本文選題：光誘導(dǎo)橫向熱電效應(yīng)　切入點(diǎn)：c軸傾斜的Bi_2Sr_2Co_2Oy薄膜　出處：《河北工業(yè)大學(xué)》2016年博士論文　論文類型：學(xué)位論文

【摘要】：光誘導(dǎo)橫向熱電效應(yīng)(簡稱LITT效應(yīng))是一種溫差和電壓方向相互垂直的熱電效應(yīng),通常只能在c軸傾斜生長的薄膜、單晶及人工構(gòu)建的多層結(jié)構(gòu)中觀測(cè)得到。該效應(yīng)源于材料各向異性的Seebeck系數(shù),實(shí)質(zhì)是一個(gè)光-熱-電轉(zhuǎn)換過程。自LITT效應(yīng)發(fā)現(xiàn)20多年以來,幾乎所有相關(guān)報(bào)道都集中在樣品的幾何參數(shù)對(duì)該效應(yīng)的影響上,而極少涉及材料電、熱輸運(yùn)參量的調(diào)控和優(yōu)化,這也在一定程度上制約了LITT效應(yīng)的發(fā)展。本文采用化學(xué)溶液沉積技術(shù)在c軸傾斜的La Al O3(001)單晶基片上外延生長了Bi_2Sr_2Co_2O_y熱電薄膜,從電、熱參量調(diào)控機(jī)理及溫度場(chǎng)理論出發(fā),研究了摻雜、氧空位和光吸收層等對(duì)薄膜LITT效應(yīng)的影響。其目標(biāo)是通過結(jié)構(gòu)或微結(jié)構(gòu)調(diào)控來優(yōu)化薄膜材料的電、熱輸運(yùn)參量及薄膜對(duì)光輻射的吸收,提高LITT效應(yīng)中的光-熱和熱-電轉(zhuǎn)換效率,為研制新一代基于LITT效應(yīng)設(shè)計(jì)的高靈敏寬波段光探測(cè)器提供指導(dǎo)。主要實(shí)驗(yàn)結(jié)論如下:1.研究了基本實(shí)驗(yàn)參量如薄膜厚度、傾斜角度、激光入射方向、波長、能量等對(duì)Bi_2Sr_2Co_2O_y薄膜LITT效應(yīng)的影響。實(shí)驗(yàn)發(fā)現(xiàn)當(dāng)用不同波長激光對(duì)薄膜表面進(jìn)行加熱時(shí)均可以觀測(cè)到橫向開路電壓信號(hào)且信號(hào)幅值與以上參量密切相關(guān)。進(jìn)一步用熱源(如電烙鐵)替代光源,仍可以觀測(cè)到開路電信號(hào)且信號(hào)幅值隨熱源溫度升高而增大。分析認(rèn)為該電壓信號(hào)源于薄膜各向異性的Seebeck系數(shù),即橫向熱電效應(yīng)。2.通過改變樣品后退火溫度及氣體氛圍來調(diào)控薄膜的微結(jié)構(gòu)和氧含量,研究了薄膜微結(jié)構(gòu)和氧含量對(duì)其LITT效應(yīng)的影響。實(shí)驗(yàn)發(fā)現(xiàn)退火溫度高、氧含量大的樣品電阻率減小(薄膜電阻率減小可增大其上下表面溫差)而熱導(dǎo)率增大且Seebeck系數(shù)呈現(xiàn)更強(qiáng)的各向異性,因此LITT效應(yīng)輸出電壓具有更大的靈敏度和更快的響應(yīng)時(shí)間。在此基礎(chǔ)上,進(jìn)一步研究了摻雜和雙層結(jié)構(gòu)對(duì)薄膜LITT效應(yīng)的影響。實(shí)驗(yàn)發(fā)現(xiàn)Bi_2Sr_2Co_2O_y摻入Pb和構(gòu)建Bi_2Sr_2Co_2O_y/Pb_2Sr_2Co_2O_y多層膜均可以可以增大薄膜ab平面和c軸方向Seebeck系數(shù)的差值ΔS,導(dǎo)致LITT效應(yīng)輸出電壓靈敏度提高。3.以石墨、碳納米管、納米銀顆粒等材料為光吸收層,研究了光吸收層類型、幾何尺寸(面積、厚度)對(duì)薄膜LITT效應(yīng)的影響。結(jié)果表明:a)所有光吸收層均可增強(qiáng)LITT過程中的光-熱轉(zhuǎn)換效率,使薄膜上下表面溫差增大,從而增大LITT效應(yīng)輸出電壓的靈敏度。b)當(dāng)光吸收層面積與入射光斑面積相等,厚度恰好實(shí)現(xiàn)完全光吸收時(shí),LITT效應(yīng)中光-熱轉(zhuǎn)換效率最高,獲得的輸出電壓最大。c)三種光吸收材料中,碳納米管光吸收層的效果最佳。4.研究了Bi_2Sr_2Co_2O_y薄膜的變溫LITT效應(yīng)。在30-150K和20-250℃的溫度范圍內(nèi),電壓幅值隨測(cè)試溫度的升高而增大。我們認(rèn)為:低溫區(qū)(150-30K)電壓幅值的減小與Bi_2Sr_2Co_2O_y薄膜ΔS的減小及因電阻率的增大導(dǎo)致的薄膜上下表面溫差減小均有關(guān)系;但高溫區(qū)(20-250℃)電壓幅值增大的物理機(jī)制有待于進(jìn)一步探究。除LITT效應(yīng)外,我們還研究了非斜切Bi_2Sr_2Co_2O_y薄膜的橫向光伏效應(yīng)及Bi_2Sr_2Co_2O_y/Si異質(zhì)結(jié)的變溫整流及光伏特性。上述結(jié)果表明Bi_2Sr_2Co_2O_y薄膜不僅在熱電器件而且在基于橫向熱電效應(yīng)設(shè)計(jì)的光、熱探測(cè)器等領(lǐng)域都具有潛在的應(yīng)用前景。
[Abstract]:Light induced transverse thermoelectric effect (LITT effect) is a kind of thermoelectric effect of temperature and voltage direction perpendicular to each other, usually only inclined thin films grown on the c axis, the observed single crystal and multilayer structure is constructed. The Seebeck coefficient of the effect stems from the material anisotropy, is essentially a light heat electricity the conversion process. Since the discovery of LITT effect for 20 years, almost all relevant reports have focused on the geometric parameters of the samples affect the effect, and rarely involve material electricity, control and optimization of operation parameters of heat transmission, this has to a certain extent, restricts the development of the LITT effect in La Al. O3 tilt c axis adopts chemical solution deposition (001) single crystal substrate of Bi_2Sr_2Co_2O_y thermoelectric films, starting from the electric thermal parameters, regulation mechanism and temperature field theory, studied the doping, oxygen vacancy and light absorption layer of thin film LITT. Should the effect. Its goal is through the structure or micro structure control to optimize the thin film materials, heat transport parameters and film for light radiation absorption, improve the LITT effect in light - heat - electricity conversion efficiency, for the development of a new generation of Takama Mihiro band LITT effect based on the design of