎn)。本文通過(guò)制備ZnON薄膜,探究其最佳的工藝參數(shù)和制備條件,并對(duì)制備的薄膜材料進(jìn)行性能表征。以ZnON薄膜為有源層制備ZnON基薄膜晶體管(ZnON-TFT),完成TFT工藝制備流程,對(duì)得到的ZnON-TFT電學(xué)特性進(jìn)行測(cè)量,探究不同制備條件對(duì)ZnON-TFT電學(xué)特性的影響。具體內(nèi)容分為以下三個(gè)部分:首先,采用射頻磁控濺射鍍膜法制備ZnON薄膜,改變氧氮比、濺射功率和靶基距等制備參數(shù),對(duì)制備的薄膜材料進(jìn)行光學(xué)特性、方阻、SEM等性能表征。結(jié)果表明氮氧比對(duì)薄膜光透過(guò)率的影響最大,隨著氮?dú)饬髁恐饾u增加,薄膜內(nèi)氮元素含量增加,透過(guò)率逐漸減少,禁帶寬度降低。同時(shí),薄膜透過(guò)率還與濺射功率和靶基距有關(guān),濺射功率增大,透過(guò)率減小;靶基距增大,透過(guò)率增大。另外,方阻隨著氮元素含量的增加而減少。SEM圖表明實(shí)驗(yàn)制備ZnON薄膜表面比較平整。其次,以ZnON薄膜為有源層,Si作為柵極,Si02作為柵絕緣層,Mo作為源漏電極制備ZnON-TFT。以已含有Si02層的重?fù)诫sP型Si作為襯底,先采用射頻磁控濺射鍍膜法制備80nm厚ZnON薄膜,再采用直流磁控濺射鍍膜法制備100nm厚Mo薄膜,經(jīng)過(guò)光刻、刻蝕等工藝后得到ZnON-TFT。最后,對(duì)不同制備參數(shù)下ZnON-TFT進(jìn)行電學(xué)性能的測(cè)試。采用半導(dǎo)體測(cè)試儀測(cè)量TFT的轉(zhuǎn)移特性曲線和輸出特性曲線,將數(shù)據(jù)繪制成圖,提取TFT特性參數(shù)。結(jié)果表明,隨著氮?dú)饬髁亢蜑R射功率增加,ZnON-TFT載流子遷移率與開關(guān)比先增大后減小,亞閾值擺幅先減小后增大。隨著靶基距的增加,遷移率和開關(guān)比逐漸減小,亞閾值擺幅增大。得到最佳制備工藝參數(shù)為氮?dú)饬髁?0sccm,濺射功率120W,靶基距9cm,此時(shí)載流子遷移率為6.12cc2/V^s,開關(guān)比1.14×105,亞閾值擺幅為1.5 V/dec,閾值電壓為8.5V。閾值電壓均為正值表明制備的ZnON-TFT為n溝道增強(qiáng)型TFT器件。
[Abstract]:In recent years, with the rapid development of semiconductor technology, semiconductor thin film materials have been widely used in many fields, such as energy, information, national defense, etc. Especially in the field of flat panel display and solar cells, there is great value in utilization. Thin film material is one of the important bases to support the development of science and technology information industry. As a representative of new oxide thin films, ZnON thin films have high carrier mobility, excellent optical and electrical properties, high stability, clean and pollution-free. The advantages of abundant raw materials have become the focus of research. In this paper, the optimal process parameters and preparation conditions of ZnON thin films are investigated. The ZnON based thin film transistors were prepared by using ZnON thin film as active layer. The preparation process of TFT was completed and the electrical properties of ZnON-TFT were measured. The effects of different preparation conditions on the electrical properties of ZnON-TFT were investigated. The specific contents were as follows: firstly, ZnON films were prepared by RF magnetron sputtering, and the preparation parameters such as oxygen to nitrogen ratio, sputtering power and target distance were changed. The optical properties of the films were characterized by SEM. The results show that the ratio of nitrogen to oxygen has the greatest influence on the optical transmittance of the films. With the increase of nitrogen flow rate, the content of nitrogen element in the films increases, and the transmittance decreases gradually. At the same time, the transmittance of the films is related to the sputtering power and the target substrate distance. The sputtering power increases and the transmittance decreases, and the target substrate distance increases and the transmittance increases. The square resistance decreases with the increase of nitrogen content. The results show that the surface of ZnON films prepared by experiments is flat. Secondly, ZnON-TFTs were prepared by using ZnON thin film as active layer and Si as gate insulator and Mo as source leakage electrode. The 80nm thick ZnON thin films were prepared by RF magnetron sputtering with heavily doped P-type Si with Si02 layer as substrate. Then 100 nm thick Mo thin films were prepared by DC magnetron sputtering. ZnON-TFTs were obtained by photolithography and etching. The electrical properties of ZnON-TFT under different preparation parameters were tested. The transfer characteristic curve and output characteristic curve of TFT were measured by semiconductor tester, and the data were drawn into a graph to extract the characteristic parameters of TFT. With the increase of nitrogen flow rate and sputtering power, the carrier mobility of ZnON-TFT decreases first and then decreases, the sub-threshold swing decreases first and then increases, and the mobility and switching ratio decrease gradually with the increase of the target base distance. The optimum preparation parameters are nitrogen flow rate 30 sccm, sputtering power 120 W, target base distance 9 cm, carrier mobility 6.12 cc2 / V ^ s, switching ratio 1.14 脳 10 5, subthreshold swing 1.5 V / deco, threshold voltage 8.5 V. the threshold voltage is positive. The ZnON-TFT is n channel enhanced TFT device.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O484

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相關(guān)期刊論文 前2條

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本文編號(hào)：1621943