本文關(guān)鍵詞： 氧化鋅薄膜壓敏電阻 射頻磁控濺射 熱浸 電學(xué)性能　出處：《中國地質(zhì)大學(xué)(北京)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著電子技術(shù)的迅速發(fā)展,電子器件不斷向小型化、低壓化發(fā)展,而傳統(tǒng)的陶瓷制備法受到技術(shù)局限難于小型化、低壓化,開發(fā)薄膜壓敏電阻勢在必行。但是,目前薄膜壓敏電阻的非線性通常較差,為解決這個難題,本文用射頻磁控濺射方法,對缺氧型氧化鋅(ZnO_(1-x))薄膜中的缺陷類型和水平進(jìn)行調(diào)制,探索其對薄膜組成、結(jié)構(gòu)和電學(xué)性能的影響,揭示了其導(dǎo)電機(jī)理;并選擇低電阻的ZnO_(1-x)薄膜分別在Bi_2O_3和Pr_6O_(11)粉末中熱浸,成功制備出高非線性的ZnO基薄膜壓敏電阻,研究了熱浸溫度、時間對其影響。結(jié)果表明:(1)通過控制O_2/Ar、濺射氣壓、濺射功率,成功的制得不同組成的ZnO_(1-x)薄膜。隨著O_2/Ar增大,ZnO_(1-x)薄膜晶粒尺寸減小,薄膜厚度減小,晶格常數(shù)增大。隨著濺射氣壓的增大,ZnO_(1-x)薄膜晶粒尺寸先增大后減小,薄膜厚度先增大后減小,晶格常數(shù)增大。隨著濺射功率的增大,ZnO_(1-x)薄膜晶粒尺寸增大,薄膜厚度增大,晶格常數(shù)增大。當(dāng)O_2/Ar較小、濺射氣壓較小時,薄膜缺陷主要形式為氧空位(VO),主要通過空穴導(dǎo)電,隨著O_2/Ar、濺射氣壓的增大,VO數(shù)目減少,電阻率增大。當(dāng)O_2/Ar較大(大于0.5)、濺射氣壓較大(大于1.0 Pa)、濺射功率在52-212 W時,薄膜缺陷主要形式為間隙鋅(Zni),主要通過電子導(dǎo)電,隨著O_2/Ar、濺射氣壓、濺射功率繼續(xù)增大,Zni數(shù)量增多,電阻率減小。(2)在Bi_2O_3粉末中熱浸射頻磁控濺射法沉積的ZnO_(1-x)薄膜,成功獲得了高性能的ZnO_(1-x)-Bi_2O_3薄膜壓敏電阻器。隨著熱浸溫度的升高,非線性系數(shù)先增大后減小,漏電流先減小后增大,壓敏電壓減小;隨著熱浸時間的延長,非線性系數(shù)和壓敏電壓先增大后減小,漏電流先減小后增大。400℃熱浸40 min獲得的薄膜壓敏電阻器具有最高的非線性系數(shù)(15.1)、最小的漏電流(0.0223 mA/cm2)和較低的壓敏電壓(0.0176 V/nm),這種納米級厚度的器件在低壓的電子/電氣設(shè)備中具有廣泛的應(yīng)用前景。(3)在Pr_6O_(11)粉末中熱浸射頻磁控濺射法沉積的ZnO_(1-x)薄膜,成功獲得了高性能的ZnO-Pr_6O_(11)薄膜壓敏電阻器。隨著熱浸溫度的升高,非線性系數(shù)先增大后減小,漏電流先減小后增大,壓敏電壓降低。700℃熱浸50 min獲得薄膜壓敏電阻器具有最高的非線性系數(shù)(39.29)、最小的漏電流(0.02736 mA/cm2)、較低的壓敏電壓(0.01757 V/nm)和良好的穩(wěn)定性,這種納米級厚度的器件在低壓的電子/電氣設(shè)備中具有廣泛的應(yīng)用前景。
[Abstract]:With the rapid development of electronic technology, electronic devices continue to be miniaturized, low-voltage development, but the traditional ceramic preparation method is difficult to miniaturize, low-voltage development, the development of thin film varistor is imperative. At present, the nonlinearity of thin film varistor is usually poor. In order to solve this problem, the RF magnetron sputtering method is used in this paper. The types and levels of defects in anoxic zinc oxide ZnO _ (1-x)) thin films were modulated. The effects of the defects on the composition, structure and electrical properties of the thin films were explored, and the conductive mechanism was revealed. The high nonlinear ZnO thin film varistor was successfully prepared by hot soaking the low resistor ZnOX thin films in Bi_2O_3 and pr\\\ -\\ {6\}\ {6\} O\ +\ +\ {11\}\%\%\%\%\%\%\%\%\%? The effect of hot dip temperature and time on it is studied. The results show that the control of O _ (2 / A), sputtering pressure and sputtering power is achieved by controlling O _ (2 / A) ~ (-1). ZnO _ s _ (1-x) thin films with different composition have been successfully prepared. With the increase of O _ (2 / ar), the grain size and thickness of ZnO _ s _ (1-x) thin films decrease. With the increase of sputtering pressure, the grain size of ZnO _ (1-x) thin films first increases and then decreases, the film thickness first increases and then decreases, and the lattice constants increase with the increase of sputtering power. The crystal size, thickness and lattice constant of ZnO _ s _ (1-x) thin films increase. When O _ (2 / ar) is small and sputtering pressure is small, the main form of defect is oxygen vacancy (VOO). With the increase of sputtering pressure, the number of VO decreases and the resistivity increases with the increase of O _ S _ 2 / Ar. when the O _ s _ (2) / A _ (r) is larger (> 0.5). When the sputtering pressure is larger than 1.0 Pa, and the sputtering power is 52-212 W, the defects of the films are mainly in the form of gap zinc znion, which is mainly electrically conductive, with O _ 2 / ar. At sputtering pressure, the sputtering power continues to increase, and the resistivity decreases. 2) the ZnOS-1-x) thin films deposited by RF magnetron sputtering in Bi_2O_3 powders. A high performance ZnO_(1-x)-Bi_2O_3 thin film varistor has been successfully obtained. With the increase of hot dip temperature, the nonlinear coefficient first increases and then decreases, and the leakage current decreases first and then increases. Voltage sensitivity decreases; With the increase of hot dip time, the nonlinear coefficient and varistor voltage increase first and then decrease. The thin-film varistor obtained by hot-dip 40 min at .400 鈩，

本文編號：1473407