【摘要】：各種射頻、慣性、機(jī)械諧振器等MEMS器件通常在高真空環(huán)境下才能保證優(yōu)良的性能和較高的品質(zhì)因數(shù)，因而需要進(jìn)行真空封裝。本文提出采用真空電阻熔焊來(lái)實(shí)現(xiàn)MEMS器件真空封裝的新方法。通過(guò)理論、數(shù)值模擬、實(shí)驗(yàn)等方法系統(tǒng)地研究了MEMS器件真空電阻封裝過(guò)程中的關(guān)鍵技術(shù)問(wèn)題，制定MEMS器件的真空電阻熔焊封裝的工藝標(biāo)準(zhǔn)。其主要研究?jī)?nèi)容和創(chuàng)新如下： 通過(guò)大量封裝試驗(yàn)和對(duì)真空封裝技術(shù)分析的基礎(chǔ)上，摸索出真空電阻熔焊影響真空的關(guān)鍵因素。根據(jù)真空環(huán)境進(jìn)行焊接的新特點(diǎn)，研制了具有自主知識(shí)產(chǎn)權(quán)的真空電阻熔焊設(shè)備；該設(shè)備將手套箱體、真空烘箱、抽真空系統(tǒng)、焊接機(jī)構(gòu)融為一體，實(shí)現(xiàn)了電阻熔焊技術(shù)與真空封裝工藝的有機(jī)結(jié)合，保證了真空封裝的質(zhì)量。 真空封裝過(guò)程中需監(jiān)測(cè)MEMS器件的真空度。本文采用石英晶振的諧振電阻隨環(huán)境真空度變化而變化的原理實(shí)現(xiàn)了MEMS器件小體積內(nèi)的真空度測(cè)量，并深入研究了各種影響真空度測(cè)量的因素。 對(duì)真空電阻凸焊過(guò)程進(jìn)行熱-電-結(jié)構(gòu)三場(chǎng)耦合有限元模擬。對(duì)電阻凸焊預(yù)壓階段的接觸過(guò)程進(jìn)行數(shù)值模擬，研究了其中凸焊筋位移場(chǎng)、應(yīng)力場(chǎng)、溫度場(chǎng)、電流場(chǎng)的分布規(guī)律。 為實(shí)現(xiàn)真空度在10Pa以下的MEMS器件真空封裝，創(chuàng)造性地提出了帶緩沖腔的真空殼體來(lái)保證真空腔體泄漏率，設(shè)計(jì)出了MEMS器件真空封裝專(zhuān)用外殼。為提高真空封裝的成品率，分析了金屬鍍層對(duì)封裝質(zhì)量的影響，進(jìn)行了真空封裝外殼焊接后的焊接強(qiáng)度、真空度保持實(shí)驗(yàn)，保證了真空封裝工藝的可靠性。提出了一套基于真空電阻熔焊的MEMS器件真空封裝工藝。 應(yīng)用真空物理的相關(guān)理論，，建立了MEMS器件真空電阻熔焊封裝模型，分析引起封裝腔體的真空度降低的主要原因。通過(guò)真空封裝專(zhuān)用外殼封裝泄漏率的理論計(jì)算，對(duì)真空封裝MEMS器件進(jìn)行真空壽命計(jì)算。試驗(yàn)結(jié)果顯示自行設(shè)計(jì)的真空封裝殼體可以滿足長(zhǎng)時(shí)間真空度保持的要求，證明了真空電阻熔封裝工藝的可靠性。
[Abstract]:All kinds of MEMS devices such as RF, inertia, mechanical resonator and so on can guarantee excellent performance and high quality factor in high vacuum environment, so vacuum packaging is needed. A new method of vacuum packaging for MEMS devices by vacuum resistance welding is proposed in this paper. By means of theory, numerical simulation and experiment, the key technical problems in vacuum resistance packaging of MEMS devices are systematically studied, and the process standard of vacuum resistance welding packaging for MEMS devices is established. The main research contents and innovations are as follows: based on a large number of packaging tests and analysis of vacuum packaging technology, the key factors of vacuum resistance welding affecting vacuum are found out. According to the new characteristics of welding in vacuum environment, a vacuum resistance welding equipment with independent intellectual property rights has been developed, which integrates the glove box, vacuum oven, vacuum pumping system and welding mechanism. The integration of resistance welding technology and vacuum packaging technology is realized, and the quality of vacuum package is guaranteed. Vacuum degree of MEMS devices should be monitored during vacuum packaging. In this paper, the principle that the resonant resistance of quartz crystal oscillator changes with the variation of ambient vacuum degree is used to realize the measurement of vacuum degree in small volume of MEMS device, and various factors affecting the measurement of vacuum degree are studied in depth. The thermoelectric-structure three-field coupling finite element simulation was carried out for the vacuum resistance convex welding process. The contact process of resistance convex welding in preloading stage is numerically simulated. The distribution of displacement field, stress field, temperature field and current field of convex welding bar are studied. In order to realize vacuum packaging of MEMS devices with vacuum degree below 10Pa, the vacuum shell with buffer cavity is creatively proposed to guarantee the leakage rate of vacuum cavity, and a special shell for vacuum packaging of MEMS devices is designed. In order to improve the finished product rate of vacuum packaging, the influence of metal coating on the quality of vacuum packaging was analyzed. The welding strength and vacuum retention experiment of vacuum packaging shell after welding were carried out to ensure the reliability of vacuum packaging process. A vacuum packaging process for MEMS devices based on vacuum resistance welding is proposed. Based on the theory of vacuum physics, the vacuum resistance welding packaging model of MEMS devices is established, and the main reasons for the vacuum reduction of the cavity are analyzed. The vacuum lifetime of vacuum packaging MEMS devices is calculated by theoretical calculation of the leakage rate of vacuum packaging. The experimental results show that the vacuum packaging shell designed by ourselves can meet the requirement of vacuum preservation for a long time, and the reliability of vacuum resistance melt packaging technology is proved.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2013
【分類(lèi)號(hào)】：TG456

