本文選題：非晶RuMoC　切入點(diǎn)：無籽晶阻擋層　出處：《金屬學(xué)報(bào)》2017年01期 　論文類型：期刊論文

【摘要】：采用磁控共濺射Ru和MoC靶制備非晶RuMoC薄膜。用四探針儀(FPPT)、X射線光電子能譜儀(XPS)、高分辨率透射電鏡(HRTEM)和小角掠射X射線衍射儀(GIXRD)表征不同摻雜組分RuMoC薄膜和不同溫度退火態(tài)Cu/RuMoC/p-SiOC∶H/Si多層膜系的方塊電阻、成分和微觀結(jié)構(gòu)。結(jié)果表明,通過調(diào)控Ru膜中摻入Mo和C元素的含量能夠?qū)崿F(xiàn)RuMoC合金薄膜微結(jié)構(gòu)設(shè)計(jì)及抑制膜體殘余氧含量,且當(dāng)MoC和Ru靶的濺射功率比為0.5時(shí)獲得的RuMoCII薄膜綜合性能最佳;500℃退火態(tài)RuMoC II薄膜中C-Mo和C-Ru化學(xué)鍵均未出現(xiàn)大量斷裂,兩者協(xié)同作用抑制了RuMoC薄膜再結(jié)晶和膜體氧含量升高,是Cu/RuMoCII/p-SiOC∶H/Si多層膜系具有高溫?zé)岱�(wěn)定性和優(yōu)異電學(xué)性能的主要機(jī)制。
[Abstract]:Amorphous RuMoC thin films were prepared by magnetron co-sputtering of Ru and MoC targets. RuMoC films with different doped components and different temperatures were characterized by four-probe X-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (TEM) and small angle grazing X-ray diffraction (SG-GIXRD). Square Resistance of degree annealed Cu/RuMoC/p-SiOC:H/Si multilayer system, The results show that the microstructure design and residual oxygen content of RuMoC alloy films can be achieved by regulating the content of Mo and C in Ru films. Moreover, when the sputtering power ratio of MoC and Ru target is 0.5, the best comprehensive properties of RuMoCII films are obtained. The chemical bonds of C-Mo and C-Ru in RuMoCII films annealed at 500 鈩，

本文編號：1564270