本文關(guān)鍵詞： 太陽能電池材料 CdS薄膜 Cu_2O薄膜 CuS薄膜 多元醇法 化學(xué)浴沉積法　出處：《西南交通大學(xué)》2014年碩士論文　論文類型：學(xué)位論文

【摘要】：太陽能電池是解決能源危機(jī)和環(huán)境問題的最有效手段之一,但高成本限制了太陽能電池的大規(guī)模應(yīng)用。因此,通過低成本的制備方法和材料的使用來降低太陽能電池的成本具有重要的實(shí)用價(jià)值。本文主要研究了采用低成本的制備方法(多元醇法和化學(xué)浴沉積法)來制備低成本的氧族化合物半導(dǎo)體薄膜材料,期望可以為后續(xù)制備低成本太陽能電池提供新的參考方法。研究結(jié)果如下： (1)首次采用多元醇法,以醋酸鎘為鎘源,硫脲為硫源,二甘醇為溶劑,在玻璃基底上制備CdS薄膜,并系統(tǒng)研究了制備條件對薄膜的影響。結(jié)果表明,當(dāng)硫鎘濃度比增大時(shí),薄膜厚度呈先增后減的趨勢,與透射率的趨勢相反,并且當(dāng)濃度比為1：5和1：2時(shí)出現(xiàn)瓣?duì)頒dS,濃度比繼續(xù)增大,顆粒粒徑減��；當(dāng)沉積時(shí)間增加時(shí),薄膜的厚度增加,組成薄膜的顆粒粒徑增大,透射率減小,并且在70min后反應(yīng)基本停止；當(dāng)沉積溫度增加時(shí),薄膜厚度呈先增后減的趨勢,透射率呈現(xiàn)先減后增的趨勢,并且溫度升高粗糙度下降,薄膜表面更加平整；此外,不同條件下制備的薄膜帶隙均略大于塊體CdS的帶隙值。 (2)采用多元醇法,以硝酸銅為銅源,乙二醇為溶劑和還原劑,在玻璃基底上制備Cu20薄膜,并系統(tǒng)研究了制備條件對薄膜的影響。結(jié)果表明,當(dāng)銅源濃度增大時(shí),薄膜厚度和顆粒的平均粒徑均增大,透射率減小,但孔隙也隨之增加,對基底的覆蓋率減��；當(dāng)沉積時(shí)間增加時(shí),薄膜的厚度與顆粒粒徑均增大,薄膜透射率減小,但顆粒間的孔隙也隨之增加,沉積時(shí)間超過90min時(shí),顆粒基本孤立,沒有連接成膜；當(dāng)沉積溫度增高時(shí),薄膜厚度與顆粒粒徑均呈先減后增的趨勢,與透射率趨勢相反；此外,不同條件下制備的Cu20薄膜均為立方晶系結(jié)構(gòu),帶隙均大于塊體Cu20的帶隙值。 (3)采用化學(xué)浴沉積法,氯化銅為銅源,硫脲為硫源,氨水提供氫氧根離子,三乙醇胺(TEA)為絡(luò)合劑,在玻璃基底上制備CuS薄膜,并系統(tǒng)研究了制備條件對薄膜的影響。結(jié)果表明,當(dāng)硫銅濃度比增大時(shí),除濃度比為3：1時(shí)薄膜厚度相對較小外,其它濃度比下薄膜的厚度差別不大,薄膜顆粒粒徑呈現(xiàn)減小的趨勢；當(dāng)三乙醇胺添加量增加時(shí),薄膜的厚度和顆粒粒徑均呈增大的趨勢,透射率減小,但顆粒間的孔隙也隨之增加,三乙醇胺添加量超過7ml時(shí),顆粒平均粒徑均在300nm以上；當(dāng)氨水添加量增加時(shí),薄膜的厚度和顆粒粒徑均呈增大的趨勢,透射率減小,孔隙增大,氨水添加量在9ml時(shí)顆粒平均粒徑達(dá)到400nm以上；此外,不同條件下制備的CuS薄膜均為六方晶系結(jié)構(gòu),帶隙均大于塊體CuS的帶隙值。 (4)分別對三個體系的沉積機(jī)制進(jìn)行了研究,發(fā)現(xiàn)當(dāng)薄膜在溶液中進(jìn)行生長時(shí),薄膜基本屬于顆粒薄膜且組成薄膜的顆�；緸榍蛐位驒E球形,薄膜由顆粒的不斷生長最終合并而成,符合島狀生長特征,因此推測屬于離子-離子生長機(jī)制。同時(shí)溶液中通過同質(zhì)沉積生成的顆粒也會吸附在薄膜表面,但附著力較差,可以通過超聲清洗將其去除掉。
[Abstract]:The solar cell is one of the most effective means to solve the energy crisis and the environmental problem , but the high cost limits the large - scale application of the solar cell . Therefore , the cost of the solar cell is reduced by the low - cost preparation method and the use of the material . This paper mainly studies the low - cost preparation method ( polyol method and chemical bath deposition method ) to prepare the low - cost oxygen group compound semiconductor thin film material , and it is expected that the new reference method can be provided for the subsequent preparation of the low - cost solar cell . The results show that when the concentration ratio is 1 : 5 and 1 : 2 , the thickness of the film increases and the particle size of the film decreases . When the concentration ratio is 1 : 5 and 1 : 2 , the particle size of the film increases and the particle size of the film decreases . When the deposition temperature increases , the film thickness increases , the transmittance decreases , and the surface of the film is even more even when the deposition temperature increases . In addition , the film band gap prepared under different conditions is slightly larger than the band gap value of the bulk CdS . ( 2 ) Using polyol method , copper nitrate as copper source , ethylene glycol as solvent and reducing agent to prepare Cu20 thin film on glass substrate . The results showed that when the concentration of copper source increased , the film thickness and the average particle size of the particles increased and the transmittance decreased , but the porosity of the film was decreased . When the deposition time was over 90 min , the film thickness and the particle size increased and the transmittance decreased . In addition , the Cu20 films prepared under different conditions were cubic crystal structure , and the band gap was larger than the band gap value of the bulk Cu20 . ( 3 ) Using chemical bath deposition method , copper chloride is copper source , thiourea is sulfur source , ammonia water provides hydroxide ion , triethanolamine ( TEA ) is complexing agent , the thickness of the film and the particle size of the film are smaller than that of the lower film when the concentration ratio is 3 鈭，

本文編號：1501605