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 張麗華,李軍,邵崇儉;MEMS封裝中真空封口及真空度檢測(cè)技術(shù)[J];微納電子技術(shù);2003年Z1期

2 劉光輝,亢春梅;MEMS技術(shù)的現(xiàn)狀和發(fā)展趨勢(shì)[J];傳感器技術(shù);2001年01期

3 程迎軍,朱銳,許薇,羅樂(lè);MEMS器件真空封裝模型模擬[J];傳感器技術(shù);2004年12期

4 鐘先信,李建蜀,肖沙里,徐濤,朱維安,繆秀娥;微系統(tǒng)集成技術(shù)研究的動(dòng)向[J];光學(xué)精密工程;1998年04期

5 朱文峰,林忠欽,來(lái)新民,羅愛(ài)輝;基于多場(chǎng)耦合的車(chē)門(mén)鉸鏈凸焊過(guò)程有限元仿真[J];焊接學(xué)報(bào);2005年01期

6 羅愛(ài)輝,陳關(guān)龍,來(lái)新民,朱文峰;轎車(chē)車(chē)門(mén)鉸鏈的焊接變形 II.凸焊焊后殘余應(yīng)力及變形分析[J];焊接學(xué)報(bào);2005年05期

7 王亞珍,朱文堅(jiān);微機(jī)電系統(tǒng)(MEMS)技術(shù)及發(fā)展趨勢(shì)[J];機(jī)械設(shè)計(jì)與研究;2004年01期

8 施芹;丁榮崢;蘇巖;裘安萍;;硅微陀螺儀器件級(jí)真空封裝[J];機(jī)械工程學(xué)報(bào);2009年02期

9 鄧昭,饒文琦,任天輝,余來(lái)貴,劉維民,余新良;微機(jī)電系統(tǒng)的微觀摩擦學(xué)研究進(jìn)展[J];摩擦學(xué)學(xué)報(bào);2001年06期

10 顧伯勤;氦質(zhì)譜檢漏法應(yīng)用研究[J];南京化工大學(xué)學(xué)報(bào)(自然科學(xué)版);2000年01期

本文編號(hào)：2242720