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  本文關(guān)鍵詞： ITO薄膜 歐姆接觸 p型單晶硅 退火　出處：《半導(dǎo)體光電》2016年05期 　論文類型：期刊論文

【摘要】：室溫下用射頻磁控濺射法在玻璃和p型單晶硅襯底上沉積ITO薄膜,并對其進(jìn)行不同溫度的退火處理。采用XRD衍射儀測試薄膜結(jié)晶性,用紫外-可見分光光度計和霍爾效應(yīng)測試試樣光電性能,用吉時利2400表測試ITO/p-Si接觸的I-V曲線,用線性傳輸線模型測試比接觸電阻。研究結(jié)果表明:室溫下沉積的ITO薄膜與p-Si形成歐姆接觸,但比接觸電阻較大。退火處理可以進(jìn)一步優(yōu)化接觸性能,200℃退火后試樣保持歐姆接觸且比接觸電阻下降為8.8×10~(-3)Ω·cm~2。隨著退火溫度進(jìn)一步升高到300℃,比接觸電阻達(dá)到最低值2.8×10~(-3)Ω·cm~2,但接觸性能變?yōu)榉蔷�性。
[Abstract]:ITO thin films were deposited on glass and p-type monocrystalline silicon substrates by RF magnetron sputtering at room temperature and annealed at different temperatures. The crystallinity of the films was measured by XRD diffractometer. The photoelectric properties of the samples were tested by UV-Vis spectrophotometer and Hall effect. The I-V curves of ITO/p-Si contacts were measured by using the Jishli 2400 meter. The specific contact resistance was measured by linear transmission line model. The results show that the ITO films deposited at room temperature form ohmic contact with p-Si. But the specific contact resistance is larger. After annealing at 200 鈩，

本文編號：1541995