本文關(guān)鍵詞：氧空位，由筆耕文化傳播整理發(fā)布。

It doesn't make sense if only concerning charge neutrality. And the real site Cr occupy should be taken into consideration. As for the forming mechanism of O vacancy, it depends on your fabrication process. 甯屾湜鏈夋墍甯姪

兩個Cr(+3)替換了兩個Ti(+4),然后為了滿足電荷守恒，一個氧原子脫離晶格留下2個電子，，這樣就達到了電荷守恒，具體的查一下SrTiO3的晶包結(jié)構(gòu)。

你不摻雜也會有氧空位，高價摻雜其實和引入氧空位沒有直接關(guān)系，有時反倒會抑制氧空位產(chǎn)生，因為價位變高，意味著會失去更多的電子，而在你的材料中，只有氧是得到電子的，所以一定程度上摻雜會讓氧更難失去，如果你想引入氧空位，可以試試在一些還原性的氣體中進行試驗

: Originally posted by learn_living at 2015-08-11 22:57:42
It doesn't make sense if only concerning charge neutrality. And the real site Cr occupy should be taken into consideration. As for the forming mechanism of O vacancy, it depends on your fabrication p ...

: Originally posted by 童錢1990 at 2015-08-13 17:27:46
兩個Cr(+3)替換了兩個Ti(+4),然后為了滿足電荷守恒，一個氧原子脫離晶格留下2個電子，這樣就達到了電荷守恒，具體的查一下SrTiO3的晶包結(jié)構(gòu)。

  本文關(guān)鍵詞：氧空位，由筆耕文化傳播整理發(fā)布。