optical detectors provide guidance the main conclusions are as follows: 1.. Experimental study on basic experimental parameters such as film thickness, inclination angle, the direction of the incident laser energy, wavelength, influence on the LITT effect of Bi_2Sr_2Co_2O_y films. The experimental results showed that when using different wavelength of laser heating of the film surface can be observed when the lateral open circuit voltage signal and signal amplitude and the above parameters are closely related further. With the heat source (such as electric iron) to replace the light, still can be observed in open circuit of electric signals and signal amplitude increases with the increase of heat source temperature. Analysis shows that the voltage signal source in anisotropic thin film The Seebeck coefficient of the opposite sex, namely micro structure and oxygen content of the transverse thermoelectric effect by changing the.2. samples after annealing temperature and atmosphere control film, study the effect of film microstructure and oxygen content on the LITT effect. The experimental results showed that high annealing temperature, oxygen content of large sample resistivity (thin film resistivity reduction can be reduced increase the surface temperature difference) and anisotropic thermal conductivity increases and the Seebeck coefficient is stronger, so the LITT effect of the output voltage has greater sensitivity and faster response time. On this basis, further studied the effects of doping and double layer structure of thin film LITT effect. The experimental results showed that Bi_2Sr_2Co_2O_y doped Pb and Bi_2Sr_2Co_2O_y/Pb_2Sr_2Co_2O_y multilayer construction film can increase value delta film ab plane and C axis direction Seebeck coefficient of S, leading to LITT output voltage sensitivity of.3. to improve the effect of stone Graphite, carbon nanotube, nano silver particles and other materials for the light absorption layer of the light absorbing layer type, geometry size (area, thickness) of the film LITT effect. The results showed that: a) all the light absorption layer can be enhanced in the process of LITT light heat conversion efficiency, so that the surface temperature difference increase film the sensitivity of.B, thereby increasing the output voltage of the LITT effect) when the light absorption layer area and incident spot area of equal thickness just complete absorption, LITT effect of light heat conversion efficiency is the highest, the maximum output voltage obtained by the.C) three light absorbing materials, carbon nano tube temperature and LITT effect of light absorption layer the best.4. Bi_2Sr_2Co_2O_y films were studied. The temperature range of 30-150K and 20-250 DEG C, the voltage amplitude increases with the increase of temperature. We believe that: low temperature region (150-30K) and Bi_2Sr_2Co_2O_y S of the film decreases the amplitude of voltage reduction Small and lead to the increase of the resistivity of the film due to surface temperature difference decreased; but the high temperature (20-250 DEG C) physical mechanism of voltage amplitude increases need to be further studied. In addition to the LITT effect, we also study the non vicinal Bi_2Sr_2Co_2O_y film lateral photovoltaic effect and Bi_2Sr_2Co_2O_y/Si heterojunction rectification and photovoltaic properties. The temperature the results show that the Bi_2Sr_2Co_2O_y films not only in the thermoelectric device and thermoelectric effect in the horizontal design based on a light, has a potential application prospect in areas such as thermal detectors.

【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：O482.6;O484

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