SiNxOy film, tunable photoluminescence, defect state
本文關(guān)鍵詞:南京大學(xué)固體微結(jié)構(gòu)物理國家重點實驗室開放課題基金,由筆耕文化傳播整理發(fā)布。
非晶氮氧化硅薄膜中新發(fā)光缺陷態(tài)的研究
Investigation on New Luminescent Defect State in Amorphous Silicon Oxynitride Films
[1] [2] [3] [4] [5] [6] [7] [8]
DONG Hengping, CHEN Kunji, LI Wei, SUN Zhengfeng, HUANG Min, DUAN Huan, CAO Yan , WANG Youfeng(1 Taizhou Institute of Science and Technology, Nanjing University of Science
[1]南京理工大學(xué)泰州科技學(xué)院,泰州225300; [2]南京大學(xué)固體微結(jié)構(gòu)物理國家重點實驗室,南京210093
文章摘要:利用等離子體增強化學(xué)氣相淀積(PECVD)方法在室溫下制備出非晶氮氧化硅(a-SiNxOy)薄膜。通過調(diào)節(jié)薄膜中的Si/N比例,可使其光致發(fā)光峰位在450-600nm的較寬波長范圍內(nèi)連續(xù)可調(diào)。對比a-SiNx薄膜和aSiNxOy薄膜的發(fā)光特性,發(fā)現(xiàn)此薄膜發(fā)光來源于由氧引入的新發(fā)光缺陷態(tài)。由光吸收譜的測量結(jié)果可以推斷出此發(fā)光缺陷態(tài)在光吸收邊之下約0.65eV處的禁帶中。并且,通過傅里葉變換紅外光譜(FTIR)和X射線光電子能譜(XPS)測量,證實了這種新發(fā)光缺陷態(tài)與薄膜中存在的O-Si-N鍵合結(jié)構(gòu)有關(guān)。
Abstr:Amorphous silicon oxynitride (a-SiNxOy) films were prepared at room temperature by plasma enhanced chemical vapor deposition (PECVD) techniques. By controlling the Si/N ratio, photoluminescence (PL) from a-SiNxOy films can be tuned in a wide range from 450 nm to 600 nm continuously. According to the comparative study on luminescent characteristics between a-SiNxOy and a-SiNx films, the origin of light emission from a-SiNxOy film has been found to be from a new luminescent defect state induced by the element of oxygen. From the results of the optical absorbance spectrum, the location of this new luminescent defect state was preliminarily determined to be about 0. 65 eV underneath the absorption edge. Moreover, based on the analysis of Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectrum (XPS), it was inferred that this new luminescent defect state was most likely to be associated with O-Si-N bonding configuration.
文章關(guān)鍵詞:
Keyword::a-SiNxOy film, tunable photoluminescence, defect state
課題項目:江蘇省2013年高等學(xué)校大學(xué)生創(chuàng)新創(chuàng)業(yè)訓(xùn)練計劃項目(201313842010Y);南京大學(xué)固體微結(jié)構(gòu)物理國家重點實驗室開放課題基金(M26023);泰州市科技支撐計劃(工業(yè))項目(TG201204)
作者信息:會員可見
本文關(guān)鍵詞:南京大學(xué)固體微結(jié)構(gòu)物理國家重點實驗室開放課題基金,由筆耕文化傳播整理發(fā)布。
,本文編號:132931
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